本研究探討PECVD系統腔體構造對於內部氣體流動以及電漿噴流下游流動的影響，運用商用套裝軟體(Fluent以及COMSOL)進行PECVD系統之數值模擬，其中使用k-ε紊流模型、熱傳模型以及化學模型三種模型並耦合進行計算。
由於電漿內部有許多種物質且相互產生不同的化學反應，無法直觀地建立模型進行數值模擬，因此先使用紊流模型耦合熱傳模型，模擬PECVD系統反應室內部熱流場。本研究中所使用的腔體經過改善後能減弱氣流的渦漩流動，並使得出口端氣流皆鉛直向下流動。此外，為建立可模擬電漿反應的模型，並與既有實驗結果比對，以證明化學模型確實能模擬電漿反應，故建立常壓噴流式電漿模型進行模擬。由模擬結果可知，噴流高度在某一高度以下，管內電漿放光強度會突增，此結果與實驗相符。噴流高度較高時有較大的回流現象，此回流可促使氧氣進入管內與激發態氮氣混合，進行驟冷反應影響電漿噴流外觀，此結果說明放光強度變化的原因。最後耦合化學模型模擬PECVD系統之電漿，進行腔體下游區氣流變化的研究。由模擬結果比較氧氣進入電漿下游區域的含量，經過改善的腔體模型下游區域氧氣含量相對較低。
由模擬結果可知，經改善過的腔體能使氣流均勻流出腔體，使鍍膜材料被均勻地輸送，且因氧氣含量較低使氮氣激發態分子被驟冷的量較少，應能更有效地氣化前驅物。

In this study, numerical simulation of the nitrogen plasma jet at atmospheric pressure is performed. In terms of commercial software, three types of models, namely k-ε turbulent flow model, heat transfer in fluids model and chemical reaction model are adopted.
Without complication of plasma reactions in the first place, we couple the k-ε turbulent flow model and heat transfer in fluids model to simulate the flow of PECVD chamber. Simulation results show that the modified design of chamber weakens the vortex and makes the mixed material delivered straight and uniformly, hence improve the quality of coating. Furthermore, in order to build a reliable chemical model for plasma simulation, we implement an atmospheric pressure plasma jet model. We compare the simulation results with the experiment results to validate the chemical model. Simulation results show that visible jet length and width will grow in a sudden when the height of plasma jet is lower than a certain height, which conforms to the observation of experiment results. This is due to the streamlines show that there is a backflow carrying the oxygen into the tube, and the excited state nitrogen densities decrease drastically due to the interaction of oxygen and the jet, which leading to quench. Based on the chemical model, we analyze different geometry design in the PECVD downstream. Simulation results show the profiles of oxygen density in the downstream of modified design of chamber are fewer, which means that excited state nitrogen has been quenched less, hence the light emission intensities are greater. With the effects of a porous plate, the flow appears much more uniform, with stronger reactions of plasma.

口試委員審定書 i
誌謝 ii
中文摘要 iii
Abstract iv
目錄 v
圖目錄 viii
表目錄 xi
符號表 xii
第一章 緒論 1
1.1 前言 1
1.2 文獻回顧 2
1.2.1 電漿應用簡介 2
1.2.2 常見的常壓電漿製程 2
1.2.3 電漿流場模擬 3
1.2.4 氧氣添加對電漿之影響 7
1.2.5 常壓電漿化學模擬 10
1.2.6 電漿輔助化學氣相沉積相關應用介紹 12
1.3 研究動機 14
第二章 研究方法 15
2.1 數值分析軟體 15
2.1.1 前言 15
2.1.2 ANSYS Fluent介紹以及處理程序 15
2.1.3 COMSOL Multiphysics簡介以及處理程序 16
2.1.4 ANSYS Fluent與COMSOL Multiphysics比較 18
2.2 模擬流場模型 19
2.2.1 紊流模型 19
2.2.2 化學模型 24
2.2.3 混合氣體物理性質 27
第三章 流場幾何與設定 29
3.1 Fluent與COMSOL模擬熱流場 29
3.1.1 模擬流場基本假設 29
3.1.2 流場模型簡介 29
3.1.3 邊界與初始條件 31
3.1.4 軟體設定細節 32
3.2 PECVD腔體內部流場模型 36
3.2.1 模擬流場基本假設 36
3.2.2 流場模型簡介 36
3.2.3 邊界與初始條件 39
3.2.4 軟體設定細節 40
3.3 常壓氮氣噴流式電漿模型 41
3.3.1 模擬流場基本假設 41
3.3.2 流場模型簡介 42
3.3.3 邊界與初始條件 43
3.3.4 軟體設定細節 44
3.3.5 實驗設備與架構 47
3.4 PECVD系統的電漿噴流下游模型 49
3.4.1 模擬流場基本假設 49
3.4.2 流場模型簡介 50
3.4.3 邊界與初始條件 53
3.4.4 軟體設定細節 54
第四章 結果與討論 55
4.1 Fluent與COMSOL模擬熱流場的結果比較 55
4.2 PECVD腔體內部流場變化之研究 61
4.3 常壓氮氣噴流式電漿的放光現象分析 66
4.3.1 電漿噴流下游區域放光強度變化 66
4.3.2 電漿噴流下游區域流線變化 70
4.4 PECVD系統的電漿噴流下游氣流變化之研究 73
4.4.1 電漿噴流下游區域流線變化 73
4.4.2 電漿噴流下游區域之放光強度以及化學物種研究 75
第五章 結論與未來展望 78
5.1 結論 78
5.2 未來展望 79
第六章 參考資料 80

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