臺灣博碩士論文加值系統

導電性高分子複合材料具有輕量化、耐腐蝕及優異的加工性，因此成為光、電、磁等特性應用研究之重點。本研究之目的是發展具導電性的同排聚丙烯/奈米銅線奈米複合材料，備製時以氯化銅為前驅物、十六烷基胺(HDA)為保護劑及葡萄糖為還原劑，採用化學還原法合成奈米銅線，應用紫外光/可見光譜儀和掃描式電子顯微鏡分析純化後奈米銅線之可見光吸收峰值和纖維形態，再以溶液混摻法製備同排聚丙烯/奈米銅線複合材料，應用熱示差掃描卡量計、掃描式電子顯微鏡、X光繞射儀和高電阻測試儀進行分析，再以所測得體積電阻率代入Power law equation計算出複合材料之導電閥值濃度。本研究製備之最佳奈米銅線數據之直徑為66±16 nm 和長度為32±12μm，添加1.25 vol%奈米銅線之同排聚丙烯/奈米銅線複合材料可使體積電阻率從5.44 x 10^14 Ω‧cm降低到4.03 x 10^6 Ω‧cm透過Power law equation: ρ = ρo ( V – Vc )^(-t)計算導電閥值濃度(Vc)為0.237 vol%。本研究製備之奈米銅線其直徑小於100 nm，符合一維奈米材料規格，且同排聚丙烯/奈米銅線複合材料之表面電阻率為2.70 x 10^8 Ω/sq，適合靜電消散型複合材料(電阻範圍為10^5-10^9 Ω/sq)之應用。

In recent years, synthesis of copper nanowires has been attracting many attentions because of their high cost/performance ratio. Polymer composites possessed the advantages of light weight, corrosion resistance and processability while preserving conductive. The object of this study is to investigate the electrical properties of isotactic polypropylene/copper nanowires (i-PP/CuNWs). CuNWs were prepared by chemical reduction of CuCl2 and using the hexadecylamine (HDA) as a capping agent. Conductive i-PP/CuNWs composites were prepared by solution blending. The light absorbance and the morphology of CuNWs were characterized by UV-visible spectrophotometry and SEM. To find the percolation threshold concentration, the fit of the electrical resistivity data with the power law equation: ρ = ρo (V – Vc)^(-t) based on the percolation theory was used. The diameters of the copper nanowires are between 50 to 100 nm which can be seen as 1-D nanomaterials. A low percolation threshold value of 0.237 vol% for i-PP/CuNWs composites were obtained.

目錄

摘要 i
Abstract ii
誌謝 iii
目錄 iv
圖目錄 viii
表目錄 ix
第一章 緒論 1
1.1 研究動機 1
1.2 研究目的 2
第二章 文獻回顧 3
2.1 奈米材料介紹 3
2.2 奈米材料類別 3
2.2.1 奈米材料結構 4
2.2.1.1 零維奈米材料 4
2.2.1.2 一維奈米材料 4
2.2.1.3 二維奈米材料 5
2.2.1.4 三維奈米材料 5
2.2.2 奈米材料合成方法 6
2.2.2.1 物理合成方法 6
2.2.2.2 化學合成方法 6
2.3 奈米銅線 6
2.3.1 奈米銅線性質 7
2.3.2 奈米銅線合成 7
2.3.2.1 銅前驅物與pH值關係 8
2.3.2.2 保護劑 8
2.3.2.3 還原方法與還原劑 8
2.3.2.4.1化學還原法 10
2.3.2.4.2 電化學沉積法 10
2.3.2.4.3 水熱還原法 11
2.3.2.4.4 同步輻射X光還原法 11
2.4 奈米銅線複合材料應用 12
2.4.1 聚苯乙烯/奈米銅線 12
2.4.2 聚對苯二甲酸乙二酯/奈米銅線 13
2.4.3 聚丙烯/奈米銅線 14
2.5導電特性之奈米銅線複合材料 14
2.5.1 導電閥值理論 14
2.5.2 導電閥值濃度計算 15
2.5.3 導電閥值與L/D比之關係 16
第三章 實驗材料及方法 17
3.1 實驗藥品 17
3.2 實驗器材 18
3.3 實驗架構 19
3.4 實驗流程 20
3.4.1 奈米銅線之製備與清洗 20
3.4.2 同排聚丙烯/奈米銅線複合材料之製備 20
3.5 實驗分析 22
3.5.1 奈米銅線之紫外光/可見光光譜檢測 22
3.5.2 奈米銅線之OM觀察及Image J量測長度 22
3.5.3 奈米銅線之SEM觀察 23
3.5.4 奈米銅線/聚丙烯之偏光顯微鏡觀察 24
3.5.5　同排聚丙烯/奈米銅線複合材料之SEM觀察 24
3.5.6 同排聚丙烯/奈米銅線複合材料之XRD檢測 24
3.5.7　同排聚丙烯/奈米銅線複合材料之DSC測量 25
3.5.8　同排聚丙烯/奈米銅線複合材料之體積電阻率 25
第四章 結果與討論 26
4.1 合成奈米銅線之探討與分析 26
4.1.1 奈米銅溶液之UV-Visible鑑定 26
4.1.2 預熱攪拌對合成奈米銅線影響 27
4.1.3 酸鹼值對合成奈米銅線之影響 28
4.1.4 保護劑HDA含量對合成奈米銅線之形態影響 29
4.1.5 奈米銅線之可見光吸收波長與直徑關係 32
4.1.6 批次量放大效應對合成奈米銅線產率影響 33
4.1.7 保護劑的選擇對合成奈米銅之形態影響 34
4.1.8 溶劑對奈米銅線之分散影響 35
4.1.9 奈米銅線/界面活性劑(PEG-7)/water系統之相圖 36
4.2 同排聚丙烯/奈米銅線之複合材料鑑定與分析 38
4.2.1 奈米銅線誘導同排聚丙烯穿晶 38
4.2.2 掃描式電子顯微鏡(SEM)觀察 39
4.2.3 熱示差掃描卡量計 (DSC)分析 41
4.2.4 奈米銅線之X光繞射儀(XRD)分析 42
4.2.5 體積電阻率測試 43
4.2.6 導電閥值濃度計算分析 44
第五章 結論 46
參考文獻 48

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