臺灣博碩士論文加值系統

矽基板填孔電鍍(plating)製程，為晶片堆疊中，非常重要之製程及環節。因為現行電子產品消費市場外觀需求小而美，且半導體製程能力，越往下走，製程難度愈來愈高的情形下。晶片堆疊技術因應而生。
此電鍍線路主要就是當線路導通使用，目前之高深寬比之填孔電鍍能力、電鍍品質好壞的研究就變得非常重要。電鍍填孔能力好壞，影響到其產品效能，及其後續之信賴性。換言之，就是其產品壽命的長短。完美之電鍍填孔能力，其最終果不能有些缺陷於金層內，如電鍍不完全、氣洞(void)、鍍層過厚(over-burden)。本文是探討電鍍機因子對於電鍍品質缺陷不良之關係。

Plating process of silicon substrate is a very important process and link for die stacking module。Small and beautiful appearance of the consumer market demand for electronic products and Semiconductor processing capability, fine pitch ability more go down， the process more difficult. depend on these requirement. Chip stacking technology bring about。
This plating line is mainly use for conducting line，The current research for high aspect ratio via plating capability and plating defects become more and more important. it will impact product function and reliability。In other words，impact product life-time。Ideal via re-filling ability，the final plating result will without some defects, like as in-complete filling、void、over-burden。This article is explore the relationship between the plating machine factor for poor quality of the plating。

摘要---------------------------------------------------- Ι
英文摘要 ----------------------------------------------- Ⅱ
一、緒論 ----------------------------------- 01
1.1 前言 ------------------------------------------- 01
1.2 研究動機與目的 ---------------------------------- 06
1.2.1 什麼是矽基板盲孔電鍍 --------------------------- 06
1.2.2 為何要使用矽基材盲孔電鍍 ----------------------- 06
二、原理與文獻回顧 ---------------------------------- 10
2.1 電鍍機架構、原理介紹 ----------------------------- 10
2.1.1 影響孔洞電鍍之因子 ------------------------------ 13
2.1.2 機台影響因數 ----------------------------------- 15
2.2 盲孔電鍍之材料前處理製程 -------------------------- 17
2.3 盲孔電鍍材料行為模式簡介 --------------------------18
2.4 盲孔電鍍槽體行為簡介 ----------------------------- 22
三、實驗 -------------------------------------------25
3.1 使用器材列表 ------------------------------------ 25
3.2 材料 -------------------------------------------27
3.2.1 材料前處理相關製程說明 ----------------------------28
3.3 實驗架構 --------------------------------------- 31
3.3.1 晶圓級電鍍機主要流程架構 --------------------------31
3.4 實驗流程 ----------------------------------------33
3.4.1 空片準備 ----------------------------------------34
3.4.2 因子設定 ----------------------------------------35
3.4.3 電鍍成品收集(不同因子差異) ------------------------36
3.4.4 剖面研磨解析(cross-section) ---------------------36
3.4.5 工具顯微鏡確認電鍍成果 ----------------------------37
3.4.6 3D X-RAY再次確認品質 ----------------------------38
3.5 希望電鍍結果需求 ---------------------------------41
四、 結果與討論 --------------------------------------43
4.1 預清洗方式的影響 ---------------------------------43
4.1.1 無清洗對盲孔電鍍銅之影響 ---------------------------43
4.1.2 純水清洗對盲孔電鍍銅之影響 -------------------------45
4.1.3 真空純水清洗對盲孔電鍍銅之影響 ----------------------47
4.2 夾具轉速對於電鍍之影響 -----------------------------49
4.3 電鍍液溫度對於電鍍之影響 ---------------------------51
五、 結論與建議 ---------------------------------------53
參考文獻 -------------------------------------------------58

[1]許明哲，先進微電子 3D-IC構裝，台北：五南圖書出版社，2011。
[2]唐經洲 ，3D IC設計簡介。20090612 成大 CAD，p.10。
[3]台灣電路板協會，Taiwan Printed Circuit Association。
[4]Novellus Fudan University International Interconnect
Symposium data May 28, 2008。
[5]D. Schmauch, B. Kim, and T. Ritzdorf, “3D Packaging
Enabled with Electrochemical Deposition Techniques from
Varied Electronic Industry Segments,” Pan Pacific
Microelectronics Symposium, January 2006。
[6]Dr. A. Uhlig。Atotech@Sematech Workshop San Diego/Ca
pp.6 2008-09-26。
[7]Lutz Hofmann , Ramona Ecke , Stefan E. Schulz ,Thomas
Gessner ,Center for Microtechnologies,“Investigations
regarding Through Silicon Via filling for 3D integration
by Periodic Pulse Reverse plating with and without
additives” Chemnitz University Of Technology, D-09107
Chemnitz, Germany。
b Fraunhofer Research Institution for Electronic Nano
Systems (ENAS), D-09126 Chemnitz, Germany 。
[8]EMC-3D European Technical Symposium Semitool，Inc.，June
25-29 2007。
[9]Rozalia Beica, Charles Sharbono, Tom
Ritzdorf ，“Through Silicon Via Copper
Electrodeposition for 3D Integration”Semitool, Inc.655
West Reserve Drive, Kalispell, MT 59901, USA。
[10]M. Jürgen Wolf, Thomas Dretschkow, Bernhard Wunderle,
Nils Jürgensen, Gunter Engelmann, Oswin
Ehrmann,Albrecht Uhlig, Bernd
Michel, Herbert Reichl ，“High Aspect Ratio TSV
Copper Filling with Different Seed Layers”Fraunhofer
Institute for Reliability and Microintegration (IZM),
Germany。