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研究生:鄭博升
研究生(外文):Bo-sheng Zheng
論文名稱:矽含量對氧化鉿之影響
論文名稱(外文):Effect of Si content on Hafnium oxide
指導教授:林烱暐
指導教授(外文):Chiung-Wei Lin
口試委員:林烱暐
口試委員(外文):Chiung-Wei Lin
口試日期:2014-07-22
學位類別:碩士
校院名稱:大同大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2014
畢業學年度:102
語文別:英文
論文頁數:39
中文關鍵詞:氧化鉿非晶矽鈍化氧化鉿矽
外文關鍵詞:Hafnium silicatea-Si PassivationHafnium oxide
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本實驗室開發了以氧化鉿為介電層的high-k材料,透過先成長不同厚度的非晶矽,再以RF磁控濺鍍系統方式成長氧化鉿,並透過爐管對薄膜進行退火處理,來進一步探討矽含量對氧化鉿薄膜之影響,經過熱處理的薄膜在傅式轉換紅外光光譜儀和X射線光電子能譜上都有發現氧化鉿矽之訊號,而在穿透式電子顯微鏡下更可發現薄膜結晶相的出現和不同厚度的氧化鉿矽,之後透過製備成MOS和MIM元件進行電性分析,最終在成長非晶矽10 nm厚度下得到一個高的介電常數值(25.5)和較低等校氧化層厚度(9.16 nm),並且從C-V特性曲線上驗證不同矽含量對界面的改善與MIM崩潰電場強弱的增加。
In this study, we developed a high-k hafnium oxide .First, amorphous silicon with different thickness were formed using PECVD , then hafnium oxide were formed using radio-frequency sputtering, After deposition, The sample were annealed in the furnace. we could find the signal of hafnium silicate by Fourier transform infrared spectrometer and X-ray photoelectron spectroscopy , and we could find the crystallization of hafnium oxide and different thickness of hafnium silicate by the transmission electron microscopy , then fabricated MIM and MOS device to measure electrical properties, Finally, we used the above analysis to verify a film with ten nm amorphous silicon has a high dielectric constant (25.5) and a low effective oxide thickness (9.16nm). From the electrical characteristics of C-V and MIM we could verify the interface was improvement and the breakdown voltage was not decreased by amorphous silicon passivation layer which with different thickness.
Chapter 1 Introduction
1.1 Introduction 1
1.2 Motivation 2
1.3 Architecture 3
Chapter 2 Theory 4
2.1 The basic theory of MOS 4
2.2 The traps in the silicon MOS 7
2.2.1 Interface trap charge 7
2.2.2 oxide traps and the work function difference 9
2.3 gate leakage current 11
2.3.1 Direct Tunnneling 11
2.3.2 Fowler-Nordheim Tunneling 12
2.3.3 thermionic emission 12
2.3.4 Frenkel-Poole Emission 12
2.4 Dielectric Breakdown 12
Chapter 3 Experiment 14
3.1 Experimental procedure 14
3.2 Experimental instruments 14
Chapter 4 Results and discussion 16
4.1 FTIR Analysis 16
4.2 XPS Analysis 18
4.3 TEM Analysis 22
4.4 HfO2 MOS Analysis 29
4.4.1 oxide capacitance C0 and EOT 29
4.4.2 MOS Hysteresis Analysis 33
4.5 HfO2 MIM Analysis 35
Chapter 5 Conclusion 37
References 38
[1] Hei Wong “Nano-CMOS Gate Dielectric Engineering” CRC Press Taylor & Francis Grop Boca Raton London New York 2012
[2] Hei Wong, Hiroshi Iwai “On the scaling issues and high-j replacement of ultrathin gate dielectrics for nanoscale MOS transistors” Microelectronic Engineering 83 (2006) 1867–1904
[3] C. W. Lin, Y. L. Chen“Reducing the effects of mismatch between zinc oxide and silicon by silane plasma modification” J Mater Sci: Mater Electron (2012) 23:1621–1627
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[5] G. M. Rignanese, X. Gonze, Gyuchang Jun, Kyeongjae Cho, Alfredo Pasquarello, “First-principles investigation of high-k dielectrics: Comparison between the silicates
and oxides of hafnium and zirconium ” Phys. Rev. B 69, 184301 (2004)
[6] X. Zhao, D. Vanderbilt“First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide” Phys. Rev. B 65, 233106
[7]T. C. Chen, C.Y. Peng, C. H. Tseng, M. H. Liao, C. M. Hsin, C. I.Wu, M. Y Chern, P. J. Tzeng, C. W. Liu,“Characterization of the Ultrathin HfO2 and Hf-Silicate Films Grown by Atomic Layer Deposition” Electron Devices, IEEE Transactions on Volume: 54 , Issue: 4
[8] M. Modreanu a, J. Sancho-Parramon, O. Durand , B. Servet , M. Stchakovsky ,C. Eypertc, C. Naudin , A. Knowles , F. Bridou , M.-F. Ravet,“Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films” Appl. Surf. Sci 253 (2006) 328–334
[9] L. Khomenkova, X. Portier, P. Marie, F. Gourbilleau“Hafnium silicate dielectrics fabricated by RF magnetron sputtering” J. Non-Cryst. Solids Volume 357, Issues 8–9, 15 April 2011, Pages 1860–1865
[10] Hei Wong, K. L. Ng, Nian Zhan, M. C. Poon, and C. W. Kok“Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen”J. Vac. Sci. Technol. B22, 1094 (2004)
[11] G. He, L. D. Zhang, and Q. Fang“Silicate layer formation at HfO2/SiO2/Si interface determined by x-ray photoelectron spectroscopy and infrared spectroscopy ”
J. Appl. Phys. 100, 083517 (2006);
[12] L Khomenkova, X Portier, J Cardin and F Gourbilleau “Thermal stability of high-k Si-rich HfO2 layers grown by RF magnetron sputtering ” Nanotechnology 21 (2010) 285707
[13] Fu-Chien Chiu “Interface characterization and carrier transportation in metal/ Hf O 2 /silicon structure ” J. Appl. Phys.100, 114102 (2006)
[14] Nian Zhan, M. C. Poon, C. W. Kok, K. L. Ng, and Hei Wongb, “XPS Study of the Thermal Instability of HfO2 Prepared by Hf Sputtering in Oxygen with RTA” J. Electrochem. Soc., 150 (10) F200-F202 (2003)
[15] K. Piskorski, H. M. Przewlocki “The methods to determine flat-band voltage VFB in semiconductor of a MOS structure ” MIPRO 2010, May 24-28, 2010, Opatija, Croatia
[16] Tingting Tan, Zhengtang Liu, Hongcheng Lu, Wenting Liu, Feng Yan “Chemical structure and electrical properties of sputtered HfO2 films on Si substrates annealed by rapid thermal annealing” Vacuum 83 (2009) 1155–1158
[17] A.G. Khairnar, A.M. Mahajan “Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology” Solid State Sciences 15 (2013) 24-28
[18] Hei Wong, B.L. Yang, Shurong Dong “Thermal and voltage instabilities of hafnium oxide films prepared by sputtering technique” Microelectronics Reliability 53 (2013) 1863–1867
[19] E. H. Nicollian, J. R. Brews “MOS (metal oxide semiconductor) physics and technology ” Wiley, 2003
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