臺灣博碩士論文加值系統

新式記憶體的提出與發展受到關注與研究，其中電阻式記憶體具有低耗能、高操作速度、結構簡單與良好的微縮性的等優點所以備受矚目。可應用於電阻式記憶體絕緣層的材料種類繁多，近年來，有機材料被提出替換傳統的無機材料。有機電阻式記憶可應用於軟型基板上，達到可撓式電子產品的製作，此外，低成本的製程與化學架構的多變性，使得有機材料成為電阻式記憶體的發展重點之一。
本實驗採用由達興公司所提供的聚亞醯胺薄膜，製成Al/DAXIN-PI/TaN結構的電阻式記憶體，其表現出優良的特性，包括相當大的記憶窗(on/off ratio > 108)與相當低的操作能量(ca. 2.7×106Vm-1)。透過控制熱亞醯胺化的溫度，我們發現在高溫的製程下會改變聚亞醯胺薄膜的微結構，提高操作電壓，同時降低高阻態時漏電流。

The proposed novel memories has been attracted attention and investigated for replacing the chief non-volatile memory, floating gate memory. Resistive Random Access Memory (ReRAM) with low power consumption, high operation speed, sample structure, and well scaling is considered as the candidate for the next generation. Various materials is used as the resistive switching layer of ReRAM. In recent years, organic material is proposed to replace traditional inorganic material. The organic-based ReRAM is appropriate for flexible electronic device with low cost fabrication technology and the device characteristics can be modulated with multiple chemical synthesis. Therefore, the organic-based ReRAM is thought to be the one of most importance issue in the ReRAM area.
In this study, a Al/DAXIN-PI/TaN structure ReRAM device was fabricated with the polyimide thin film is provided from the DAXIN company. The DAXIN-PI device shows excellent performance, including wider large memory window (Ron/Roff >108) and low operation energy (ca. 2.7×106Vm-1). Furthermore, we found that the macro-structure of PI thin film is modulated with thermal imidization temperature and operation voltage is increasing and high resistance state (HRS) leakage current is decreasing.

目錄
致謝 I
摘要 III
Abstract IV
目錄 V
圖目錄 VIII
表目錄 XI
第一章 緒論 1
1.1 前言 1
1.2 新穎式記憶體 2
1.2.1 磁阻記憶體(MRAM) 4
1.2.2 相變化記憶體(PCM) 5
1.2.3 鐵電記憶體(FeRAM) 6
1.3 電阻式記憶體 7
1.3.1 電阻式記憶體(ReRAM) 7
1.3.2 電阻轉換現象 9
1.3.3 電阻轉換機制 10
1.4 電流傳導機制 14
1.4.1 歐姆傳導(Ohmic conduction) 14
1.4.2 熱離子激發(Thermionic emission) 14
1.4.3 Fowler-Nordheim tunneling (F-N tunneling) 15
1.4.4 Poole-Frenkel emission 15
1.4.5 空間電荷限制電流(Space charge limit current，SCLC) 16
第二章 有機材料電阻式記憶體 19
2.1 有機材料 19
2.1.1 聚亞醯胺(Polyimide-PI) 19
2.2 電荷轉移(Charge transfer，CT) 23
第三章 聚亞醯胺電阻式記憶體特性探討 25
3.1 研究動機 25
3.2 實驗方法與步驟 25
3.2.1 表面輪廓儀(Alpha-step profilometer) 27
3.3 電壓電流特性探討 27
3.3.1 電壓電流量測 27
3.3.2 起始特性差異 30
3.3.3 電阻轉換機制 33
3.3.4電流傳導機制 34
3.4 電阻率穩定度 38
3.5 資料保存能力 39
第四章 結論 42
參考文獻 43

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