參考文獻
[1]H. J. Round, "A note on carborundum," Electrical world, vol. 49, p. 309, 1907.
[2]T. Moriguchi, Y. Noguchi, K. Sakano, and Y. Shimizu, "Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material," ed: Google Patents, 1999.
[3]E. F. Schubert, Light-Emitting Diodes, 2 ed.: Cambridge University Press Cambridge, 2006.
[4]C.-H. Wang, C.-H. Chiu, C.-C. Ke, H.-C. Kuo, T.-C. Lu, and S.-C. Wang, "Internal Quantum Efficiency Measurement in InGaN/GaN UV LEDs with Patterned Sapphire Substrate by Photoluminescence and Electroluminescence Method," 2010, p. JTuD31.
[5]B. Sun, L. Zhao, T. Wei, X. Yi, Z. Liu, G. Wang, et al., "Shape designing for light extraction enhancement bulk-GaN light-emitting diodes," Journal of Applied Physics, vol. 113, pp. 243104-243104-6, 2013.
[6]H. Kim, S.-N. Lee, and J. Cho, "Electrical and optical characterization of GaN-based light-emitting diodes fabricated with top-emission and flip-chip structures," Materials Science in Semiconductor Processing, vol. 13, pp. 180-184, 9// 2010.
[7]Z. Yin, X. Liu, Y. Wu, X. Hao, and X. Xu, "Enhancement of light extraction in GaN-based light-emitting diodes using rough beveled ZnO nanocone arrays," Optics Express, vol. 20, pp. 1013-1021, 2012.
[8]H. Kim, S.-N. Lee, Y. Park, K.-K. Kim, J. S. Kwak, and T.-Y. Seong, "Light extraction enhancement of GaN-based light emitting diodes using MgF2/Al omnidirectional reflectors," Journal of Applied Physics, vol. 104, p. 053111, 2008.
[9]H. Chen, H. Guo, P. Zhang, X. Zhang, H. Liu, S. Wang, et al., "Enhanced performance of GaN-based light-emitting diodes by using Al mirror and atomic layer deposition-TiO2/Al2O3 distributed Bragg reflector backside reflector with patterned sapphire substrate," Applied Physics Express, vol. 6, p. 022101, 2013.
[10]張靜宜, "側向磊晶技術成長氮化鎵之研究," 2005.
[11]C. Chia-Ta, H. Shih-Kuang, E.-Y. Chang, H. Yu-Lin, H. Jui-Chien, L. Chung-Yu, et al., "460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer Spacing," Photonics Technology Letters, IEEE, vol. 21, pp. 1366-1368, 2009.
[12]C. Ching-Hsueh, H. Lung-Hsing, L. Chia-Yu, L. Chien-Chung, L. Bo-Wen, T. Shang-Ju, et al., "Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates," Photonics Technology Letters, IEEE, vol. 24, pp. 1212-1214, 2012.
[13]L. Jae-Hoon, D.-Y. Lee, O. Bang-Won, and L. Jung-Hee, "Comparison of InGaN-Based LEDs Grown on Conventional Sapphire and Cone-Shape-Patterned Sapphire Substrate," Electron Devices, IEEE Transactions on, vol. 57, pp. 157-163, 2010.
[14]H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G. Wang, "Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale," Journal of Applied Physics, vol. 103, pp. 014314-014314-5, 2008.
[15]K.-C. Shen, D.-S. Wuu, C.-C. Shen, S.-L. Ou, and R.-H. Horng, "Surface modification on wet-etched patterned sapphire substrates using plasma treatments for improved GaN crystal quality and LED performance," Journal of the Electrochemical Society, vol. 158, pp. H988-H993, 2011.
[16]張博揚, "濕蝕刻圖案化藍寶石基板對氮化鎵發光二極體特性影響之研究," 長庚大學, 2008.
[17]Y. J. Lee, H. C. Kuo, T. C. Lu, B. J. Su, and S. C. Wang, "Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates," Journal of the Electrochemical Society, vol. 153, pp. G1106-G1111, 2006.
[18]S. Y. Chou, P. R. Krauss, and P. J. Renstrom, "Nanoimprint lithography," Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures, vol. 14, pp. 4129-4133, 1996.
[19]J.-K. Huang, D.-W. Lin, M.-H. Shih, K.-Y. Lee, J.-R. Chen, H.-W. Huang, et al., "Investigation and Comparison of the GaN-Based Light-Emitting Diodes Grown on High Aspect Ratio Nano-Cone and General Micro-Cone Patterned Sapphire Substrate," Journal of Display Technology, vol. 9, pp. 947-952, 2013.
[20]Y.-K. Su, J.-J. Chen, C.-L. Lin, S.-M. Chen, W.-L. Li, and C.-C. Kao, "Pattern-size dependence of characteristics of nitride-based LEDs grown on patterned sapphire substrates," Journal of Crystal Growth, vol. 311, pp. 2973-2976, 2009.
[21]T. Kondo, T. Kitano, A. Suzuki, M. Mori, K. Naniwae, S. Kamiyama, et al., "Advantages of the moth‐eye patterned sapphire substrate for the high performance nitride based LEDs," physica status solidi (c), vol. 11, pp. 771-774, 2014.
[22]李程程, 徐智谋, 孙堂友, 王智浩, 王双保, 张学明, et al., "GaN 基 LED 图形衬底的性能研究," 无机材料学报, vol. 28, pp. 869-874, 2013.
[23]L. Kirste, K. Kohler, M. Maier, M. Kunzer, M. Maier, and J. Wagner, "SIMS depth profiling of Mg back-diffusion in (AlGaIn) N light-emitting diodes," Journal of Materials Science: Materials in Electronics, vol. 19, pp. 176-181, 2008.
[24]F. Stevie, P. Maheshwari, J. Pierce, B. Adekore, and D. Griffis, "SIMS analysis of zinc oxide LED structures: quantification and analysis issues," Surface and Interface Analysis, vol. 45, pp. 352-355, 2013.
[25]P. Davidovits, "Scanning laser microscope," Nature, vol. 223, p. 831, 1969.
[26]C. Griffin, E. Gu, H. W. Choi, C. W. Jeon, J. M. Girkin, M. D. Dawson, et al., "Beam divergence measurements of InGaN/GaN micro-array light-emitting diodes using confocal microscopy," Applied Physics Letters, vol. 86, pp. 041111-3, 01/24/ 2005.
[27]L. Kuna, C. Sommer, E. Zinterl, F. Wenzl, P. Pachler, P. Hartmann, et al., "Confocal microscopy as a tool for the study of the emission characteristics of high-power LEDs," Applied Physics B, vol. 91, pp. 571-577, 2008.
[28]K. Lee, H. Lee, C.-R. Lee, J. S. Kim, J. H. Lee, M.-Y. Ryu, et al., "Spatial emission distribution of InGaN/GaN light-emitting diodes depending on the pattern structures," Materials Research Bulletin, 2014.
[29]徐才竣, "以光學顯微鏡量測熱效應對發光二極體之影響," 2009.
[30]林誠謙, "蒙地卡羅法簡介," 物理雙月刊, vol. 11, pp. 163-176, 1989.[31]曾少澤, "次微米光柵結構於發光二極體表面之研究; A study of light-emitting diodes featuring submicron gratings," 2009.
[32]李宗憲, "氮化鎵發光二極體之光萃取效率分析與晶片設計," 中央大學光電科學研究所學位論文, pp. 1-117, 2008.
[33]Y.-H. Huang, "Measurement of Light Emitting Diodes grown on Pattern Sapphire Substrate by Optical Microscopy," 2013.
[34]X. Guo and E. Schubert, "Current crowding in GaN/InGaN light emitting diodes on insulating substrates," Journal of Applied Physics, vol. 90, pp. 4191-4195, 2001.
[35]Y.-K. Kuo, J.-Y. Chang, and M.-C. Tsai, "Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer," Optics letters, vol. 35, pp. 3285-3287, 2010.
[36]S.-J. Chang, C. Chang, Y.-K. Su, R. Chuang, Y. Lin, S.-C. Shei, et al., "Highly reliable nitride-based LEDs with SPS+ ITO upper contacts," Quantum Electronics, IEEE Journal of, vol. 39, pp. 1439-1443, 2003.