臺灣博碩士論文加值系統

指導教授推薦書
口試委員會審定書
致謝…………………………………………………………..iii
中文摘要…………………………………………………………........iv
Abstract………………………………………………………………..v
目錄……………………………………………………………………vi
表目錄………………………………………………………………….xii
圖目錄………………………………………………………………….x
第一章 簡介……………………………………………………………..1
1-1研究背景……………………………………………………………..1
1-1-1記憶體介紹……………………………………………….1
1-2 DRAM介紹……………………………………………………......2
1-2-1 DRAM 製程……………………………………………...3
1-3 可靠度介紹………………………………………………………….4
1-3-1 元件可靠度介紹(Oxide breakdown) ……………………5
1-3-2時間相依介電層崩潰時間(TDDB) ……………………...5
1-3-3載子效應(HCE) ……………………………………….….6
1-3-4負偏壓溫度不穩定效應(NBTI) …………………………6
1-3-5電荷幫浦電流(ICP) ……………………………………….7
1-4研究動機……………………………………………………………..7
1-5論文結構……………………………………………………………..8
第二章 實驗方法………………………………………………………13
2-1簡介…………………………………………………………………13
2-2 實驗設計…………………………………………………………...14
2-2-1實驗一流程……………………………………………...14
2-2-2實驗二流程……………………………………………...15
2-3實驗設備……………………………………………………………15
2-3-1實驗製程設備…………………………………………...15
2-3-2電性量測設備…………………………………………...15
2-4量測方法與原理……………………………………………………16
2-4-1負偏壓溫度不穩定效應(Negative Bias Temperature Instability，NBTI) ………………………………………….…16
2-4-2 基本電性 (ID-VG，Gm) …………………………………18
2-4-3 電荷幫浦電流(Charge Pumping，Icp) …………………18
2-4-3 活化能(Active Energy，Ea) ……………………………19
第三章 探討在不同溫度與不同熱預算分配在金屬層和鈍化層之熱退火修復對PMOS 元件的電性影響…………………………...27
3-1 簡介………………………………………………………………...27
3-2結果與討論…………………………………………………………28
3-2-1元件可靠度(NBTI)與基本特性 (ID-VG，Gm) 分析……29
3-2-2 閘極氧化層特性(Ea，ICP)分析……………………….32
3-3總結…………………………………………………………………33
第四章 探討在不同製程順序與不同熱預算分配在鈍化層之熱退火修
復對PMOS 元件的電性影響………………………………..48
4-1 簡介………………………………………………………………...48
4-2結果與討論…………………………………………………………49
4-2-1元件可靠度(NBTI)與基本特性 (ID-VG，Gm) 分析……49
4-2-2 閘極氧化層特性(Ea，ICP)分析……………………….53
4-3總結…………………………………………………………………55
第五章 結論與未來方向………………………………………………85
參考文獻………………………………………………………………..87

表目錄
表1-1 TDDB測試的四種模式…………………………………………9
表3-1 實驗條件………………………………………………………..35
表3-2 NBTI stress : -3V@125℃，在第3000 sec，VT shift……………35
表4-1 實驗條件，Part I………………………………………………..57
表4-2 實驗條件，Part II………………………………………………57
表4-3 NBTI stress : -3V@125℃，VT shift在3000 sec，Part I………58
表4-4 NBTI stress : -3V@125℃，VT shift在3000 sec，Part II……..58

圖目錄
圖1-1 一個記憶單元(Single cell)由電晶體和電容與字元線和位元線組成。………………………………………………………….10
圖1-2 基本的DRAM 架構圖…………………………………………10
圖1-3 DRAM 結構示意圖…………………………………………….11
圖1-4 熱載子效應示意圖……………………………………………..11
圖1-5 NBTI操作方式………………………………………………….12
圖 2-1製程流程圖……………………………………………………..21
圖 2-2 閘極氧化介電層的鍵結結構與R-D model反應與擴散行為..21
圖2-3 a.垂直式爐管系統………………………………………………22
圖2-3 b.垂直式爐管腔體旁的三個可變溫線圈線……………………22
圖2-4 Agilent-4284……………………………………………………..23
圖2-5 Agilent-81110A………………………………………………….23
圖2-6 Agilent-4156C…………………………………………………...23
圖2-7 Cascade-Micro chamber…………………………………………24
圖2-8 NMOS與PMOS在NBTI的臨界電壓飄移…………………..24
圖2-9電荷幫浦電流量測系統架構圖………………………………..25
圖2-10 Icp 與VG 關係圖………………………………………………25
圖2-11 NBTI與delta Icp與detal Vth趨勢圖………………………..26
圖3-1 Process flow ……………………………………………………..36
圖3-2 NBTI stress : -2.2V@85℃，1到3000 sec，VT shift………….36
圖3-3 NBTI stress : -3V@85℃，1到3000 sec，VT shift………………37
圖3-4 NBTI stress : -3V@125℃，1到3000 sec，VT shift……………37
圖3-5 a. b. 未經過NBTI stress : -3V@125℃，ID-VG，Part I………..38
圖3-6 a. b. 經過NBTI stress : -3V@125℃，ID-VG，Part I……………39
圖3-7 a. b. 未經過與經過NBTI stress : -3V@125℃，Gm值，Part I…40
圖3-8 a. b. 未經過NBTI stress : -3V@125℃，ID-VG，Part II………..41
圖3-9 a. b.經過NBTI stress : -3V@125℃，ID-VG，Part II……………42
圖3-10 a. b.未經過與經過NBTI stress : -3V@125℃，Gm值，Part II.43
圖3-11 Active Energy，POR……………………………………………44
圖3-12 Active Energy，case 2…………………………………………44
圖3-13 Active Energy，case 3…………………………………………45
圖3-14 Active Energy，case 4…………………………………………45
圖3-15 Active Energy，case 5…………………………………………46
圖3-16 經過NBTI stress前後的Icp……………………………………46
圖3-17 經過NBTI stress後的Icp 與Vt shift…………………………47
圖3-18 經過NBTI stress前後Icp的變化量與Vt shift………………47
圖4-1 Process flow……………………………………………………...59
圖4-2 NBTI stress : -3V@125℃，1到3000 sec，VT shift，Part I-1……59
圖4-3 a. b. 未經過NBTI stress : -3V@125℃，ID-VG，Part I-1………61
圖4-4 a. b. 經過NBTI stress : -3V@125℃，ID-VG，Part I-1…………61
圖4-5 a. b.未經過與經過NBTI stress : -3V@125℃，Gm值，Part I-1..62
圖4-6 NBTI stress : -3V@125℃，1到3000 sec，VT shift，Part I-2……63
圖4-7 a. b. 未經過NBTI stress : -3V@125℃，ID-VG，Part I-2………64
圖4-8 a. b. 經過NBTI stress : -3V@125℃，ID-VG，Part I-2…………65
圖4-9 a. b. 未經過與經過NBTI stress : -3V@125℃，Gm值，Part I-2.66
圖4-10 NBTI stress : -3V@125℃，1到3000 sec，VT shift，Part II-1…67
圖4-11未經過NBTI stress : -3V@125℃，ID-VG，Part II-1…………68
圖4-12 經過NBTI stress : -3V@125℃，ID-VG，Part II-1……………69
圖4-13 未經過與經過NBTI stress : -3V@125℃，Gm值，Part II-1…70
圖4-14 NBTI stress : -3V@125℃，1到3000 sec，VT shift，Part II-2…71
圖4-15 未經過NBTI stress : -3V@125℃，ID-VG，Part II-2…………72
圖4-16 經過NBTI stress : -3V@125℃，ID-VG，Part II-2……………73
圖4-17 未經過與經過NBTI stress : -3V@125℃，Gm值，Part II-2…74
圖4-18 Active Energy，POR……………………………………………75
圖4-19 Active Energy，case 2…………………………………………75
圖4-20 Active Energy，case 3…………………………………………76
圖4-21 Active Energy，case 4…………………………………………76
圖4-22 Active Energy，case 5…………………………………………77
圖4-23 Active Energy，POR……………………………………………77
圖4-24 Active Energy，case n2…………………………………………78
圖4-25 Active Energy，case n3…………………………………………78
圖4-26 Active Energy，case n4…………………………………………79
圖4-27 Active Energy，case n5…………………………………………79
圖4-28 經過NBTI stress前後的Icp，Part I…………………………80
圖4-29 經過NBTI stress後的Icp與Vt shift，Part I-1…………………80
圖4-30 經過NBTI stress前後Icp的變化量與Vt shift，Part I-1………81
圖4-31 經過NBTI stress後的Icp與Vt shift，Part I-2…………………81
圖4-32 經過NBTI stress前後Icp的變化量與Vt shift，Part I-2………82
圖4-33 經過NBTI stress前後的Icp，Part II……………………………82
圖4-34 經過NBTI stress後的Icp與Vt shift，Part II-1………………..83
圖4-35 經過NBTI stress前後Icp的變化量與Vt shift，Part II-1……83
圖4-36 經過NBTI stress後的Icp與Vt shift，Part II-2………………84
圖4-37 經過NBTI stress前後Icp的變化量與Vt shift，Part II-2……84

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