臺灣博碩士論文加值系統

行動聯網裝置的普及導致網路資料量不斷攀升，數據頻寬日益緊縮，故在基地臺布建需求與日俱增，電路設計前端發射機將應用在LTE小細胞基地臺，利用TSMC 0.18μm 1P6M CMOS製程設計低電壓高線性度升頻混頻器，以及省電高線性度陣列組合式功率放大器。
升頻混頻器是建構在Gilbert-cell mixer去做改良，使用Derivative Superposition(DS)的方法抵銷三階失真，改善線性度，同時利用folded-mixer的架構來降低供應電壓；而功率放大器是使用陣列電路的方式來研製watt-level CMOS全積體化射頻功率放大器，利用功率合成變壓器(Power combining transformer)彙整輸出高頻RF訊號，放大器基本單元操作在Class-AB來達到高效率、高線性度，利用差動架構可互補AB類放大器訊號被截掉的部分，有提高電路線性度的功用。
未來變壓器將使用3D-MEMS微機電製程，提升變壓器的Q值讓輸出功率和PAE得到進一步的改善。

The widespread use of mobile Internet devices has led to daily increases in the quantity of network data and reduced data bandwidth, circuit design proposed in this thesis will be applied to LTE small-cell base stations, using the 0.18 μm 1P6M standard CMOS process to design low voltage high linearity Up-conversion mixer and power saving high linearity array combining power amplifier.
The Up-conversion mixer was to fabricate based on the Gilbert cell mixer, adopted the derivative superposition (DS) method to compensate for third-order distortion and increase linearity, while using a folded mixer to achieve low voltages. And power amplifier using array combining transformer to make up a watt-level fully-integrated radio frequency power amplifier, adopted Parallel Combining Transformer (PCT) to combine total power from basic power amplifier, basic power amplifier are biased at Class-AB condition for good efficiency and linearity, the differential amplifier also can increase linearity.
The transformer will be fabricated on 3D-MEMS process in the future, to increase the Q-factor of transformer, improve the output power and power added efficiency (PAE).

第一章 緒論 - 1 -
1.1 研究背景 - 1 -
1.2 研究發展與動機 - 3 -
1.3 章節概述 - 6 -
第二章 微波功率放大器之設計概論 - 7 -
2.1 簡介 - 7 -
2.2 功率放大器的種類 - 7 -
2.2.1 線性放大器 - 8 -
2.2.2 非線性放大器 - 13 -
2.3 功率放大器之規格參數 - 13 -
2.4 功率放大器之設計原理 - 19 -
2.4.1 Cripps理論[17] - 20 -
2.4.2 負載拉移(Load-pull)[18] - 23 -
2.4.3 穩定性分析[19] - 24 -
第三章 應用於LTE小細胞基地臺省電高線性度陣列組合式功率放大器 - 28 -
3.1 簡介 - 28 -
3.2 高頻晶片變壓器介紹[30] - 30 -
3.3 電路架構設計 - 34 -
3.3.1 單元功率放大器設計: - 35 -
3.3.2 功率合成變壓器設計 - 36 -
3.4 模擬結果 - 39 -
3.5 結論 - 47 -
第四章 混頻器之設計概論 - 48 -
4.1 混頻器介紹 - 48 -
4.2 混頻器種類 - 49 -
4.2.1 被動混頻器(Passive Mixer) - 49 -
4.2.2 主動混頻器(Active Mixer) - 50 -
4.3 混頻器之規格參數 - 54 -
第五章 應用於LTE頻段低電壓高線性度升頻混頻器之設計 - 62 -
5.1 簡介 - 62 -
5.2 電路設計與分析 - 63 -
5.2.1 Derivative Superposition(DS)方法 - 64 -
5.2.2 Folded-mixer的架構 - 67 -
5.3 模擬與量測結果 - 67 -
5.4 結論 - 74 -
第六章 結論 - 75 -
VITA - 77 -
參考文獻 - 78 -

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