|
[1]N. Holonyak, Jr., and S. F. Bevaqua, ―Coherent(visible) Light Emission From Ga(As1–xPx) Junctions,‖ Appl. Phys. Lett. 1, 82-83 (1962). [2]J. W. Allen, M. E. Moncaster, and J. Starkiewicz, “Electroluminescent devices using carrier injection in gallium phosphide,” Solid-State Electron. 6, 95-102 (1963). [3]H. G. Grimmeiss and H. J. Scholz, “Efficiency of recombination radiation in GaP,” Phys. Lett. 8, 233-235 (1964). [4]Zukauskas, M. S. Shur, and R. Caska, Introduction to Solid-state Lighting (John Wiley & Sons, New York, 2002). [5]P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, “High performance AlInGaP visible light emitting diodes,” Appl. Phys. Lett. 57, 2937-2939 (1990). [6]H. Sugawara, M. Ishikawa, and G. Hatakoshi, “High-efficiency InAlGaP/GaAs visible light-emitting diodes,” Appl. Phys. Lett. 58, 1010-1012 (1991). [7]H. Amano, N. Sawaki, I. Akasaki, and T. Toyoda, “Metal organic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer,” Appl. Phys. Lett. 48, 353-355 (1986). [8]Y. Koide, N. Itoh, K. Itoh, N. Sawaki, and I. Akasaki, “Effect of AlN buffer layer on AlGaN/a-Al2O3 heterepitaxial growth by metal organic vapor phase epitaxy,” Jpn. J. Appl. Phys. 27, 1156-1161 (1988). [9]S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, “Thermal annealing effects on p-type Mg-doped GaN films,” Jpn. J. Appl. Phys. 31, L139-L142 (1992). [10]S. Nakamura, T. Mukai, and M. Senoh, “High-brightness InGaN/AlGaN double- heterostructure blue-green-light-emitting diodes,” J. Appl. Phys. 76, 8180-8191 (1994). [11]S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, “Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes,” Jpn. J. Appl. Phys. 34, L1332-L1335 (1995). [12]Y. Shimizu, K. Sakano, Y. Noguchi, and T. Moriguchi, “Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material” United States Patent, US 5998925 (1999). [13]http://www.eere.energy.gov/,美國能源局。 56
[14]林正峰,光學講義“Radiometry and Photometry” [15]ASAP 波動光學、散射和輻射度分析。 [16]Eugene Hecht, Optics, fourth edition, pp. 111~121, 2007. [17]E. F. Schubert, Light-Emitting Diodes, 2nd ed. (Cambridge University Press, Cambridge, 2006). [18]J. I. Shim, “ Design and Characterization Issues in GaN-based Light Emitting Diodes”Optoelectronic Materials and Devices III, Proc. of SPIE Vol. 7135 71350C-1. [19]M. K. Lee, C. L. Ho, and P. C. Chen, “ Light Extraction Efficiency Enhancement of GaN Blue LED by Liquid-Phase-Deposited ZnO Rods” , Photonics Technology Letters, IEEE. [20]H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, G. Wang, F. Yang , “ Improvement of GaN-based light emitting diodes performance grown onsapphire substrates patterned by wet etching” Proc. of SPIE Vol. 6841 684107-1. [21]P. Wang, B. Cao, Z. Gan, S. Liu, “Analysis of light extraction efficiency of GaN-based light-emitting diodes “2011 J. Phys.: Conf. Ser. 276 012083. [22]A.L. Henneghien, G. Tourbot, B. Daudin, “Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers” Optics Express, Vol. 19, Issue 2, pp. 527-539 (2011). [23]M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Carford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” IEEE J. Disp. Tech. 3, 160-175 (2007). [24]S. Han, J. Y. Kim, S. I. Na, S. H. Kim, K. D. Lee, B. Kim, and S. J. Park, “Improvement of light extraction efficiency of flip-chip light-emitting diode by texturing the bottom side surface of sapphire substrate,” IEEE Photo. Tech. Lett. 18, 1406-1408 (2006). [25]劉智揚,“非球面微結構之多功能光學膜的設計”,南台科技大學光電工程 研究所碩士論文,民國100年。 [26]Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, “Photonic Crystal LEDs – designing light extraction,” Laser & Photon. Rev. 3, 262-286 (2009). [27]Z. Ting and T. C. McGill, “Monte Carlo simulation of light-emitting diode light- extraction characteristics,” Opt. Eng. 34, 3545-3553 (1995). [28]S. J. Lee, “Analysis of light-emitting diode by Monte Carlo photo simulation,” Appl. Opt. 40, 1427-1437 (2001). 57
[29]C. C. Sun ., T. X. Lee, Y. C. Lo, “Light extraction enhancement of GaN-based LEDs through passive/active photon recycling” Optics Communications, Volume 284, Issue 20, p. 4862-4868. [30]Stefanov, B. S. Shelton, H. S. Venugopalan, “Optimizing the external light extraction of nitride LEDs” Proceedings of SPIE Vol. 4776.
|