本研究是藉由氧電漿在化學氣相沉積法成長的石墨烯表面進行官能化改質，使疏水性的石墨烯表面呈現親水性，隨後透過化學浴沉積法在氧電漿處理石墨烯 (Oxygen plasma treated graphene, OPTG) 的表面成長硫化銻 (Sb2S3) 半導體薄膜，藉此增強石墨烯的光響應，並探討不同的成長時間對石墨烯光響應之影響。研究結果發現，硫化銻成長在 OPTG 表面 (Sb2S3/OPTG) 其吸光波段約為 280~500 nm。實驗結果顯示，經 365 nm 紫外光 (UV) 照光後，在成長 6 小時的 Sb2S3/graphene 複合材料元件有明顯的光反應，其光電流增加 98%，在可見光 420 nm 之光反應可達 350 A/W。證明硫化銻確實可改善石墨烯的光吸收能力，增強石墨烯之光響應。

In this study, the graphene was grown on Cu foil by chemical vapour deposition (CVD) method and functionalized surface modified with oxygen plasma treatment. Graphene was transformed form hydrophobic into hydrophilic by oxygen plasma treatment. We deposited antimony sulfide (Sb2S3) thin films with different growth time on oxygen plasma treatment graphene (OPTG) surface by Chemical bath deposition (CBD) method, and to explore the effects of for photo response of the graphene. The experimental results showed that device of Sb2S3 thin films growth on oxygen plasma treatment graphene (Sb2S3/OPTG) could absorb 280~500 nm wavelength, and observe the obvious current changs under 365 nm UV light irradiation, and the photocurrent enhancement of 95%, the device photo response ~350 A/W at 420 nm Visible light . The study results showed the Sb2S3 can improve the light absorption and enhanced optical response of graphene.

摘要 I
Abstract II
誌謝 III
目錄 IV
圖目錄 VIII
第一章 緒論 1
1-1石墨烯簡介 1
1-2石墨烯結構特性 2
1-3 石墨烯的製備方法 3
1-3-1 機械剝離法 3
1-3-2 氧化石墨烯還原法 3
1-3-3 電化學剝離法 4
1-3-4 化學氣相沉積法 4
1-4 研究動機與目的 5
第二章 文獻回顧及理論 7
2-1 石墨烯光偵測器文獻回顧 7
2-1-1 半導體 7
2-1-2 量子點 8
2-2 電漿簡介與原理 10
2-3 氧電漿對石墨烯結構改質原理 12
2-4 氧電漿對石墨烯結構改質 13
2-4-1 石墨烯表面氧官能化 14
2-4-2 改善金屬/石墨烯接面附著力 15
2-4-3 打開石墨烯能隙 15
2-5 化學浴沉積法 17
2-6 硫化銻 18
2-7 光電流 18
2-8 光響應度 19
2-9 響應時間 20
第三章 實驗方法與步驟 21
3-1 實驗藥品 21
3-2 實驗流程 21
3-2-1 CVD 成長石墨烯 22
3-2-2 清洗基板流程 22
3-2-3 石墨烯轉印 24
3-2-4 曝光顯影 25
3-2-5 氧電漿處理單層石墨烯 26
3-2-6 CBD 法在石墨烯表面成長硫化銻薄膜 26
3-3製程設備 28
3-3-1 電漿清洗機 29
3-3-2 熱蒸鍍機 30
3-4量測儀器 31
3-4-1 拉曼光譜儀 31
3-4-2 紫外光-可見光光譜儀 34
3-4-3 電性量測設備 34
第四章 實驗結果與討論 36
4-1 純石墨烯光反應分析 36
4-2 氧電漿改質石墨烯 37
4-3 硫化銻薄膜成長在石墨烯表面之光學特性 39
4-4 Sb2S3/graphene 複合材料元件之光電特性 40
4-4-1 成長時間對 Sb2S3/graphene 複合材料元件光電流變化 44
第五章 結論 47
參考文獻 48

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