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研究生:楊世偉
研究生(外文):YANG SHI-WEI
論文名稱:垂直式GaN LED製程中研磨技術之研究
論文名稱(外文):A Study of vertical GaN LED grinding technology
指導教授:黃振國黃振國引用關係黃勝斌
指導教授(外文):Huang JENN-GWOHUANG SHENG-BIN
口試委員:黃俊達蔡明忠李顯億黃勝斌
口試委員(外文):HUANG JUN-DACAI MING-JHONGLI XIANHUANG SHENG-BIN
口試日期:2014-06-26
學位類別:碩士
校院名稱:建國科技大學
系所名稱:電機工程系暨研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2014
畢業學年度:102
語文別:中文
論文頁數:88
中文關鍵詞:研磨化學機械研磨雷射剝離
外文關鍵詞:GrindingChemical Mechanical PolishingLaser Lift-Off
相關次數:
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本論文主要著重Thin-GaN LED製程中研磨技術部分,目的在探討晶片經過每道研磨製程後,經由雷射剝離技術(Laser lift-off)觀察藍寶石機板剝離後相關變化,並配合電性VF 觀察,如VF 不在2.8V ~3.0V區間內則判斷為不良品,由此配合來找到製程的最佳參數。以提供 LED製程的參考。
晶圓接合(wafer bonding)後的研磨製程需要快速且有平坦的表面來提升雷射剝離的良率。經由實驗得知_粗磨參數:S1轉速1000rpm、S2轉速150rpm及進擠量20μm/min,可有最佳之移除率;平坦化則可由細磨及化學機械研磨(Chemical mechanical polish-CMP)完成,在細磨參數選用鹼性3μm鑽石液、PP轉速75rpm、銅盤轉速80rpm及加工壓55kg,結合CPM中PC-2 0.4kg、研磨盤轉速40rpm及軟拋時間20min後,表面粗糙度以原子力顯微鏡(Atomic Force Microscopy -AFM)觀察可達0.8nm,於Laser Lift-Off解離後,在OM檢視下無殘留因表面刮痕留下的異常。

This paper mainly focuses on Thin-GaN LED manufacturing process grinding technology part, aims to explore the wafer after every polishing process, stripping via Laser lift-off observation sapphire changes, , and with the power of VF observed. If VF is not in 2.8V ~ 3.0V range judged then defective products, which meet to find the optimal parameters of the process. To provide a reference LED manufacturing process.
After grinding wafer bonding processes require fast and have a flat surface to enhance the yield of the laser peel. Through experiments that: a coarse parameter S1 speed 1000rpm, S2 speed of 150rpm and into the crowded amount 20μm/min, may have the best removal rate; planarization can be done by the fine grinding and chemical mechanical polishing, fine grinding parameters are chosen in alkaline 3μm diamond solution, PP speed 75rpm, 80rpm speed and processing copper coil pressure 55kg, combined with CPM in PC-2 0.4kg, platen speed 40rpm and soft toss time 20min, the surface roughness of up to atomic force microscopy 0.8nm, in after Laser Lift-Off dissociation, in view OM leaving no residual anomalies due to surface scratches.

中文摘要………………………………………………………………I
Abstract…………………………………………………………………II
致謝…………………………………………………………………III
目錄…………………………………………………………………IV
表目錄…………………………………………………………………VII
圖目錄…………………………………………………………………VIII
第一章 緒論……………………………………………………………1
1-1固態照明發展歷史簡介………………………………………1
1-2 研究動機………………………………………………………..4
第二章 基本原理…………………………………………………………8
2-1 LED藍寶石基板…………………………………………………8
2-2 LED研磨機制與研磨理論……………………………………..11
2-2-1粗磨(Plane grinding) ……………………………………..11
2-2-2 細磨(Fine grinding) ……………………………………..12
2-2-3研磨之加工參數…………………………………………12
2-2-4 砂輪轉…………………………………………………...12
2-2-5 進給速度………………………………………………13
2-3 Chemical mechanical polish(CMP) 技術概述………………14
2-4 Laser Lift-Off技術概述………………………………………17
第三章 實驗設備與研究流程…………………………………………19
3-1樣品製備……………………………………………………19
3-1-1磊晶機台介紹……………………………………………19
3-1-2 金屬氣相沉積MOCVD磊晶成長原理與應用………21
3-1-3 Thin-GaN LED 基板製作流程………………………….22
3-2實驗流程………………………………………………………...23
3-2-1實驗步驟………………………………………………23
3-2-2實驗參數………………………………………………24
3-2-3 實驗材料………………………………………………24
3-3 研磨機台介紹………………………………………………….25
3-3-1 粗磨……………………………………………………25
3-3-2 細磨……………………………………………………26
3-3-3 化學機械研磨(CMP) …………………………………27
3-4 Laser Lift-Off機台介紹………………………………………29
3-5 量測儀器……………………………………………………….30
3-5-1原子力顯微鏡(Atomic Force Microscopy -AFM) ………31
第四章 實驗結果與討論………………………………………………32
4-1 移除率…………..……………………………………………...32
4-2 機械研磨與Laser Lift-Off之結果與討論……………………45
4-2-1研磨厚度對Lift-Off之影響……………………………45
4-2-2 不同參數研磨後之Sappire表面對Lift-Off之影響……52
4-3 研磨刮傷及表面潔淨度與Laser Lift-Off之結果與討論……69
第五章 結論……………………………………………………………..71
參考文獻…………………………………………………………………73

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