臺灣博碩士論文加值系統

　本實驗室利用直流磁控濺鍍系統沉積的氧化鋅薄膜電晶體，其半導體缺陷多，電晶體臨界電壓為-13.65V，次臨界擺幅為2.8V，並不適用於低功耗要求，因此提出藉由摻雜方式改善電晶體特性。我們採用直流磁控濺鍍系統沉積氮化鋅前驅物並利用爐管退火的方式形成氮摻雜氧化鋅作為薄膜電晶體主動層探討氮摻雜氧化鋅氧化鋅薄膜電晶體元件特性的影響，藉由不同的退火溫度和條件觀察不同的氮含量所占氧化鋅的成分比例。薄膜電晶體電性結果得到以300度70分鐘的結果較佳，可改善臨界電壓至-8.5V及次臨界擺幅為2.3V/decade，元件電流開關比維持在~106。

Our group had developed a Zinc Oxide thin-film transistor with zinc oxide thin film transistors with poor electrical characteristics, transistor threshold voltage-13.65V and subthreshold swing of 2.8V/decade, which was not appropriate for low power consumption condition. Therefore, we introduce the zinc oxide with doping to improve its poor electrical characteristics. We proposed zinc nitride as precursor, deposited by DC magnetron sputtering system, formed zinc oxide doped nitrogen as TFT active layer by furnace annealing. One of the annealing condition shows that the precursor annealed under 300 degrees in 70 minutes improve the TFT characteristics, which gives transistor threshold voltage -8.5V and subthreshold swing of 2.2V/decade.

Acknowledge I
Abstract II
Table of contents III
Chapter 1 Introduction 1
1.1　Introduction 1
1.2　Motivation 2
1.3　Outline 4
Chapter 2 Basic Theory 5
2.1　Thin Film Transistor 5
2.2　ZnO Intrinsic Defects 9
2.3　Nitrogen Doped ZnO 10
Chapter 3 Experiment 11
3.1　Instruments 11
3.2　Experiment Procedure 13
Chapter 4 Results and Discussion 16
4.1　TFT 16
4.2　Precursor Annealing 16
4.3　Annealing Parameters Adjustment 24
4.4　TFT Measurement 30
Chapter 5 Conclusion 44
References 46

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