透明導電膜擁有良好的光電特性，能夠應用在光電領域上。本實驗研究利用射頻磁控濺鍍方式濺鍍氧化鋅鋁靶材，在玻璃基板上沉積摻雜鋁之氧化鋅透明導電薄膜。並且以氫電漿蝕刻系統中進行表面改質，藉以提升透明導電膜之光電特性。
因為在製程中升溫的AZO薄膜雖然特性較佳，但也因結構較強，導致後續蝕刻上會有些許的困難，所以希望能先以常溫製程後再接續作電漿後處理，讓AZO薄膜於常溫及升溫後的特性相差不大。從實驗結果可以發現在製程中直接升溫所得到特性與常溫下沉積後進行氫電漿處理之特性差異性不大。在製程時將溫度提升至400℃可獲得平坦度2.01 nm，電阻率4.76×10-3 Ω-cm ，可見光平均穿透率93.4%之透明導電薄膜。氫電漿處理後之常溫沉積AZO薄膜可獲得平坦度2.10 nm，電阻率5.73×10-3 Ω-cm ，可見光平均穿透率91.6%之透明導電薄膜，兩者相較下差異之百分比為平坦度2.19%，電阻率9.25%，穿透率0.97%。

The transparent conducting film possesses excellent opto-electronic properties which can be applied to opto-electronic field. In this study, The aluminum-dope zinc oxide (AZO) film were to deposit on glass substrate by RF magnetron sputtering. Opto-electronic characteristics of the AZO film were improved by surface treatment under the hydrogen plasma.
Although the AZO film deposited at higher substrate temperature possesses better quality, however the densed film is haed to etch the tough structure owing to the better film quality. From the experimental results, we can find the quality of film deposited at higher substrate temperature is similar to that of film deposited at room temperature with hydrogen plasma treatment. The AZO film deposited at 400℃ possesses surface roughness of 2.01 nm, resistivity of 4.76×10-3 Ω-cm and average visible light transmittance of 93.4%. The AZO film deposited at room temperature with hydrogen plasma post-treatment possesses surface roughness of 2.10 nm, resistivity of 5.73×10-3 Ω-cm and average visible light transmittance of 91.6%. The difference of opto-electronic properties between the above two films is very little.

致謝I
摘要 II
AbstractIII
目錄IV
圖目錄VII
表目錄XI
第一章 緖論
1-1研究背景1
1-2研究目的2
第二章 基本原理
2-1透明導電膜3
2-11 材料特性的介紹3
2-12 氧化鋅晶體結構3
2-13 透明導電膜光學性質5
2-14 透明導電膜電學性質7
2-2 AZO透明導電膜11
2-21 AZO透明導電膜介紹11
2-3 薄膜製作技術13
第三章 實驗製程與量測
3-1 基板準備15
3-1-1 實驗流程圖15
3-1-2 射頻磁控濺鍍法16
3-2 Eagle 2000玻璃基板19
3-3 霍爾電性測量20
3-4 X-Ray 繞射基本理論23
3-5 紫外線可見光光譜儀分析25
3-6 α-step表面紋理分析儀26
3-7 原子力顯微鏡26
3-8 掃瞄式電子顯微鏡28
3-9 電漿處理系統29
第四章結果與討論
4-1 常溫及升溫之AZO薄膜之特性32
4-1-1 AZO薄膜電性分析33
4-1-2 AZO薄膜光學特性分析34
4-1-3 AZO薄膜表面結構分析35
4-2 改變射頻功率、處理時間及氣體流量對AZO薄膜特性之影響…37
4-2-1 改變射頻功率、處理時間及氣體流量之AZO薄膜電性分析38
4-2-2 改變射頻功率、處理時間及氣體流量之AZO薄膜光學特性分析39
4-2-3 改變射頻功率、處理時間及氣體流量之AZO薄膜表面結構分析41
4-3 以電漿處理對升溫沉積之AZO薄膜進行表面改質50
4-3-1 以電漿最佳參數處理升溫之AZO薄膜電性分析50
4-3-2 以電漿處理升溫沉積之AZO薄膜光性分析51
4-3-3 以電漿處理升溫沉積之AZO薄膜表面結構分析52
第五章 結論與未來展望
5-1 結論54
5-2 未來展望56
參考文獻57

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