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研究生:王慧娟
研究生(外文):Huei-Jruan Wang
論文名稱:氧化石墨烯於互補式電阻切換記憶體及仿生元件機制探討
論文名稱(外文):Study on Complementary Resistive Switching Memory Mechanism and Bionic Device Of Graphene Oxide Structure
指導教授:蔡宗鳴
指導教授(外文):Tsung-Ming Tsai
學位類別:碩士
校院名稱:國立中山大學
系所名稱:材料與光電科學學系研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2014
畢業學年度:102
語文別:中文
論文頁數:97
中文關鍵詞:脈衝時間依賴可塑性仿生互補式電阻切換記憶體電阻式記憶體氧化石墨烯
外文關鍵詞:Spike timing dependent plasticityGraphene oxideResistance random access memoryBiomimicryComplementary resistance switch
相關次數:
  • 被引用被引用:1
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  • 下載下載:16
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隨著科技的進步,記憶體須具備高容量及省電以利於可攜式電子產品上,近幾年來快閃記憶體達微縮極限。因此次世代非揮發性記憶體的開發便成為一項熱門研究,其中電阻式隨機存取記憶體(Resistance Random Access Memory, RRAM)擁有結構簡單、高密度、操作速度快、持久度高和儲存時間長等優點。另外,仿生科技近幾年已被廣泛討論,而RRAM具有類似人腦神經元的類比訊號傳遞功能值得研究。
本研究利用氧化石墨稀(Graphene Oxide, GO)結構,使其在RRAM應用面的改善作為研究主軸,而RRAM最迫切的問題在於陣列化後,因電路而產生的潛行電流所導致之誤判情況。透過互補式電阻切換記憶體(Complementary Resistance Switch, CRS)結構可有效解決潛行電流誤判問題。此外,實驗利用RRAM成功模擬出大腦神經元的操作模式,此種模式是以類比訊號儲存,因此未來能夠研發出功能更為強大的記憶體。
值得一提的是,CRS結構雖可解決潛行電流誤判但操作穩定性差。而本研究中成功的利用氧化石墨稀安定性高且導電性良好等特性,使氧化石墨稀互補式電阻切換記憶體(GO CRS)可穩定操作達到三萬次,並經由不同的操作電壓分析CRS無法穩定操作的成因。此外,本研究亦成功使用GO RRAM模擬出類比訊號及脈衝時間依賴可塑性(Spike timing dependent plasticity, STDP)。
With the progress of technology, high capacity and scalable are required in the future. Recent years, the physical limit is approached and a next-generation memory is inevitably. In addition, non- volatile memory occupies more than 96% in the memory market, and Resistance Random Access Memory (RRAM) has great advantages such as simple structure, low operation voltage, high operation speed, high endurance and retention. That is the reason RRAM is the candidate in the next generation.
Study on Graphene oxide structure to improve RRAM performance is the topic in this theory. In crossbar structure, a sneak path current will cause misjudgment. Hence, a Complementary Resistance Switch Memory (CRS) is used to solve this misjudgement. However, CRS is disadvantage in endurance. In this experiment, GO CRS is successful to reach 30000 operation times.
We imitate nature species to solve science problems. Similar to neuron, GO RRAM has high capacity, scalable, and low consumption. That is why GO RRAM is one of the Biomimicry memory devices. In this study, we focus on multilayer state and Spike timing dependent plasticity (STDP) of GO RRAM.
論文審定書 i
致謝 ii
摘要 iii
Abstract iv
目錄 v
圖目錄 viii
表目錄 xii
第一章 序論 1
1-1 前言 1
1-2 研究目的與動機 2
第二章文獻回顧 3
2-1 記憶體簡介 3
2-1.1 次世代記憶體簡介 3
2-2 互補式電阻切換記憶體(Complementary Resistive Switching) 8
2-2.1 CRS定義 9
2-2.2 CRS操作 10
2-2.3 CRS讀取與寫入 13
2-2.4 CRS與傳統RRAM 15
第三章 實驗設備與原理 17
3-1 多靶磁控濺鍍系統( Multi-Target Sputter) 17
3-2 N &; K薄膜特性分析儀(N &; K analyzer) 17
3-3 傅立葉轉換紅外光譜儀 (Fourier-Transform Infrared Spectrometer) 18
3-4 X光光電子能譜儀(X-ray Photoelectron Spectroscopy) 20
3-5 拉曼散射光譜儀 Raman 20
3-6 半導體精準電性量測系統 21
第四章實驗相關知識介紹 25
4-1 電性量測相關名詞解釋 25
4-2 材料分析介紹 26
第五章 元件備製與材料分析 27
5-1 元件備製 27
5-2 材料分析結果 28
第六章Graphene oxide CRS量測 35
6-1 元件基本特性介紹 35
6-1.1 何為Graphene Oxide? 35
6-1.2 Graphene oxide RRAM 基本特性 36
6-2 CRS Forming及 單顆元件操作 38
6-3 CRS的量測結果 41
6-3.1 CRS對稱電壓操作結果 41
6-4 Measure 分析 43
6-4.1 量測方法 43
6-4.2 操作結果 43
6-4.3 操作結果分析 43
6-5 GO CRS非對稱性電壓量測 48
6-5.1 GO CRS 操作原理 48
6-5.2 非對稱性的操作方式 48
6-5.3 GO CRS非對稱性電壓及Endurance 49
6-6 結論 54
第七章 氫離子效應 56
7-1 NBTI (Negative Bias Temperature Instability) 56
7-2 氫離子效應CRS 56
7-3 結論 58
第八章 仿生元件 64
8-1 何為仿生? 64
8-2 大腦與神經突觸 64
8-3 Graphene oxide RRAM仿生 69
8-3.1 Multilayer layer state 69
8-3.2 STDP實驗結果 70
8-3.3 Pulse times 70
8-4 結論 70
第九章 總結 79
參考文獻 Reference 81
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