臺灣博碩士論文加值系統

半導體材料單晶碳化矽(Single-Crystal Silicon Carbide；SiC)，其主要特點為寬能隙元件並具有高飽和電子漂移速度、高擊穿電場強度、高熱導率及低介電常數等等一系列優良特性，使得非常有機會成為下一代高溫及高功率的半導體元件，但由於單晶碳化矽材料的硬脆性及化學惰性，致使它成為一個難以加工的材料。目前，半導體製程中唯一可達到全面平坦化的關鍵技術為化學機械拋光，如何同時獲得高材料移除率及超平滑且無損傷的表面已成為其應用所必須解決的重要課題。
本研究以硬脆材料磨削理論來探討單顆磨粒的磨削機制，希望能藉由單顆磨粒的磨削機制來消除表面及次表層損傷之刮痕，其方法為利用磨削過程中所產生的裂紋深度值來評估機械拋光之移除量，建立完整的機械拋光(粗拋)與化學機械拋光(精拋)標準製程，移除每次加工所留下的損傷層並獲得無表面之損傷。另外亦開發新型鑽石修整器，其鑽石為放射狀排列且每孔具有3~4顆鑽石，並與傳統鑽石修整器進行探討拋光墊表面特性及碳化矽材料移除率、表面形貌之影響。進而提高單晶碳化矽化學機械拋光之材料移除率，分別自製0wt% 、1wt%及5wt%聚氨酯奈米鑽石拋光墊，並在拋光液循環回收製程中進行同時修整及拋光。經由實驗結果表明，新型組合式鑽石修整器比傳統修整器高出約2倍修整率，而碳化矽材料移除率亦高出13%，此外，聚氨酯奈米鑽石拋光墊經由單晶碳化矽拋光測試，相較於聚氨酯拋光墊(Cabot D100)高出1.5倍材料移除率，並獲得良好的表面粗糙度及無次表面損傷。

The application field of single-crystal silicon carbide (SiC) as a next-generation compound semiconductor is expanding because of its significant advantages of high power, high frequency, low coefficient of thermal expansion, and high thermal conductivity. Currently, only can achieve full planarization key technology is chemical mechanical polishing(CMP), very important issue is how to get high material removal rate and ultra-smooth surface.
In this study, we based on theory of brittle materials grinding single grain grinding mechanism, using single grain grinding mechanism to remove surface scratches and subsurface damage, then using grinding generated crack depth value to prediction the amount of mechanical polishing removed, finally construct mechanical polishing (rough polishing) and chemical mechanical polishing (finish polishing) standard process. Furthermore, the use a novel arrangement of diamond disk, which were radially arranged in a cluster arrangement with 3–4 grits per cluster. The surface characteristics of the polishing pads, as well as the surface roughness, surface damage, and removal rate of silicon carbide polished with these pads and diamond disks were investigated and compared with the corresponding attributes shown by a conventional diamond disk. Improve the material removal rate of chemical mechanical polishing for silicon carbide were made 0wt%, 1wt% and 5wt% polyurethane nano diamond polishing pad, at the same time dressing and polishing in the recycling slurry process. Experimental results showed that the novel diamond disk resulted in a dressing rate around two times higher and a removal rate about 13% higher than those obtained using the conventional diamond disk. In addition, SiC polishing tests revealed that the nano diamond polishing pads provided better surface roughness without any damage, as well as about 1.5 times higher removal rate than that provided by the polyurethane polishing pad.

誌謝
摘要
Abstract
目錄 I
圖目錄 III
表目錄 VII
符號索引 VIII
第一章 緒論 1
1.1 前言 1
1.1.1單晶碳化矽(SiC)之特性 2
1.1.2單晶碳化矽基板之優劣性 4
1.2 研究動機與目的 4
1.3 文獻回顧 5
1.3.1碳化矽化學機械拋光的相關研究 5
1.3.2固定磨料之拋光墊的相關研究 8
1.3.3硬脆材料的相關研究 9
1.4 研究流程 10
1.5 本文架構 11
第二章 基本理論 12
2.1 磨料加工基本原理 12
2.1.1游離磨料加工技術 12
2.1.2固定磨料加工技術 13
2.2 化學機械拋光基本原理 15
2.2.1化學機械拋光 15
2.2.2化學機械拋光材料移除方程式 17
2.3 化學機械拋光相關耗材 19
2.3.1鑽石修整器 19
2.3.2拋光墊 20
2.3.3拋光液 21
2.3 硬脆材料磨削理論 21
2.3.1硬脆材料延性磨削機制 21
第三章 實驗規劃 24
3.1 實驗設備 24
3.2 實驗材料 31
3.3 實驗規劃及進行步驟 34
3.3.1機械拋光製程實驗 34
3.3.2化學機械拋光製程實驗 36
3.3.3化學蝕刻實驗 41
第四章 結果與討論 42
4.1 單晶碳化矽拋光製程建立與探討 42
4.1.1硬脆材料磨削理論之單顆磨粒壓痕斷裂機制 42
4.1.2鑽石拋光液及鑽石拋光膜製程對碳化矽材料移除率之影響 44
4.1.3鑽石拋光液及鑽石拋光膜製程對碳化矽表面品質之影響 44
4.2拋光機改裝設計與新式組合式鑽石修整器之開發 48
4.2.1.前言 48
4.2.2拋光機之改裝設計 48
4.2.3新型組合式鑽石修整器與傳統鑽石修整器之製作與特性分析 54
4.2.4鑽石修整器對碳化矽材料移除率之影響 58
4.2.5鑽石修整器對拋光墊及碳化矽表面品質之影響 61
4.3提升單晶碳化矽材料移除率之製程探討 64
4.3.1拋光液供給方式對碳化矽材料移除率之影響 64
4.3.2拋光液供給方式對碳化矽表面品質之影響 65
4.3.3奈米鑽石拋光墊對碳化矽材料移除率之影響 67
4.3.4奈米鑽石拋光墊對碳化矽表面品質之影響 68
4.4化學蝕刻之次表面損傷檢測 74
4.4.1單晶碳化矽之次表面層損傷 74
第五章 結論與未來展望 77
5.1 結論 77
5.2 未來展望 78
參考文獻 79

1. Z. W. Zhong, Z. F. Wang, Y. H. Tan, Chemical Mechanical Polishing of Polymeric Materials for MEMS Applications, Microelectronics Journal, 37, pp.295-301, 2006.
2. 錢韋至，多晶型6H-SiC晶體成長之研究，遠東學報，第二十八卷第二期，2011年。
3. F. W. Huo, D. M. Guo, R. K. Kang, G. Feng, Nanogrinding of SiC Wafers with High Flatness and Low Subsurface Damage, Transaction of Nonferrous Metals Society of China, 22, pp.3027-3033, 2012.
4. X. Shi, G. Pan, Y. Zhou, C. Zou, H. Gong, Extended Study of the Atomic Step-Terrace Structure on Hexagonal SiC(0001) by Chemical Mechanical Planarization, Applied Surface Science, 284, pp.195-206, 2013.
5. 鄭紹章，氮化鋁鎵/氮化鎵高電子移導率電晶體製作於矽基板與藍寶石基板之特性比較與應用電路，國立中央大學，電機工程研究所，碩士論文，2008年。
6. 陳勇臻，SiC單晶拋光片製備及表征，西安里工大學，微電子學與固體電子學系，碩士論文，2008年。
7. Z. Zhu, V. Muratov, E. Fischer, Tribochemical Polishing of Silicon Carbide in Oxidant Solution, Wear, 225-229, pp.848-856, 1999.
8. 中原良彥, 土肥俊郎, SiC単結晶のCMP プロセス改善に関する一検討, 埼玉大学総合研究機構報告, 7, pp.11-13, 2006.
9. H. S. Lee, D. I. Kim, J. H. An, H. J. Lee, K. H. Kim, H. Jeong, Hybrid Polishing Mechanism of Single Crystal SiC using Mixed Abrasive Slurry, CIRP Annals Manufacturing Technology, 59, pp.333-336, 2010.
10. J. Su, J. Du, H. Liu, X. Liu, Research on Material Removal Rate of CMP 6H-SiC Crystal Substrate (0001)Si Surface based on Abrasive Alumina (Al2O3), Procedia Engineering, 24, pp.441-446, 2011.
11. A. Kubota, M. Yoshimura, S. Fukuyama, C. Iwamoto, M. Touge, Planarization of C-face 4H-SiC Substrate using Fe Particles and Hydrogen Peroxide Solution, Precision Engineering, pp.137-140, 2012.
12. H. Aida, T. Doi, H Takeda, H. Katakura, S. W. Kim, K. Koyama, T. Yamazaki, M. Uneda, Ultraprecision CMP for Sapphire, GaN, and SiC for Advanced Optoelectronics Materials, Current Applied Physics, 12, pp.541-546, 2012.
13. T. Okamoto, Y. Sano, H. Hara, K. Arima, K. Yagi, J. Murata, H. Mimura, K. Yamauchi, Damage-Free Planarization of 2-inch 4H-SiC Wafer using Pt Catalyst Plate and HF Solution, Materials Science Forum, 600-603, pp.835-838, 2009.
14. K. Yamamura, T. Takiguchi, M. Ueda, H. Deng, A. N. Hattori, N. Zettsu, Plasma Assisted Polishing of Single Crystal SiC for Obtaining Atomically Flat Strain-Free Surface, CIRP Annals Manufacturing Technology, 60, pp.571-574, 2011.
15. 佐藤 誠, 山口幸男, 砥粒内包工具によるSiC 単結晶の研磨の試み, セラミックス基盤工学研究センター年報, 7, pp.49-53, 2007.
16. M. Y. Tsai, L. Y. Yan, Characteristics of Chemical Mechanical Polishing using Graphite Impregnated Pad, International Journal of Machine Tools &; Manufacture, 50, pp.1031–1037, 2010.
17. M. Y. Tsai, C. Y. Chen, Y. R. He, Polishing Characteristics of Hydrophilic Pad in Chemical Mechanical Polishing Process, Materials and Manufacturing Processes, 27, pp.650–657, 2012.
18. P. Velden, Chemical Mechanical Polishing with Fixed Abrasives using Different Sub Pads to Optimize Wafer Uniformity, Microelectronic Engineering 50, pp.41–46, 2000.
19. Y. Li, Y. Wu, L. Zhou, M. Fujimoto, Vibration-Assisted Dry Polishing of Fused Silica using a Fixed-Abrasive Polisher, International Journal of Machine Tools &; Manufacture, 2013.
20. T. Enomoto, U. Satake, T. Fujita, T. Sugihara, Spiral-Structured Fixed-Abrasive Pads for Glass Finishing, CIRP Annals Manufacturing Technology, 62, pp.311-314, 2013.
21. K. E. Puttick, M. R. Rudman, K. J. Smith, A. Franks, K. Lindsey, Single-Point Diamond Machining of Glasses, Proceedings of the Royal Society of London, A426, pp.19-30, 1989.
22. 許庭源，探討硬脆性材料之延性切削加工機制，國立中正大學，機械工程系，碩士論文，2009年。
23. 蔡志成、陳宏信，玻璃延性切削與刻畫切割製程之分析與實驗探討，機械月刊，第三十四卷第二期，2008年。
24. 李伯民、趙波，現代磨削技術，機械工業出版社，2003年。
25. D. Liu, W. L. Cong, Z. J. Pei, Y. Tang, A Cutting Force Model for Rotary Ultrasonic Machining of Brittle Materials, International Journal of Machine Tools &; Manufacture, 52, pp.77-84, 2012.
26. 賴梗陽，精密加工新技術全集，復漢出版社，1933年。
27. A. P. Harsha, U. S. Tewari, Two-Body and Three-Body Abrasive Wear Behaviour of Polyaryletherketone Composites, Polymer Testing, 22, pp.403-418, 2003.
28. T. Buley, J. Gagliardi, E. Funkenbusch, Study of STI Polishing Defects using 3M Fixed Abrasive Technology, CMP-MIC conference, pp.535-538, 2001.
29. 蔡明義，CMP鑽石修整器修整聚胺脂拋光墊表面特性之研究，國立臺灣大學，工學院機械工程研究所，博士論文。
30. H. Liang, F. Kaufman, R. Sevilla, S. Anjur, Wear Phenomena in Chemical Mechanical Polishing, Wear, 211, pp.271-279, 1997.
31. J. Seok, C. P. Sukam, A. T. Kim, J. A. Tichy, T. S. Cale, Multiscale Material Removal Modeling of Chemical Mechanical Polishing. Wear, 254, pp.307-320, 2003.
32. J. Sung, Y. L. Pai, CMP Pad Dresser：A Diamond Grid Solution, Proceedings of the Society of Grinding Engineers, pp.189-196, 2000.
33. 譚安宏、鄭穎駿、李正國、周呈祥與宋健民，鑽石修整器在化學機械拋光溶液中之腐蝕研究，防蝕工程，第20卷2期，163-168頁，2006年。
34. T. G. Bifano, T. A. Dow, R. O. Scattergood, Ductile-Regime Grinding: A New Technology for Machining Brittle Materials, Journal of Engineering for lndustry, 113, pp.184-189.
35. 王建榮、林必窈、林慶福，半導體平坦化CMP技術，全華科技圖書股份有限公司，2000年。
36. G. Ya, H. W. Qin, S. C. Yang, Y. W. Xu, Analysis of the Rotary Ultrasonic Machining Mechanism, Journal of Materials Processing Technology, 129, pp.182-185, 2002.
37. J. Zimmer, A. Stubbmann, Key Factors Influencing Performance Consistency of CMP Pad Conditioners, NCCAVS CMP ‘98 Symposium, pp.87-92, 1998.
38. 王卓、吳宇列、戴一帆、李聖怡、魯德鳳與徐惠贇，光學材料拋光亞表面損傷檢測及材料去除機理，國防科技大學學報，第31卷2期，107-111頁，2009年。
39. 項震、聶傳繼、葛劍虹、侯晶與許喬，光學元件亞表面缺陷結構的蝕刻消除，強激光與粒子束，第19卷3期，373-376頁，2007年。