臺灣博碩士論文加值系統

電化學沉積方式，可分為定電位與定電流兩種，本論文將分成定電位、定電流兩個大方向。定電流可提供基材穩定電流值，電化學沉積反應速率較穩定；定電位可以控制施加電位，以利改變材料的結晶方向。
第一部分做定電流氧化亞銅薄膜特性最佳化之研究，其中控制因子A為定電流、B為pH值、C為沉積時間及D為溫度，A控制因子設定在-2mA~-8mA，B控制因子設定在pH7~12、C控制因子設定在180s~900s及D控制因子設定在55~70℃。
第二部分做定電位氧化亞銅薄膜特性最佳化之研究，其中控制因子A為定電位、B為pH值、C為沉積時間及D為溫度，A控制因子設定在-0.35V~-0.5V，B控制因子設定在pH7~12、C控制因子設定在180s~900s及D控制因子設定在55~70℃。
而每一控制因子皆有三個水準數，先以實驗將水準數設定成三個，藉由直交表L9(34)控制上述之參數，量測其晶粒大小、(111)與(200)XRD繞射峰值比、穿透率，再用灰關聯分析，求出最佳化參數。
利用銅鉑(99.9%)當作基板，電化學沉積氧化亞銅薄膜實驗，電位改變影響材料結晶方向，經由穩定的控制形成氧化亞銅結晶方向；定電流會影響沉積之電壓值，因此結晶相比定電位較難控制；pH值變大，造成相位轉換且顆粒變大；沉積時間影響其厚度增加，晶粒大小的變化不明顯；溫度升高會造成結晶顆粒變大，能得到較強之繞射峰值。

Both constant current and voltage electrodeposition are adopted to deposit the cuprous oxide thin films on both copper foil and ITO glass substrates. Using Taguchi method, either constant current or voltage, pH value, deposition time, and electrolyte temperature are chosen as the control factor A, B, C and D, respectively. The ranges of control factors A, B, C, and D are -0.35V ~-0.5V, pH7 ~ 12, 180s ~ 900s, and 55 ~ 70 ℃, respectively.
A orthogonal array L9 (34) is designed to conduct the electrodeposition experiments. The grain size, diffraction peak ratio of phase (111) and (200), and visible transmittance spectrum are the characteristics measured by XRD and transmission spectrometer, and then followed by the gray relational analysis for the optimal parameter.
Using copper foil (99.9%) as the substrate, electrochemical deposition of cuprous oxide film can result a more uniform crystal preferred phase by constant voltage deposition and a larger grain size by increasing electrolyte temperature. In contrast, the constant current electrodeposition of cuprous oxide film usually lead to a mixed phase of (111) and (200) due to the changing electrode potential.

中文摘要 I
ABSTRACT II
誌謝 III
目錄 I V
表目錄 IX
圖目錄 XII
第一章 緒論 1
1.1 前言 1
1.2 研究動機與目的 2
1.3 研究架構 3
第二章 理論說明與文獻回顧 4
2.1 銅 4
2.2 氧化亞銅 6
2.3 電化學原理 7
2.3.1 成核、成長的方式 8
2.3.2 結晶結構理論 10
2.4電化學沉積氧化亞銅 11
2.5田口法理論探討 13
2.5.1 品質設計 13
2.5.2參數設計 13
2.5.3信號雜音比 15
2.5.4變異數分析 17
2.6灰關聯分析法 19
第三章 研究方法與步驟 21
3.1實驗用藥品與器材 21
3.2實驗規劃 23
3.2.1控制因子分析 25
3.2.2定義控制因子與水準 26
3.2.3選定直交表 26
3.2.4資料分析 27
3.3實驗方法 28
3.3.1氧化亞銅溶液之配置 28
3.3.2電化學沉積之基材拋光 28
3.3.3氧化亞銅薄膜之沉積 29
3.3.4蝕刻銅箔基板 30
3.4電化學沉積分析儀器 31
3.4.1掃瞄式電子顯微鏡 31
3.4.2 X光繞射分析儀 33
3.4.3可見光穿透率量測儀 34
3.4.4循環伏安 35
第四章 結果與討論 36
4.1氧化亞銅薄膜結構之探討 37
4.1.1定電位對電化學沉積氧化亞銅薄膜的影響 37
4.1.2定電流對電化學沉積氧化亞銅薄膜的影響 40
4.1.3 PH對電化學沉積氧化亞銅薄膜的影響 42
4.1.4沉積時間對電化學沉積氧化亞銅薄膜的影響 45
4.1.5溫度對電化學沉積氧化亞銅薄膜之影響 51
4.2參數設定與分析 54
4.2.1設定控制因子之水準數 54
4.2.1直交表實驗分析 55
4.3定電流沉積氧化亞銅於銅箔基板成長與特性 56
4.3.1定電流沉積氧化亞銅薄膜於銅箔基板表面形態 56
4.3.2定電流沉積氧化亞銅薄膜於銅箔基板結構分析 58
4.3.3定電流沉積氧化亞銅薄膜於銅箔基板不同結晶方向成長 61
4.3.4定電流沉積氧化亞銅薄膜於銅箔基板光學特性分析 62
4.3.5灰關聯分析 66
4.3.6驗證實驗 70
4.4定電位沉積氧化亞銅於銅箔基板成長與特性 74
4.4.1定電位沉積氧化亞銅薄膜於銅箔基板表面形態 74
4.4.2定電位沉積氧化亞銅薄膜於銅箔基板結構分析 76
4.4.3定電位沉積氧化亞銅薄膜於銅箔基板不同結晶方向成長 79
4.4.4定電位沉積氧化亞銅薄膜於銅箔基板光學特性分析 80
4.4.5灰關聯分析 84
4.4.6驗證實驗 88
4.5氧化亞銅於銦錫氧化物基板成長與特性 93
4.5.1定電位沉積氧化亞銅薄膜於ITO基板薄膜表面形態 93
4.5.2定電位沉積氧化亞銅薄膜於ITO基板結構分析 95
4.5.3定電位沉積氧化亞銅薄膜於ITO基板不同結晶方向成長 98
4.5.4定電位沉積氧化亞銅薄膜於ITO基板光學特性分析 99
4.5.5灰關聯分析 103
4.5.6驗證實驗 106
4.6氧化亞銅與氧化鋅薄膜I-V量測 111
第五章 結論 115
參考文獻 117

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