隨著半導體（Semiconductor）元件的持續微縮，微粒缺陷 ( Particle ) 扮演著舉足輕重的角色。在維持良好半導體的情況下，持續針對元件進行微縮，並同時提升元件的效能，因此微粒缺陷技術開始引起應用和研究，生產過程中如何降低。本論文即是針對應用減少微粒缺陷技術，其相關特性進行研究、分析及探討。
首先，我們針對 90 奈米製程中造成微粒缺陷型態和特性種類，進行分門別類。分類找尋出生產過程中，會產生微粒缺陷因子，使用六何分析法探討，影響微粒缺陷問題方向定位，再利用魚骨圖，將問題定位區域作為研究方針，把化學氣相沉積直立式爐管氮化矽 (Silicon Nitride) 增加微粒缺 陷路徑相關會因素劃分清楚。然而，產生微粒缺陷必須分別考量，沉積前後所產生的微粒缺陷，這對探討研究有著很重要之依據，避免解決問題方向錯誤。
接著，我們藉由六何分析法去探討和魚骨圖區域劃分，在化學氣相沉積直立式爐管氮化矽生產的製程當中，添增一道應變技術，使得微粒缺陷發生時，可進行分析歸類，這對未來半導體元件的持續微縮技術提昇帶來諸多好處，讓元件在線寬縮小至 20 奈米時，漏電流以及低頻雜訊亦可獲得改善。
最後，我們發現利用微粒缺陷特性，可依微粒缺陷圖形分類，依類別進行解決，方可大大縮短解問題時間。未來，半導體元件持續微縮，相信各種製程微粒缺陷控制會更加嚴苛，唯有不斷探討研究，才可再將技術提升。

As the size of semiconductor devices continue to shrink, particle plays an important role in vital defects. Recently, high-performance and small-size electronic components are highly developed using nano- scale-semiconductor technology. At the nanoscale, particle defects become more challenging in the next generation semiconductor process.
In this work, we had analyzed possible transport paths of particle defects. At first, patterns and characteristics of particle defects were analyzed and classified into different types and categories using why-why issue analysis and fishbone diagram as the research policy to identified the problems. As we compared before and after the deposition, it was found that parts of particle defects was caused by the transport path when a vertical furnace was used for chemical vapor deposition of silicon nitride.
Next, we applied why-why analysis and fish bone diagram to explore key sources of particle defects resulting from the chemical vapor deposition of silicon nitride. We had made an observation of the occurrence of particle defects by giving higher pressure in the vertical furnace to help to analyze and classify problems. The analyzed methodology can save us much time for solving problems. In the future, as the size of semiconductor components continues to shrink particle defects will be a top topic in product yields.

摘要…………………………………………………………………… I
Abstract……………………………………………………………… III
誌謝…………………………………………………………………… IV
目錄…………………………………………………………………… V
表目錄…………………………………………………………… VII
圖目錄…………………………………………………………… VIII
第一章 緒論 ……………………………………………………1
1-1 研究背景與動機……………………………………… 6
1-2 研究目的……………………………………………… 13
1-3 內容摘要……………………………………………… 14
第二章 研究方法………………………………………………15
2-1 魚骨圖 ………………………………………………… 15
2-2 戴明循環手法 PDCA ………………………………… 18
2-3 六何分析法………………………………………………19
第三章 研究分析 ………………………………………………20
3-1 實驗製程機台簡介……………………………………… 20
3-2 保養材料簡介……………………………………… 23
3-3 附屬設備簡介 …………………………………………… 26
3-4 實驗機台程式簡介 ……………………………………… 27
3-5 測量儀器簡介…………………………………………… 38
第四章 實驗系統……………………………………………40
4-1 晶圓表面微粒缺陷影響指標 ………………………… 40
4-2 低壓化學氣相沉積微粒缺陷分析 ……………………41
4-3 晶圓表面微粒缺陷影響指標改善方法 ……………… 45
第五章 實驗結果與討論…………………………………56
5-1 局部圖形微粒缺陷之實驗 ……………………… 56
5-2 無特定狀圖形微粒缺陷之實驗 ………………………66
5-3 實驗分析歸納……………………………………………77
第六章 結論………………………………………………………79
第七章 未來發展………………………………………………81
參考資料 …………………………………………………… 82

[1] Hong Xiao著, 羅正忠、張鼎張 譯, “半導體製程技術導論”, 學銘圖書有限公司代理, 台灣培生教育出版股份有限公司, pp1~599 , 9月95年.
[2] M. S. Bawa, E.F. Petro, and H. M. Grimes, "Fracture strength of large diameter silicon wafer," Semiconductor International, vol. 18, no. 11, pp. 115-118, Nov. 1995.
[3] R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 2nd ed. New York: Wiley, 1986.
[4] S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: John Wiley & Sons, 1981.
[5] J. Turley, The Essential Guide to Semiconductors. New York: Prentice Hall PTR, 2003
[6] P. Y. Yu and M. Cardona, Fundamentals of Semiconductors: Physics and Materials Properties. Berlin, Springer, 2004.
[7] H. De Waard, “Modeling and control of diffusion and low-pressure chemical vapor deposition furnaces,” Journal of Applied Physics, vol. 67, no. 5 , pp. 2264-2271, Mar. 1990.
[8] M. C. Öztürk, F. Y. Sorrell, J. J. Wortman, and F. S. Johnson, “Manufacturability issues in rapid thermal chemical vapor deposition, ” IEEE Transactions on Semiconductor Manufacturing, vol. 4, no. 2, pp. 155-165, May 1991.
[9] O. N. Carlson, “The N-Si (Nitrogen-Silicon) System,” Bulletin of Alloy Phase Diagrams, vol. 11, no. 6, pp. 569-573, Dec. 1990.
[10] H. Deville and F. Wohler, “Erstmalige Erwahnung von Si3N4,” Liebigs Ann. Chem., vol. 104, no. 38, pp. 1-256. 1857.
[11] L. Weiss and T. Engelhardt, “Über die Stickstoffverbindungen des Siliciums,” Z. Anorg. Allgem. Chem., vol. 65, no. 1, pp. 38-104, Feb. 1910.
[12] E. Friedrich and L. Sittig, “Herstellung und Eigenschaften von Nitriden, ” Z. Anorg. Allgem. Chem., vol. 143, pp. 293-320, 1925.
[13] M. Shenasa; M. Moninpour; B. O 'Toole; B. Stueve; R. Wilkes; J. Reece; D. Borror; J. Glarneau,“Optimization of LPCVD silicon nitride process in a vertical thermal reactor: Use of design of experiments” in Proc. ASMC 92 Conf. IEEE/SEMI 1992, Cambridge, MA, Sep. 1992, pp. 216-219.
[14] SIC 成分特性分析報告, 晶友（TPSS）公司, p2~5, 2月, 2012年.
[15] QUIXACE Manual, 亞太國際（HKE）公司, p1~p26, 2006.
[16] 陳柏仁, “二矽烷爐管製程設備危害與風險評,”國立中央大學, 環境工程研究所碩士論文, 2011.
[17]林瑞玉, “矽甲烷供應系統相關製程危害分析資料庫建制與應用研究,”國立交通大學, 產業安全與防災學程碩士班, 碩士論文, 2003.
[18] K. H. Patel; K. Chauhan; D. G. Subhedar, “Design and fabrication of a system for silastic silicone rubber o-ring” in Proc. ICETET, 2009, Nagpur, Dec. 2009, pp. 116-120.
[19] F. Sun; T. Yu; W. Cui; X. Zong, “The seal reliability analysis of oring seals” in Proc. 8th International Conf. on Reliability, Maintainability and Safety ICRMS 2009, Chengdu, July 2009, pp. 1293-1296.
[20] H. Ao; H. Jiang; H. Zhao, “Modeling and experimental study of linear expansion characteristics of metallic rubber material in sealing structure” in Proc. 3rd International Symposium on System and Control in Astronautics and Astronautics ISSCAA 2010, Harbin, June 2010, pp. 1228-1232.
[21] SFSCAN Manual, KLA-Tencor_美商科磊股份有限公司台灣分公司, pp. 2~10, 4月, 2006年.