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研究生:彭志誠
研究生(外文):Chih-Cheng Peng
論文名稱:過渡性金屬硫屬化合物二硫化鉬鈮之晶體成長與特性研究
論文名稱(外文):Crystal Growth and Characterization of Mo1-xNbxS2 Transition Metal Dichalcogenide
指導教授:黃鶯聲何清華何清華引用關係
指導教授(外文):Ying-Sheng HuangChing-Hwa Ho
口試委員:黃鶯聲何清華
口試委員(外文):Ying-Sheng HuangChing-Hwa Ho
口試日期:2014-06-16
學位類別:碩士
校院名稱:國立臺灣科技大學
系所名稱:電子工程系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2014
畢業學年度:102
語文別:中文
論文頁數:66
中文關鍵詞:X光繞射拉曼散射電傳導特性2H-3R相轉變半導體-金屬行為轉變二硫化鉬鈮
外文關鍵詞:2H-3R transitionSemiconductor-metal transitionMo1-xNbxS2
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本論文以化學汽相傳導法(Chemical vapor transport method),利用碘(Iodine)當作傳導劑成長出Mo1-xNbxS2(0 ≤ x ≤ 1)共21種系列成分化合物之單晶,並對其系列化合物進行相關特性之研究。
其晶體尺寸最大則達到1.5 × 1.5 cm2左右。以六方晶系為單位晶胞,觀察出二硫化鉬屬於2H結構,而二硫化鈮為3R結構。並隨著鈮成分含量愈多,其化合物之晶格常數a有變大趨勢,而晶格常數c有減少趨勢,造成各成分之晶胞體積亦隨之變大。藉由拉曼極化分析於基平面上的拉曼振動模態中觀察出2H與的E2g1、A1g 與3R相的E(TO)、A1(LO)皆存在於Mo1-xNbxS2當中,呈現二次多項式關係的變化趨勢,並且隨著金屬鉬取代鈮的比例增加,振動模態皆往低頻率方向位移,推估是原子間的振動力學常數變小所導致的。
從電傳導特性指出,隨著鈮成分含量愈多,其化合物的導電度呈線性遞增趨勢。同時在20 K~290 K溫度環境下觀察出半導體特性的二硫化鉬,到金屬特性的二硫化鈮之間隨溫度變化的趨勢,同時找出其在Mo0.9Nb0.1S2為半導體轉金屬特性的起始成分化合物。
Single crystals of Mo1-xNbxS2 have been grown by chemical vapor transport method using Iodine as a transport agent. These series platelets up to 1.5×1.5 cm2 surface area and 0.2~0.3 cm in thickness be obtained. X-ray diffraction patterns show two-layered hexagonal primitive unit cell (2H) for molybdenum disulfide and three-layered rhombohedral primitive unit cell (3R) for niobium disulfide. The effect for all niobium-doped samples are an increase in lattice a and a decrease in lattice c, which led to a increase of the cell volumes. The co-existence on basal plane for both 2H-type and 3R-type vibration active-mode were observed by polarization dependent Raman scattering. With substituted Nb concentration increase, all vibration active-mode of series compounds are shifting to low-frequency, which reveal parabolic relation.
Molybdenum disulfide belongs to semiconductor whereas niobium disulfide belongs to metallic compound. It is found that linear trend of conductivity due to doped-Nb concentration increase. Temperature dependent resistivity for each compound shows the progress of semiconductor-metal transition. The critical composition happened on x ≈ 0.1 to transfer from semiconductor to metallic characteristic.
中文摘要 I
AbstractII
誌謝 III
圖索引 VI
表索引 IX
第一章 緒論 1
1.1 研究背景 1
1.1.1 二維奈米材料 1
1.1.2 過渡性金屬硫屬化合物 2
1.2 研究主題與方法 5
第二章 晶體成長與結構分析 6
2-1 Mo1-xNbxS2成長之系統配置 6
2.1.1 真空系統 6
2.1.2 長晶反應系統 6
2-2 Mo1-xNbxS2晶體成長之流程 10
2.2.1 原料所需與相關清洗劑 10
2.2.2 石英管清洗作業 12
2.2.3 化合物之初步合成 13
2.2.4 化學汽相傳導法之單晶成長 16
2-3 晶體形貌 18
2-4 X-ray晶格繞射 20
2.4.1 原理與系統 20
2.4.2 粉末X-ray晶格繞射分析 23
2.4.3 結果與討論 30
第三章 量測分析與系統 32
3-1 拉曼散射 32
3.1.1 原理簡介 32
3.1.2 極化分析 34
3.1.3 實驗方法 36
3.1.4 結果與討論 38
3-2 電傳導特性 52
3.2.1 電性量測介紹 52
3.2.2 接點樣品製備 54
3.2.3 實驗方法 54
3.2.4 結果與討論 56
第四章 結論 62
參考文獻 63
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