臺灣博碩士論文加值系統

指導教授推薦書
口試委員審定書
致謝 iii
摘要 iv
Abstrsct v
Contents vi
Figure Caption ix
Table Caption xiv
Chatper 1 - 1 -
Introduction - 1 -
1.1 Background - 1 -
1.2 Motivation and Objective - 3 -
1.3 EIS and ISFET - 4 -
Chapter 2 - 6 -
Theory Description - 6 -
2.1 EIS structure - 6 -
2.2 Site binding model - 7 -
2.3 pH-ISFET operation mechanism - 11 -
Chapter 3 - 16 -
Physical and Electrical Properties of TbTaxOy/Si EIS structure - 16 -
3.1. Material - 16 -
3.2. The fabrication process of EIS sensor - 17 -
3.3. Physical Properties of sensing membrane - 18 -
3.3.1. XRD of TbTaxOy film analysis - 18 -
3.3.2. AFM of TbTaxOy film analysis - 18 -
3.3.3. Contact Angle of TbTaxOy - 19 -
3.3.4. Depth Profile of TbTaxOy - 20 -
3.4. Sensing characteristics of EIS structure - 20 -
3.4.1. Sensitivity of sensing membrane - 20 -
3.4.2. Drift of sensing membrane - 22 -
3.4.3. Hysteresis of sensing membrane - 23 -
Chapter 4 - 38 -
Physical and Electrical Properties of YbTaxOy/Si EIS structure - 38 -
4.1. Material - 38 -
4.2. The fabrication process of EIS sensor - 39 -
4.3. Physical Properties of sensing membrane - 40 -
4.3.1. XRD of YbTaxOy film analysis - 40 -
4.3.2. AFM of YbTaxOy film analysis - 40 -
4.3.3. Contact Angle of YbTaxOy - 41 -
4.3.4. Depth Profile of YbTaxOy - 42 -
4.4. Sensing characteristics of EIS structure - 42 -
4.4.1. Sensitivity of sensing membrane - 42 -
4.4.2. Drift of sensing membrane - 44 -
4.4.3. Hysteresis of sensing membrane - 45 -
Chapter 5 - 58 -
TbTaxOy/Si and TbTaxOy/Si EIS structure for biosensor applications - 58 -
5.1. Introduction - 58 -
5.2. Biosensor for EIS base glucose biosensor - 59 -
5.3. Experiment - 60 -
5.3.1. Regents - 60 -
5.3.2. Agarose - 60 -
5.3.3. Enzyme immobilization - 61 -
5.4.1. TbTaxOy EIS based glucose biosensor - 61 -
5.4.2. YbTaxOy EIS based glucose biosensor - 62 -
Chapter 6 - 71 -
Conclusions and Future Works - 71 -
6.1. Conclusions - 71 -
6.2. Future works - 72 -
Reference - 73 -


Fig. 1- 1 The picture shows the Schematic cross-section of the ISFET. - 5 -
Fig. 1- 2 Comparison of EIS and ISFET structures. - 5 -

Fig. 2- 1 Basic and multi-phase diagram of EIS structure. - 13 -
Fig. 2- 2 Typical C-V curves for electrolyte-SiO2-Si EIS structure. Silicon dioxide thickness is 560Å on a (100) 10Ω-cm p-type. - 13 -
Fig. 2- 3 Schematic representation of the site binding model. - 14 -
Fig. 2- 4 Experimental results of the surface potential ( ) on the SiO2 surface, using the theoretical parameters 〖pH〗_pzc=2.2, β=0.14, pK_a=5.7, pK_b=1.3, Ns=5×〖10〗^14 〖cm〗^2 and C_DL=20 μF/〖cm〗^2[10]. - 14 -
Fig. 2- 5 Experimental results of the threshold voltage variation of the Al2O3 gate ISFET, using the theoretical parameters 〖pH〗_pzc=8, β=4.8, pK_a=10, pK_b=-6, Ns=8×〖10〗^14 〖cm〗^2 and C_DL=20 μF/〖cm〗^2[10]. - 15 -

Fig. 3- 1 EIS structure with TbTaxOy sensing membrane. - 25 -
Fig. 3- 2 Flow chart of TbTaxOy EIS process. - 26 -
Fig. 3- 3 Photo of EIS device. - 27 -
Fig. 3- 4 XRD analysis of TbTaxOy films with RF sputter 120:80 W and different annealing temperatures - 27 -
Fig. 3- 5 XRD analysis of TbTaxOy films with RF sputter 120:120 W and different annealing temperatures - 28 -
Fig. 3- 6 XRD analysis of TbTaxOy films with RF sputter 120:160 W and different annealing temperatures - 28 -
Fig. 3- 7 3x3μm AFM three domain image of TbTaxOy 120:120 film with 900°С RTA(Rrms = 0.817 nm). - 29 -
Fig. 3- 8 Surface roughness of TbTaxOy sensing membrane with different RTA conditions. - 29 -
Fig. 3- 9 The contact angle θ_C. - 30 -
Fig. 3- 10 Contact angle of TbTaxOy 120:80 and RTA annealing temperature at 700°C. - 31 -
Fig. 3- 11 The depth profile of TbTaxOy 120:80 - 32 -
Fig. 3- 12 The depth profile of TbTaxOy 120:120 - 33 -
Fig. 3- 13 The depth profile of TbTaxOy 120:160 - 33 -
Fig. 3- 14 Photo of measuring C-V curve in pH6 buffer solution. - 34 -
Fig. 3- 15 C-V curves of TbTaxOy 120:120 EIS RTA at 900°C for all standard pH buffer solution - 34 -
Fig. 3- 16 Extracted response voltages for varied pH with fitting the sensitivity and linearity of TbTaxOy 120:120 and anneal with 900°C - 35 -
Fig. 3- 17 Drift rates of TbTaxOy 120:120 layer after RTA at different temperatures - 36 -
Fig. 3- 18 Hysteresis voltages of TbTaxOy 120:120 on various RTA temperatures. - 37 -


Fig. 4- 1 EIS structure with YbTaxOy sensing membrane. - 46 -
Fig. 4- 2 Flow chart of YbTaxOy EIS process. - 47 -
Fig. 4- 3 XRD analysis of YbTaxOy films with RF sputter 120:80 W and different annealing temperatures - 48 -
Fig. 4- 4 XRD analysis of YbTaxOy films with RF sputter 120:120 W and different annealing temperatures - 48 -
Fig. 4- 5 XRD analysis of YbTaxOy films with RF sputter 120:160 W and different annealing temperatures - 49 -
Fig. 4- 6 3x3μm AFM three domain image of YbTaxOy 120:160 film with 900°С RTA(Rrms = 0.727 nm) - 49 -
Fig. 4- 7 Surface roughness of YbTaxOy sensing membrane with different RTA conditions - 50 -
Fig. 4- 8 The contact angle θ_C. - 51 -
Fig. 4- 9 Contact angle of YbTaxOy 120:80 and RTA annealing temperature at 700°C. - 51 -
Fig. 4- 10 The depth profile of YbTaxOy 120:80 - 53 -
Fig. 4- 11 The depth profile of YbTaxOy 120:120 - 53 -
Fig. 4- 12 The depth profile of YbTaxOy 120:160 - 54 -
Fig. 4- 13 C-V curves of YbTaxOy 120:160 EIS RTA at 900°C for all standard pH buffer solution - 54 -
Fig. 4- 14 Extracted response voltages for varied pH with fitting the sensitivity and linearity of YbTaxOy 120:160 and anneal with 900°C - 55 -
Fig. 4- 15 Drift rates of YbTaxOy 120:160 layer after RTA at different temperatures - 56 -
Fig. 4- 16 Hysteresis voltages of YbTaxOy 120:120 on various RTA temperatures. - 57 -

Fig. 5- 1 The C-V curves of TbTaxOy/Si-EIS 120:80 structure for different glucose concentration annealed at 900˚C. - 65 -
Fig. 5- 2 Sensitivity and linearity of TbTaxOy/Si-EIS 120:160 structure for different glucose concentration annealed at 900˚C. - 65 -
Fig. 5- 3 The C-V curves of TbTaxOy/Si-EIS 120:120 structure for different glucose concentration annealed at 900˚C. - 66 -
Fig. 5- 4 Sensitivity and linearity of TbTaxOy/Si-EIS 120:120 structure for different glucose concentration annealed at 900˚C. - 66 -
Fig. 5- 5 The C-V curves of TbTaxOy/Si-EIS 120:160 structure for different glucose concentration annealed at 700˚C. - 67 -
Fig. 5- 6 Sensitivity and linearity of TbTaxOy/Si-EIS 120:160 structure for different glucose concentration annealed at 700˚C. - 67 -
Fig. 5- 7 The C-V curves of YbTaxOy/Si-EIS 120:80 structure for different glucose concentration annealed at 900˚C. - 68 -
Fig. 5- 8 Sensitivity and linearity of YbTaxOy/Si-EIS 120:80 structure for different glucose concentration annealed at 900˚C. - 68 -
Fig. 5- 9 The C-V curves of YbTaxOy/Si-EIS 120:120 structure for different glucose concentration annealed at 700˚C. - 69 -
Fig. 5- 10 Sensitivity and linearity of YbTaxOy/Si-EIS 120:120 structure for different glucose concentration annealed at 700˚C. - 69 -
Fig. 5- 11 The C-V curves of YbTaxOy/Si-EIS 120:160 structure for different glucose concentration annealed at 900˚C. - 70 -
Fig. 5- 12 Sensitivity and linearity of YbTaxOy/Si-EIS 120:160 structure for different glucose concentration annealed at 900˚C. - 70 -

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