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研究生:江玟聰
研究生(外文):WEN-TSUNG CHIANG
論文名稱:透過選區成長奈米碳螺旋線圈以製作場發射陣列
論文名稱(外文):Fabrication of field emission array by the selective growth of carbon nanocoils
指導教授:施文欽
指導教授(外文):Wen-Ching Shih
口試委員:施文欽
口試委員(外文):Wen-Ching Shih
口試日期:2014-07-15
學位類別:碩士
校院名稱:大同大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2014
畢業學年度:102
語文別:中文
論文頁數:114
中文關鍵詞:奈米碳螺旋線圈場發射
外文關鍵詞:carbon nanocoilsfield emission
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本論文主要有四個部份,首先利用直流濺鍍機台在矽基板上濺鍍ITO-Fe催化薄膜,再利用熱化學氣相沉積法成長奈米碳螺旋線圈,等溫度升到製程溫度時通入乙炔與氬氣成長奈米碳螺旋線圈,藉由實驗參數的控制,我們可以改變奈米碳螺旋線圈的形貌和品質,而場發射特性也隨著奈米碳螺旋線圈的形貌和品質之改變而有所不同。在二極式的架構下,陽極和陰極的間隙約為275 μm,我們在0.43 V/μm電場強度下可獲得9.15 uA/cm2的電流密度
  為了要成長奈米碳螺旋線圈於三極式場發射元件上,藉由黃光室的旋轉塗佈、曝光顯影等定義出陣列孔洞的步驟,再成功地利用電漿處理系統除掉鉬層、濕蝕刻的幫助下去除二氧化矽層和可選擇性深度的矽基板孔洞,然後在Mo/SiO2/Si之FEA結構中的陣列孔洞內成長奈米碳螺旋線圈。
This thesis has four parts. The first part is to use the DC sputtering to deposit the ITO-Fe catalytic film on Si substrate. And then we use thermal chemical vapor deposition to grow the carbon nanocoils by flowing the C2H2 and Ar in the furnace tube. We can change the morphology and quality of the carbon nanocoils by controlling the experimental parameters. The electron field emission properties can also be varied by the morphology and quality of the carbon nanocoils. We can acquire the current density of 9.15 uA/cm2 at the electric field intensity of 0.43 V/μm under the diode structure with the spacing between the cathode and anode of 275 μm.
The goal of this study is to grow the carbon nanocoils on the triode-type field emission devices. We use the photolithographic technique (spin coating、exposure and development) to define the holes of the field emission array. The Mo layer was removed by the plasma treatment. The SiO2 layer was removed by the wet chemical etching and the holes with selective depth were formed on Si substrate. Finally, we grow the carbon nanocoils on the holes of the field emission array with triode –type structure on Mo/SiO2/Si substrate.
致謝I
摘要II
AbstractIII
表目錄 VII
圖目錄 IX
第一章 緒論1
1.1 電子場發射理論1
1.2 顯示器簡介6
1.2.1以SPINDT做為陰極場發射源9
1.2.2 以奈米碳螺旋線圈做為陰極場發射源10
1.3 場發射燈源介紹 10
1.3.1 平面式場發射燈源 11
1.3.2 燈管式場發射燈源 12
1.3.3 場發射燈源的優勢13
1.4 研究動機 16
第二章 奈米碳螺旋線圈的性質及應用19
2.1 奈米碳材料發展簡介19
2.1.1 奈米碳螺旋線圈之發展簡介 19
2.1.2 奈米碳螺旋線圈之成長機制 23
2.1.3 觸媒製備方法 28
2.1.3.1 物理法 28
2.1.3.2 化學法 30
2.1.4 奈米碳螺旋線圈製備方法 32
2.1.4.1 熱裂解化學氣相沈積法 32
2.2 特殊性質及應用潛力33
第三章 實驗流程與儀器簡介 36
3.1 實驗流程36
3.2 ITO薄膜濺鍍沉積系統37
3.3 金屬濺鍍系統38
 3.4 電漿蝕刻處理系統 39
 3.5 BOE與KOH濕式蝕刻41
 3.6 陣列孔洞矽基板之製作 43
 3.7 熱化學汽相沉積系統 47
 3.8 研究分析設備 50
   3.8.1電子場發量測系統50
   3.8.2 場發射掃描式電子顯微鏡 51
第四章 結果與討論52
 4.1 ITO與Fe催化劑之製作53
   4.1.1 沉積ITO薄膜之厚度線性資料建立53
   4.1.2 沉積Fe薄膜之厚度線性資料建立 54
 4.2以ITO-Fe催化劑成長奈米碳螺旋線圈 56
   4.2.1 不同製程溫度對奈米碳螺旋線圈之影響 56
   4.2.1.1 在660℃下不同製程時間對奈米碳螺旋線圈之影響62
   4.2.1.2 在660℃下不同乙炔通量對奈米碳螺旋線圈之影響64
   4.2.1.3 在680℃下不同製程時間對奈米碳螺旋線圈之影響68
   4.2.1.4 在680℃下不同乙炔通量對奈米碳螺旋線圈之影響72
   4.2.1.5 在700℃下不同製程時間對奈米碳螺旋線圈之影響76
   4.2.1.6 在700℃下不同乙炔通量對奈米碳螺旋線圈之影響80
 4.3 以最佳條件選區成長奈米碳螺旋線圈84
4.3.1金屬鉬之濺鍍參數84
4.3.2 BOE與KOH之蝕刻參數86
4.3.3 在U型槽裡成長奈米碳螺旋線圈90
第五章 結論及未來展望93
參考文獻94
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[32]Lab2 二氧化矽(SiO2)遮罩蝕刻 - 國立高雄第一科技大學機械系 余志成 c 2007
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