(3.238.130.97) 您好!臺灣時間:2021/05/14 00:16
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果

詳目顯示:::

: 
twitterline
研究生:陳昱酋
研究生(外文):Yu-Qiu Chen
論文名稱:氮化銦鎵/氮化鎵發光二極體之極化效應分析
論文名稱(外文):InGaN / GaN Light Emitting Diode Polarization Analysis
指導教授:鄭岫盈
指導教授(外文):Shiou-Ying Cheng
口試委員:陳敬育朱閔聖葉昇平江孟學
口試日期:2014-05-17
學位類別:碩士
校院名稱:國立宜蘭大學
系所名稱:電子工程學系碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2014
畢業學年度:102
語文別:中文
論文頁數:81
中文關鍵詞:發光二極體、氮化銦鎵、極化效應
外文關鍵詞:light-emitting diodes, InGaN, Polarization effects
相關次數:
  • 被引用被引用:2
  • 點閱點閱:305
  • 評分評分:系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔
  • 下載下載:47
  • 收藏至我的研究室書目清單書目收藏:4
在本論文以美國SILVACO公司所開發TCAD軟體,探討二維光電元件的電學、熱學與光學等物理特性。將以Atlas元件模擬軟體,設計主動區截面尺寸為300 μm 300 μm的藍光氮化銦鎵/氮化鎵發光二極體元件,對藍光氮化銦鎵/氮化鎵發光二極體做詳細的分析、研究與探討,包括發光功率、能帶圖、發光頻譜等物理機制與光學特性。由於我們設計的藍光氮化銦鎵(InGaN)發光二極體,採用異質接面半導體多重量子井結構並以氮化鋁鎵材料做為電子阻擋層,可使藍光InGaN發光二極體元件能得到良好的載子侷限效應。
在本論文第一章中,介紹發光二極體的發展史及研究動機。第二章為介紹發光二極體材料的基本原理與特性,以及完整的討論III-V氮化物材料的特性。第三章介紹本論文深入探討基本元件方程式模型做完整的討論,並將模擬使用的TCAD理論時,所使用到之模型做完整的討論。第四章模擬找出InGaN/GaN各層在相同條件下重摻雜濃度之最佳化參數。最後並改變其極化效應,並分析在不同的極化效應下,對元件能帶圖特性變化之影響程度分析。
關鍵字:發光二極體、氮化銦鎵、極化效應
作者*陳昱酋
指導教授**鄭岫盈 博士

In these studies, the state-of-the-art two-dimensional device simulation tool, ATLAS, from SILVACO is being evaluated for the purpose of studying light-emitting diodes (LEDs). It predicts the electron behavior of specified semiconductor structures, and provides insight into the internal physical mechanisms associated with device operation.
We designed the active layer area is 300 μm 300 μm for blue InGaN/GaN multiple-quantum well (MQW) light-emitting diodes, using the SILVACO ATLAS tool, the two-dimensional device simulation package ATLAS was used to theoretically analyze physical device characteristic. Other important physical mechanisms and optical properties, such as luminescent power, electroluminescence intensity, energy band, electric field, carrier concentration, and recombination rate were also investigated in this study.
In this thesis, the first chapter, a brief history of the development of light-emitting diodes and motivation. The second chapter introduces the basic principles and characteristics of light-emitting diode materials, and a complete discussion of III-V nitride material properties. The third chapter describes the basic elements of this thesis depth to do a complete discussion of the model equations and theories used when TCAD simulation, the model used to do a complete discussion. Chapter IV simulation to identify InGaN / GaN layers doped concentration parameter optimization. Finally, changes its polarization effect, and analyzed at different polarization effects, the influence of an energy band diagram characteristic change element analysis.
Key words:light-emitting diodes, InGaN, Polarization effects
Author* Yu-Qiu Chen
Advisor** Shiou-Ying Cheng Ph.D.

摘要 I
Abstract III
誌謝 V
目錄 VI
表目錄 IX
圖目錄 X
Chapter 1 緒論 1
1-1 前言 1
Chapter 2 極化效應 4
2-1 GaN材料之介紹 4
2-1-1 Ⅲ-Ⅴ族氮化物簡介 6
2-2 晶格架構 9
2-3 應力 12
2-4 極化效應 13
2-4-1 偶極矩 16
2-4-2 總極化電荷計算 25
2-5 發光二極體工作原理 27
2-6 半導體復合 29
2-6-1 輻射復合 29
2-6-2 非輻射復合 33
2-7 發光二極體效率與功率效率 38
2-8 發光二極體發光效率 39
2-9 輻射光譜 40
2-9-1 流明效率(luminous efficiency) 43
Chapter 3 基本物理元件方程式 44
3-1 基本元件方程式 44
3-1-1 漂移-擴散模型 45
3-1-2 能量平衡傳輸 47
3-2 通用能隙模型 48
3-3 物理模型 49
3-4 載子產生與復合理論 50
3-4-1 表面復合 50
3-4-2 歐傑復合 51
3-4-3 夏克禮-里德-霍爾復合理論(SRH) 54
3-4-4 濃度依賴性壽命的SRH復合模型 54
3-5 載子統計的基本理論 55
3-5-1 本質載子濃度 55
3-5-2 半導體中的陷阱與缺陷 56
3-6 極化與應力電場計算 57
Chapter 4 元件結構與探討 58
4-1 軟體介紹 58
4-2 發光二極體結構 61
4-3 參數設定 63
4-3-1 極化電荷設定 63
4-3-2 材料參數設定 64
4-3-3 其他參數設定 65
4-4 探討極化效應對InGaN二極體之參數模型 66
4-4-1 實驗結果與分析 67
Chapter 5 總結 74
參考文獻 75

[1]E. Fred Schubert, Light-emitting diodes, Second edition, 2006.
[2]L. F. Eastman, et al, “The toughest transistor yet [GaN transistors]”,IEEE Spectrum Mag., vol.39, no. 5, pp.28 , 2002.
[3]Colin Wood, Debdeep Jena, "Polarization Effects in Semiconductors", 2008
[4]J. Piprek, Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation, San Diego: Academic Press, 2003.
[5]J. Singh, Electronic and Optoelectronic Properties of SemiconductorStructures, Cambridge: Cambridge Univ. Press, 2003, p. 37.
[6]P. Bhattacharya, Semiconductor Optoelectronic Devices, 2nd ed., New Jersey: Prentice Hall, 1997, p. 23.
[7]A. Yasan and M. Razeghi, “III-nitride ultraviolet light emitting sources,” in Optoelectronic Device: III-Nitrides, M. Razeghi and M. Henini, Eds., Kidlington , Oxford: Elsevier Ltd., 2004, p. 218.
[8]E. T. Yu, X. Z. Dang, P. M. Asbeck, S. S. Lau, and G. J. Sullivan, “Spontaneous and piezoelectric polarization in nitride heterostructures,” J. Vac. Sci. Technol. B, Vol. 17, pp. 1742-1749, 1999.
[9]蔡妙嬋, “氮化銦鎵藍光發光二極體極化效應之研究,” 國立彰化師範大學光電科技研究所碩士論文, 2008.
[10]O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, and L. F. Eastman, "Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures", J. Appl. Phys., Vol. 87, No. 1, pp.334-344, 1 January 2000
[11]O Ambacher, "Growth and applications of Group III-nitrides", J. Phys. D, vol.31, pp.2653–2710, 1998
[12]N. Zhang,” High voltage GaN HEMTs with low on-resistance for switching applications”, Doctor of Philosophy in Electrical and Computer Engineering, UNIVERSITY of CALIFORNIA Santa Barbara, 2002.
[13]U.K. Mishra , P. Parikh, Y.F. Wu,” AlGaN/GaN HEMTs: An overview of device operation and applications”, Proceedings of the IEEE, vol. 90, pp. 1-16, 2002.
[14]B. J. Baliga, "Trends in power semiconductor devices", IEEE Trans. Electron Devices, vol. 43, pp.1717-1731, 1996.
[15]梁春廣, 張冀, "GaN——第三代半導体的曙光",Chinese Journal of Semiconductors, 第20卷 第2期, 1999年2月
[16]林文偉, 郭艷光, 劉柏挺, "Zincblende結構三元氮化物的能帶模擬與分析", 物理雙月刊, 廿五卷四期, 2003年8月
[17]V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence fornonlinear macroscopic polarization in III–V nitride alloyheterostructures,” Appl. Phys. Lett., vol. 80, pp. 1204–1206, 2002.
[18]I. Vurgaftman and J. R. Meyer ,” Band parameters for nitrogen-containing semiconductors” ,J.Appl. Phy., Vol.94 NO 6 , 15 September 2003
[19]T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki, “Piezoelectric effect in group-III nitride-based heterostructures and quantum wells,” in III-V Nitride Semiconductors Applications and Devices, E. T. Tu and M. O. Manasreh, Eds., New York: Taylor & Francis, 2003, pp. 414–426.
[20]郭文泉, “氮化銦鎵/氮化鎵多層量子井之光學特性研究,”碩士畢業論文,國立中央大學(2000)
[21]林秉謙, “氮化鋁鎵/氮化鎵高電子遷移率場效電晶體特性研究,”碩士畢業論文,國立宜蘭大學(2012)
[22]Th. Gessmann, J. W. Graff, Y.-L. Li, E. L. Waldron, and E. F. Schubert, "Ohmic contact technology in III nitrides using polarization effects of cap layers", J. Appl. Phys., Vol. 92, No. 7, pp.3740, 1 October 2002
[23]O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, and L. F. Eastman, "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures", J. Appl. Phys., Vol.85, No.6, 15 March 1999.
[24]Th. Gessmann, Y.-L. Li, E.L.Waldron, J.W. Graff, E.F. Schubert, and J.K. Sheu, "Novel Type of Ohmic Contacts to P-Doped GaN Using Polarization Fields in Thin InxGa1-xN Capping Layers", Journal of Electronic Materials, Vol. 31, No. 5, 2002.
[25]吳政鴻,“摻雜量對氮化銦鎵/氮化鎵多層量子井光學與結構特性之研究,”碩士畢業論文,私立義守大學,2009
[26]王俊弘, “氮化鎵發光二極體氧化銦鋅透明導電層及其光電元件之研究,”碩士畢業論文,南台科技大學
[27]W. Shockley and W. T. Read, “Statistics of the recombinations of holes and electrons,” Phys. Rev., vol. 87, pp. 835-842, 1952.
[28]A. Zakauskas, M. S. Shur and R. Caska, “Introduction to Solid-State Lighting" John Wiley and Sons, 2002.
[29]M. R. Pinto, S. R. Conor, and W. D. Robert, PISCES2: Poisson and Continuity Equation Solver, Stanford Electronics Laboratory Technical Report, 1984.
[30]S. Selberherr, Analysis and Simulation of Semiconductor Devices, Wien, New York: Springer-Verlag, 1984.
[31]Sze, S.M. “Physics of Semiconductor Devices”. Wiley, 1981.
[32]Semiconductor Physics & Devices, Third Edition. Author:Donald A.Neamen.
[33]A. S. Grove, Physics and Technology of Semiconductor Devices, Wiley, 1967.
[34]Clugston, D.A. and P.A. Basore, Proceedings of the 26th IEEE Photovoltaic Specialists Conference, Anaheim, CA, 1997.
[35]Kerr, M.J., and A., Cuevas, Kerr, M.J., and A., Cuevas, "General Parameterization of Auger Recombination in Crystalline Silicon", J.Appl. Phys., Vol. 91, No. 4 (2002): 2473-2480.
[36]Huldt, L., N. G. Nilsson and K.G.Svantesson, “The temperature dependence of band-to-band Auger recombination in Silicon”, Applied Physics Letters, Vol. 35 (1979): 776-777.
[37]Hacker R., and A. Hangleiter, “Intrinsic upper limits of the carrier lifetime in Silicon”, J. Appl. Physics, Vol. 75 (1994): 7570-7572.
[38]K. Fujii, Y. Tanaka, K. Honda, H. Tsutsu, H. Koseki, and S. Hotta., “Process techniques of 15 inch full color and high resolution a-Si TFT LCD,” 5th Int. MicroProcess Conf., Kawasaki, 1992.
[39]M.E. Law, E. Solley, M. Liang, and D. E. Burk, “Self-Consistent Model of Minority-Carrier Lifetime, Diffusion Length, and Mobility,” IEEE Electron Device Lett., Vol. 12, pp. 401-403, 1991.
[40]D. J. Roulston, N. D. Arora, and S. G. Chamberlain, “Modeling and measurement of minority-carrier lifetime versus doping in diffused layers of n±p silicon diodes,” IEEE Trans. Electron Devices, Vol. 29, pp. 284-291, 1982.
[41]吳柔萱,“改善氮化銦鎵/氮化鎵發光二極體研究,”碩士畢業論文,國立宜蘭大學(2013)
[42]Yu, Z., and R.W. Dutton, “SEDAN III-A Generalized Electronic Material Device Analysis Program”, Stanford Electronics Laboratory Technical Report, Stanford University, July 1985.
[43]Joyce, W.B., and R.W. Dixon, “Analytic Approximation for the Fermi Energy of an ideal Fermi Gas”, Appl. Phys Lett. 31 (1977): 354-356.
[44]S. Nakamura, “GaN-based blue/green semiconductor laser,” IEEE J.Sel. Topics Quantum Electron., vol. 3, pp. 435–442, 1997.
[45]T. C. Wen, S. J. Chang, L. W. Wu, Y. K. Su, W. C. Lai, C. H. Kuo, C.H. Chen, J. K. Sheu, and J. F. Chen, “InGaN/GaN tunnel-injection blue light-emitting diodes,” IEEE Trans. Electron Dev., vol. 49, pp. 1093–1095, 2002.
[46]S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H.Liaw, “InGaN–GaN multiquantum-well blue and green light-emitting diodes,” IEEE J. Sel. Topics Quantum Electron., vol. 8, pp. 278–283, 2002.
[47]J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S.J. Chang, and Y. K. Su, “White-light emission from InGaN–GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett., vol. 14, pp. 450–452 ,2002.
[48]T. N. Oder, K. H. Kim, J. Y. Lin, and H. X. Jiang, “III-nitride blue and ultraviolet photonic crystal light emitting diodes,” Appl. Phys. Lett., vol. 84, pp. 466–468, 2004.
[49]J. Shakya, K. Knabe, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang,“Polarization of III-nitride blue and ultraviolet light-emitting diodes,”Appl. Phys. Lett., vol. 86, pp. 091107-1–091107-3, 2005.
[50]K. Akita, T. Kyono, Y. Yoshizumi, H. Kitabayashi, and K. Katayama, “Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates,” Appl. Phys. Lett., vol. 101, pp. 033104-1–033104-3, 2007.
[51]S.-N. Lee, H. S. Paek, H. Kim, T. Jang, and Y. Park, “Monolithic InGaN-based white light-emitting diodes with blue, green, and amber,”
[52]I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloys,” J. Appl. Phys.,vol. 89, pp. 5815–5875, 2001.
[53]T. Matsuoka, H. Okamoto, Masashi Nakao, H. Harima, and E.Kurimoto, “Optical bandgap energy of wurtzite InN,” Appl. Phys.Lett., vol. 81, pp. 1246–1248, 2002.
[54]I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys., vol. 94, pp.3675–3696, 2003

QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
系統版面圖檔 系統版面圖檔