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研究生:宋岳璞
研究生(外文):Yue-Pu Song
論文名稱:p型氧化鋅薄膜的製備
論文名稱(外文):Fabrication of p-Type Zinc Oxide Thin Film
指導教授:林炯暐
指導教授(外文):Chiung-Wei Lin
口試委員:林炯暐
口試委員(外文):Chiung-Wei Lin
口試日期:2013-07-24
學位類別:碩士
校院名稱:大同大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2013
畢業學年度:101
語文別:英文
論文頁數:56
中文關鍵詞:磁控濺鍍氧化p型氧化鋅
外文關鍵詞:Magnetic SputteringOxidationp-type Zinc Oxide
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隨著透明電子的持續火熱,勢必需要對透明的氧化鋅(ZnO)材料做開發,進而應用在CMOS元件上。因此須製做p型ZnO來做搭配,而本論文利用Zn3N2薄膜為前驅物,在快速且低溫製程下,成功的製做出p型ZnO薄膜,並且還擁有低阻值、高載子濃度、高載子遷移率等特性。也因為低溫製程,因此可將薄膜應用在低溫基板上,並大幅的降低製做成本。接著更進一步將薄膜應用在元件上,製做成同質接面的二極體,透過IV特性量測,並與矽質二極體比較後發現,有較快的TurnOn特性,較低的串聯電阻,以及較大的Vth特性,因此也呼應了本實驗製做出的ZnO,擁有低阻值、高載子濃度、高載子遷移率以及寬能隙等特性。
The development of transparent ZnO and implementation in CMOS devices is imminent with the continual growth of transparent electronics, where p-type ZnO is required. In the study described in this paper, p-type ZnO thin film is successfully fabricated by using thin film Zn3N2 as the precursor in a rapid and low temperature process, featured with low resistivity, high carrier concentration, and high carrier mobility. Thanks to the low temperature process, such thin film can be implemented on low temperature substrates and the fabrication cost can be reduced significantly. In addition, such thin film can be implemented to fabricate junction devices with homogeneous interface. It is found that, compared with the IV characteristics of silicon-based diode, the IV characteristics acquired on the thin film shows faster TurnOn properties, lower series resistance, and higher Vth. Such findings are corroborated by the benefits of low resistivity, high carrier concentration, high carrier mobility, and wide band gap found in the ZnO fabricated in this study.
Acknowledgement I
Chinese Abstract II
English Abstract III
Content IV
Figure Captions VI
Chapter 1 Introduction 1
1.1 Introduction 1
1.1.1 ZnO 1
1.1.2 Zn3N2 2
1.2 Motivation 2
1.3 Structure of the Thesis 6
Chapter 2 Basic Theory 7
2.1 Choose Nitrogen as Dopant and Theory of Nitrogen Doping7
2.2 Fabrication of p-type ZnO with Precursor 7
2.3 Applications of p-type ZnO thin film 8
2.3.1 Principles of pn junction 8
2.3.2 Forward and Reverse Bias 9
Chapter 3 Experiment 11
3.1 Introduction of Instruments 11
3.1.1 Reactive DC Magnetron Sputtering System 11
3.1.2 Pulse Mode Rapid Thermal Annealing,RTA 11
3.1.3 Field Emission Scanning Electron Microscope,FE-SEM 12
3.1.4 Energy Dispersive X-ray Spectrometer,EDX 12
3.1.5 Raman spectroscopy 13
3.1.6 Photoluminescence,PL 14
3.1.7 X-ray Diffractometer,XRD 14
3.2 Process of p-type ZnO fabrication 16
3.2.1 Steps of Zn3N4 thin film fabrication 16
3.2.2 Fabrication of p-type ZnO through oxidation by RTA 17
3.2.3 Fabrication of ZnO based homojunction 17
3.3 Structure of Experiment 18
Chapter 4 Results and Discussion 19
4.1 Part 1: Fabrication of p-type ZnO thin film by annealing Zn3N2 thin film 19
4.1.1 Hall Effect Measurement 19
4.1.2 EDX Analysis 20
4.1.3 Observation and Measurement of Aging 20
4.1.4 XRD Analysis 21
4.1.5 PL Spectral Analysis 22
4.1.6 Raman Spectral Analysis 22
4.2 Part 2: Analysis of pn device fabricated from p-type ZnO thin film 23
Chapter 5 Conclusion 26
References 27
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