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研究生:許鈞強
研究生(外文):Hsu, Chun-Chiang
論文名稱:製備TiO2-doped ZnO透明導電膜之研究
論文名稱(外文):Growth of TiO2-doped ZnO Transparent Conductive Films by Sputtering
指導教授:陳健志陳健志引用關係
指導教授(外文):Chen, Chien-Chih
口試委員:鄒貴鉅楊慶彬陳健志
口試委員(外文):Zou, Gui-JuYang, Qing-BinChen, Chien-Chih
口試日期:2013-12-19
學位類別:碩士
校院名稱:龍華科技大學
系所名稱:工程技術研究所
學門:工程學門
學類:綜合工程學類
論文種類:學術論文
論文出版年:2014
畢業學年度:102
語文別:中文
論文頁數:46
中文關鍵詞:磁控濺鍍靶材燒結TiO2-doped ZnO退火
外文關鍵詞:Magnetron sputterSinteringTiO2-doped ZnOAnnealing
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本研究使用自行壓製的TiO2-doped ZnO (TZO)靶材,TiO2含量2wt%,ZnO含量98 wt%,利用射頻(RF)濺鍍系統,沉積TZO透明導電膜於蘇打玻璃。TZO (ZnO:98 wt%,TiO2:2 wt%)粉末以12 MPa乾壓成,保壓 5 min。採兩階段升溫燒結,第一階段由室溫加熱到800 °C (升溫速率5 °C/min),第二階段加熱到1200 °C (升溫速率2 °C/min),持溫8小時,成功完成TZO靶材燒結。
使用TZO靶材:固定沉積壓力15 mTorr、基板溫度100 °C、RF power 130 W,改變沉積時間分別為45、50、55、60、65、70分鐘。此外,探討不同基板溫度分別為100 °C、150 °C、200 °C、250 °C、300 °C對TZO薄膜的影響。本研究亦探討Ti緩衝層及真空退火製程對TZO透明導電膜的影響,實驗結果顯示,使用Ti緩衝層再退火,其電阻值由6.81×10-3 Ω-cm下降至4.23×10-3 Ω-cm,能隙值從3.28 eV增加至3.30 eV,且光穿透率大於85%。

Ceramic targets (TiO2-doped zinc oxide, TZO) with a mixture of ZnO powder (99.9% purity) and TiO2 powder (99.9% purity, the TiO2 content is approximately 2 wt%) were employed in our experiment as source materials under a pressure of 12 MPa in ambient atmosphere at room temperature, pressure holding time is 5 min. Using two stage sintered, the first from room temperature to 800 oC (heating rate 5 °C/min), and then sintered to 1200 oC (heating rate 2 °C/min), holding time is 8 hour. The result indicated that it was a successful experiment.

TZO thin films were deposited onto soda-lime glass substrates by means of the radio frequency (RF) magnetron sputtering process, with a TZO ceramic target. The effects of the deposition time (45, 50, 55, 60, 65, 70 min) and substrates temperature (100, 150, 200, 250, 300 °C) on the morphology and optoelectronic performances of TZO films were investigated. Further, the Ti buffer layer and annealing in a vacuum also were studied. The experimental results show that with Ti buffer and annealing treatment, the electrical resistivity of the TZO films was found to have decreased from 6.81×10-3 Ω-cm to 4.23×10-3 Ω-cm, the energy band gap increased from 3.28 eV to 3.30 eV, and the average optical transmittance, in the visible part of the spectrum, was approximately 85%.

摘要 i
ABSTRACT ii
誌謝 iii
目錄 iv
表目錄 vi
圖目錄 vii
第一章 序論 1
1.1 前言 1
1.2 研究動機 2
1.3 研究目的 2
第二章 實驗相關理論 4
2.1 透明導電物 4
2.2 氧化鋅基本性質與應用 4
2.2.1 氧化鋅的晶體結構 4
2.2.2 氧化鋅的電學性質 5
2.2.3 氧化鋅的光學性質 5
2.3 濺鍍原理 5
2.3.1 直流濺射鍍膜系統(DC sputtering) 6
2.3.2 射頻濺射鍍膜系統(RF sputtering) 7
2.3.3 磁控濺鍍系統(Magnetron Sputtering Deposition) 9
2.4 TZO靶材壓製與燒結 9
2.4.1 燒結原理 11
2.5 薄膜沉積理論 12
2.5.1 薄膜成長過程 12
2.5.2 薄膜之微結構 13
第三章 實驗流程與儀器設備 15
3.1薄膜鍍製實驗流程 15
3.1.1 濺鍍設備與操作步驟 16
3.2 鍍層分析及量測 17
3.2.1 X光繞射(X -Ray Diffraction,XRD)分析 17
3.2.2 電性(4-point probe)分析 18
3.3.3 光穿透率分析 18
3.3.4 薄膜表面(SEM)分析 19
第四章 TiO2-doped ZnO 製程及分析 20
4.1靶材壓製與燒結 20
4.1.1 實驗材料 20
4.1.2 實驗設備 20
4.1.3 實驗流程 20
4.2 TZO最佳沉積參數 24
4.2.1 改變沉積時間 24
4.2.2 不同沉積時間的電阻及光學分析 25
4.2.3 改變基材溫度 28
4.2.4 不同基材溫度的電阻值及能隙分析 30
4.3不同退火溫度之影響 32
4.3.1 不同退火溫度的X光繞射(XRD)分析 32
4.3.2 不同退火溫度的電性分析 33
4.3.3 不同退火溫度的光學及能隙分析 34
4.3.4 不同退火溫度的TZO薄膜表面形貌 35
4.3.5 TZO薄膜沉積結果 37
4.4 沉積TiO2-doped ZnO使用Ti緩衝層 38
4.4.1 使用Ti緩衝層之TZO XRD 結構分析 39
4.4.2 使用Ti緩衝層之TZO光學及能隙分析 41
4.4.3 使用Ti緩衝層之TZO薄膜製程結果 43
第五章 結論 44
參考文獻 45

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