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研究生:林佳賢
研究生(外文):Chia-Hsien Lin
論文名稱:K頻帶印刷電路板到低溫共燒陶瓷錫球網格陣列轉接補償及V頻帶低溫共燒陶瓷到低溫共燒陶瓷覆晶轉接設計
論文名稱(外文):K band PCB-to-LTCC BGA transition compensationand V band LTCC-to-LTCC flip-chip transition design
指導教授:盧信嘉
口試委員:邱奕鵬黃定彝
口試日期:2014-07-31
學位類別:碩士
校院名稱:國立臺灣大學
系所名稱:電信工程學研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2014
畢業學年度:102
語文別:中文
論文頁數:102
中文關鍵詞:覆晶技術多層介質轉接準同軸線架構垂直轉接錫球網格陣列
外文關鍵詞:flip-chimulti-layer substratequasi-coaxial structurevertical transitionball grid array(BGA)
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此論文總共分成兩部分:第一部分為錫球網格陣列補償設計,主要為印刷電路板與低溫共燒陶瓷間利用錫球陣列加熱,凝固後將兩板連接,兩板均以微帶線連接錫球,在錫球兩端微帶線設計補償電路,能在傳輸端及接收端達到 及 -20dB或更好的結果頻率為19GHz +/- 1GHz及29GHz +/- 1GHz。第二部分為覆晶轉接配合多層介質內層轉接的設計,此部分為利用準同軸線結構當內層轉接,同時在覆晶轉接也以準同軸線架構黏接,改變傳統的GSG黏接,其利用在40GHz到70GHz的頻帶中,本論文期望能在如此寬頻中達到 及 -10dB或更好,成為能達成各頻帶皆能使用的轉接設計。

This thesis is divided into two parts: firstly, it is about BGA (ball grid array) transition compensation design with hi-low impedance. The connections between PCB and LTCC (low temperature co-fired ceramic) substrate are made by reflow of solder balls. Microstrip line is used in this transition. and can be better than -20dB at 19GHz +/- 1GHz and 29GHz +/- 1GHz. Secondly, we will design the flip-chip transition in multi-layer substrate using quasi-coaxial line as a vertical inner transition. New quasi-coaxial type bumps replace traditional GSG flip-chip bumps are used in the range from 40GHz to 70GHz. It could reach better than 10dB in return loss and be a broadband flip-chip transition.

口試委員會審定書 #
誌謝 i
中文摘要 ii
ABSTRACT iii
目錄 iv
圖片目錄 viii
表目錄 xv
第1章 簡介 1
1.1 背景 1
1.2 K頻帶及V頻帶介紹 1
1.3 印刷電路板(PCB) 2
1.4 低溫共燒陶瓷(LTCC) 2
1.5 錫球網格陣列(BGA) 6
1.6 覆晶技術(Flip-chip) 8
1.6.1 異方性導電膜(ACF)/非導電性膠(NCF)介紹 9
1.7 文獻回顧 10
1.7.1 覆晶接合轉接 10
1.7.2 內部垂直轉接 11
1.7.3 準同軸線架構 12
第2章 錫球網格陣列補償 15
2.1 π-模型與微帶線設計 15
2.1.1 材料參數及尺寸 15
2.1.2 設計目標 17
2.1.3 π-模型轉換介紹 17
2.1.4 微帶線設計 19
2.1.5 步階阻抗(stepped-impedance) 21
2.2 等效電路補償設計 22
2.2.1 29GHz錫球網格陣列補償 23
2.2.2 19GHz錫球網格陣列補償 28
2.3 等效電路與電路佈局轉換 30
2.3.1 29GHz等效電路轉換 30
2.3.2 19GHz等效電路轉換 37
2.4 補償電路佈局調整 38
2.4.1 29GHz實際電路佈局調整 38
2.4.2 19GHz實際電路佈局調整 41
2.5 最終調整 45
2.5.1 29GHz最終設計 45
2.5.2 19GHz最終設計 49
第3章 覆晶技術轉接設計 53
3.1 微帶線轉微帶線結構設計 53
3.2 垂直轉接設計 55
3.2.1 準同軸線阻抗 55
3.2.2 內部垂直轉接 59
3.2.3 材料尺寸及設計目標 65
3.2.4 TypeⅠ-微帶線(MS)轉帶線(SL)轉微帶線(MS) 65
3.2.5 TypeⅡ-微帶線(MS)轉微帶線(MS) 73
3.2.6 TypeⅢ-微帶線(MS)轉帶線(SL)轉微帶線(MS) 79
第4章 量測 84
4.1 量測環境與機台介紹 84
4.1.1 GSG探針 84
4.1.2 下針量測機台 84
4.1.3 覆晶機台(flip-chip bonder) 85
4.1.4 金線焊線機(gold wire ball bonder) 86
4.2 TRL測試電路介紹與量測 87
4.2.1 TRL介紹 87
4.3 錫球網格陣列轉接補償量測 92
4.4 覆晶設計轉接量測 97
第5章 結論與未來展望 99
5.1 結論 99
5.2 未來展望 99
參考文獻 100



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[2]Rogers RO4003C datasheet. Available: http://www.rogerscorp.com/acm/products/54/RO4003C-Laminates.aspx
[3]LTCC multi-layer. Available: http://www.minicaps.com/ltcc3d2.gif
[4]ACXC website. Available: http://www.acxc.com.tw/technology.php
[5]S. Tostado and J. Chow, "Assembly process and solder joint integrity of the metal ball grid array (MBGA TM) package," in 1996. Proceedings 46th Electronic Components and Technology Conference, May 1996, pp. 1265-1270.
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[8]Myung Jin Yim, In Ho Jeong, Hyung-Kyu Choi, Jin-Sang Hwang, Jin-Yong Ahn, Woonseong Kwon, and Kyung-Wook Paik, "Flip chip interconnection with anisotropic conductive adhesives for RF and high-frequency applications," IEEE Transactions on Components and Packaging Technologies, vol. 28, no.4, pp. 789-796, Dec. 2005.
[9]Joung-Woong Kim, Young-Chul Lee, Jae-Hoon Ko, Wansoo Nah, Myung Yung Jeong, Hyuk-Chon Kwon, and Seung-Boo Jung, "Microwave performance of flip chip interconnects with anisotropic and non-conductive films," Journal of Adhesion Science and Technology, vol. 22, pp. 1339-1354, 2008.
[10]Chun-Long Wang and Ruey-Beei Wu, "Modeling and design for electrical performance of wideband flip-chip transition," IEEE Transactions on Advanced Packaging, vol. 26, no.4, pp. 385-391,Nov. 2003.
[11]Huei-Han Jhuang and Tian-Wei Huang, "Design for electrical performance of wideband multilayer LTCC microstrip-to-stripline transition," in EPTC 2004 Proceedings of 6th Electronics Packaging Technology Conference. Dec. 2004, pp. 506-509.
[12]Rony E. Amaya, Ming Li, Khelifa Hettak, and Cornelius J. Verver, "A broadband 3D vertical microstrip to stripline transition in LTCC using a quasi-coaxial structure for millimetre-wave SOP applications," in 2010 European Microwave Conference (EuMC). Sep. 2010, pp. 109-112.
[13]David M. Pozar, Microwave engineering: John Wiley &; Sons, USA, 2009.
[14]Hussein H. M. Ghouz and El-Badawy El-Sharawy, "An accurate equivalent circuit model of flip chip and via interconnects," IEEE Transactions on Microwave Theory and Techniques, vol. 44, no.12, pp. 2543-2554, Dec. 1996.
[15]Hsin-Chia Lu, Che-Chung Kuo, P0-An Lin, Chen-Fang Tai, Yi-Long Chang, Yu-Sian Jiang, Jeng-Han Tsai, Yue-Ming Hsin, and Huei Wang, "Flip-chip-assembled-band CMOS chip modules on ceramic integrated passive device with transition compensation for millimeter-wave system-in-package integration," IEEE Transactions on Microwave Theory and Techniques, vol. 60, no.3, pp. 766-777, Mar. 2012.
[16]D. K. Cheng, "Fundamentals of engineering electromagnetics,": Addison-Wesley, USA, 1993.
[17]Chih-Chun Tsai, Yung-Shou Cheng, Ting-Yi Huang, and Ruey-Beei Wu, "A wide-band microstrip-to-microstrip multi-layered via transition using LTCC technology," in IEEE EDAPS 2009 Electrical Design of Advanced Packaging &; Systems Symposium. Dec. 2009, pp. 1-4.
[18]Wei-Cheng Wu, Edward Yi Chang, Ruey-Bing Hwang, Li-Han Hsu, Chen-Hua Huang, Camilla Karnfelt, and Herbert Zirath, "Design, fabrication, and characterization of novel vertical coaxial transitions for flip-chip interconnects," IEEE Transactions on Advanced Packaging, vol. 32, no.2, pp. 362-371, May. 2009.
[19]GSG probe. Available: http://www.cascademicrotech.com/
[20]Ball bond picture. Available: http://www.micronnection.com/consulting.php?language=fr


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