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研究生:莊泉龍
研究生(外文):Chuan-Lung Chuang
論文名稱:利用奈米粒子製備銅銦鎵硒吸收層應用於太陽能電池之研究
論文名稱(外文):Study of fabrication of copper-indium-gallium-diselenide absorber layer by using nanoparticles for solar cell applications
指導教授:劉宗平劉宗平引用關係
指導教授(外文):Chung-Ping Liu
口試委員:丁 鯤蒲念文藍文厚薄慧雲林瑤冷
口試委員(外文):Kuen TingNen-Wen PuWen How LanHui-Yun BorYua-Learn Lin
口試日期:2013-01-06
學位類別:博士
校院名稱:元智大學
系所名稱:光電工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:101
語文別:中文
論文頁數:64
中文關鍵詞:銅銦鎵硒球磨燒結奈米粒子油墨有機聚合物
外文關鍵詞:Copper-indium-gallium-diselenideBall millingSinteringNanoparticle-inkOrganic polymer
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銅銦鎵硒(Cu(In1-x,Gax)Se2)薄膜的製備,使用奈米粒子油墨和燒結技術。前驅體使用四元化合物,成份比例為Cu/(In+Ga)=0.95、Ga/(In+Ga)=0.39及Se/(Cu+In+Ga)=0.75。奈米粒子的製備,使用滾筒式球磨技術。研磨後的Cu(In1-x,Gax)Se2奈米粒子的平均粒徑小於100nm。奈米粒子油墨的製備,使用研磨後的Cu(In1-x,Gax)Se2奈米粒子加溶劑及有機聚合物等混合而成。在非真空環境下燒結及硒化Cu(In1-x,Gax)Se2前驅體樣品,可以讓薄膜形成晶體結構、形態、計量及光伏等特性。分析結果表明,Cu(In1-x,Gax)Se2吸收層的製備,以奈米粒子墨水聚合物,經過燒結,得到具有黃銅礦結構和有利的成分。在這Cu(In1-x,Gax)Se2吸收層完成樣品,得到Cu:In:Ga:Se莫耳比例為=0.95:0.69:0.38:1.99,而Ga/(In+Ga)相關比例為0.35及Cu/(In+Ga) 相關比例為0.89。在標準的AM 1.5全照度下,太陽能電池的性能分析表明所獲得的轉換效率為2.392%。
Copper-indium-gallium-diselenide (Cu(In1-x,Gax)Se2) thin films were fabricated using precursor nanoparticle-ink and sintering technology. The precursor uses quaternary compound composition ratios of Cu/(In+Ga)=0.95, Ga/(In+Ga)=0.39, and Se/(Cu+In+Ga)=0.75, respectively. The nanoparticles were fabricated by a rotary ball milling technique. After milling, the agglomerated CIGS powder revealed an average grain size smaller than 100 nm. The nanoparticle-ink was fabricated by mixture of Cu(In1-x,Gax)Se2 nanoparticles, solution, and organic polymer. Crystallographic, morphological, stoichiometric, and photovoltaic properties of films were obtained by sintering the precursor Cu(In1-x,Gax)Se2 sample in a non-vacuum environment with selenization. Analytical results indicate that the Cu(In1-x,Gax)Se2 absorption layer prepared with a through sintering has a chalcopyrite structure and favorable compositions. In this sample, the mole ratio of Cu:In:Ga:Se is equal to 0.95:0.69:0.38:1.99, and related ratios of Ga/(In+Ga) and Cu/(In+Ga) are 0.35 and 0.89, respectively. Analysis of a performance of the obtained solar cell under standard air mass 1.5 global illumination revealed a conversion efficiency of 2.392%.
目 錄
書名頁………………………………………………………………………i
論文口試委員審定………………………………….……………………..ii
論文授權書………………………………………………………………..iii
中文摘要………………………………………………………………….vii
英文摘要…………………………………………………………………viii
誌謝………………………………………………………………………..ix
目錄………………………………………………………………………..xi
表錄………………………………………………………………………xvi
圖錄………………………………………………………...……………xvii
符號列表…………………………………………………………...…….xix
第一章、緒論……………………………………………………………1
1.1 前言 …………………………………………………………1
1.2 Cu(In1-x,Gax)Se2薄膜太陽能電池之介紹 2
1.2.1 Cu(In1-x,Gax)Se2薄膜太陽能電池結構 2
1.2.2 Cu(In1-x,Gax)Se2薄膜太陽能電池發展 3
1.3 Cu(In1-x,Gax)Se2相關文獻回顧 ..4
1.4 研究動機及目的 ……………………………………………7
第二章、理論背景………………………………………………………9
2.1 太陽能電池工作原理 ………………………………………...9
2.2 太陽能電池的參數介紹 ……………………………………...10
2.3 生長機制……………………………………………………...11
2.4 本質缺陷……………………………………………………...12
2.5 邊界復合理論………………………………………………...14
2.6 薄膜的成長機制……………………………………………...14
2.6.1 Mo薄膜的成長機制…………………...……………..15
2.6.2 i-ZnO薄膜的成長機制……………...………………..16
2.6.3 Al:ZnO薄膜的成長機制……………………………..16
2.7 前驅薄膜製作原理…………………………………………..17
2.7.1 奈米粉末研磨原理………….………………………..17
2.7.2 奈米油墨製作原理……………………….…………..18
2.7.3 奈米粒子燒結原理…………………….……………..19
2.8 化學水浴沉積法……………………………………………..20
2.8.1 化學水浴沉積法的介紹……………….……………..20
2.8.2 CdS薄膜的成長機制………………….……………..21
2.9 結構性質檢測技術…………………………………………..22
2.9.1 X-ray繞射之理論……………………...……………..22
2.9.2 SEM 微結構之理論………………...………………..22
2.9.3 EDS 成份分析之理論…………...……………….…..23
2.10 光電性質檢測技術 …………………………………………...23
2.10.1 霍爾量測之理論 ……………………………………..24
2.10.2 半導體材料的光吸收 ………………………………..25
第三章、實驗方法與分析…………………………………………..…..25
3.1 實驗方法之流程…….. ………..………..…………..25
3.2 基板清洗 ...25
3.3 Mo電極的製作 26
3.4 Cu(In1-x,Gax)Se2吸收層薄膜的製作 27
3.4.1 前驅體油墨製作 27
3.4.1.1原料的使用 28
3.4.1.2奈米粒子製作 28
3.4.1.3油墨製作 29
3.4.2 前驅體薄膜製作 30
3.4.3 前驅體薄膜的燒結 ………. ……….….….30
3.4.4 Cu2Se二次相去除…………………………..………..31
3.5 CdS緩衝層薄膜的製作……………………………………..32
3.5.1原料的使用……………………………………………..32
3.5.2 CdS膜層製作之流程…………………………………..32
3.6 i-ZnO視窗層之製作…………………………….…………..33
3.7 Al:ZnO導電薄膜層之製作………………….……………...34
3.8 太陽能電池元件量測………………………………………..35
第四章、實驗結果與討論……………………………….……………..37
4.1 Mo電極層分析 ...37
4.1.1 Mo薄膜之XRD分析 37
4.1.2 Mo薄膜之SEM分析 37
4.1.3 Mo薄膜之電性分析 38
4.2 Cu(In1-x,Gax)Se2吸收層分析 38
4.2.1 Cu(In1-x,Gax)Se2薄膜XRD分析 38
4.2.2 Cu(In1-x,Gax)Se2薄膜SEM分析 39
4.2.3 Cu(In1-x,Gax)Se2薄膜EDS分析 41
4.2.4 Cu(In1-x,Gax)Se2薄膜電性分析 42
4.3 CdS緩衝層分析 43
4.3.1 CdS薄膜之XRD分析 43
4.3.2 CdS薄膜之SEM分析 44
4.4 i-ZnO窗口層分析 44
4.4.1 i-ZnO薄膜之SEM分析 45
4.4.2 i-ZnO薄膜之電性分析 45
4.4.3 i-ZnO薄膜之透射分析 46
4.5 Al:ZnO透明電極分析 47
4.5.1 Al:ZnO薄膜之SEM分析 47
4.5.2 Al:ZnO薄膜之電性分析 47
4.5.3 Al:ZnO薄膜之透射分析 48
4.6 太陽能電池元件之整合 49
4.6.1 元件之SEM分析 49
4.6.2 元件之電性分析 50
第五章、結論…………………………………………………………..52
參考文獻………………………………………………………………..54
著作列表………………………………………………………....……..64
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