跳到主要內容

臺灣博碩士論文加值系統

(44.210.85.190) 您好!臺灣時間:2022/11/30 01:47
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

我願授權國圖
: 
twitterline
研究生:林郁竣
研究生(外文):Yu-Chun Lin
論文名稱:具堆疊介電層五苯環紫外光電晶體之研究
論文名稱(外文):The study of pentacene-based ultraviolet phototransistors with a stacked dielectric layer
指導教授:蘇水祥橫山明聰
指導教授(外文):Shui-Hsiang SuMeiso Yokoyama
學位類別:碩士
校院名稱:義守大學
系所名稱:電子工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2015
畢業學年度:103
語文別:中文
論文頁數:88
相關次數:
  • 被引用被引用:0
  • 點閱點閱:149
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
本研究以豬血清白蛋白(PSA)與PMMA/SiO2為閘極介電層研製紫外光有機光電晶體,在未照光下比較其電特性,以PSA為閘極介電層結構之光電晶體具飽和電流、載子遷移率、臨界電壓分別為-28.1 µA、2.7 cm2/Vs、-7.53 V,而以PMMA/SiO2為閘極介電層結構之飽和電流、載子遷移率、臨界電壓分別為-2.09 µA、0.126 cm2/Vs、-9.2 V。經紫外光照射後,以PSA為閘極介電層之光電晶體特性衰退,以PMMA/SiO2為閘極介電層之光電晶體對應之電特性提升到-4.4 µA、0.28 cm2/Vs、-8.4 V,故選用PMMA/SiO2堆疊閘極介電層研究紫外光有機光電晶體之特性。
有機光電晶體製作時調變pentacene主動層厚度為35、70、100及150 nm,使用10 W/cm^2、365 nm紫外光光源照射光電晶體並觀察電特性,調變照射時間探討pentacene主動層對於紫外光的吸收率,研究紫外光有機光電晶體之光敏值、光響應、通道電阻。當pentacene主動層厚度為100 nm時,其光生成載子最多使通道電阻值最低,紫外光有機光電晶體具較佳特性,其光敏值、光響應與通道電阻分別為3、0.21與1.8x106 Ω。

In this study, alternatively using albumin from porcine serum (PSA) and poly (methyl methacrylate) (PMMA)/SiO2 as a gate dielectric layer fabricated each different ultraviolet organic phototransistors (UV-PTs). The electrical characteristics under illumination and in the dark of UV-PTs are discussed in this study. Employing PSA as a gate dielectric layer in UV-PTs, the electrical characteristics which shows the output current (IDS) is -28.1 μA, field-effect mobility (μ) is 2.7 cm2/Vs, and the threshold voltage (VT) is -7.53 V, respectively. In the meanwhile, the other UV-PTs with a gate dielectric of PMMA/SiO2 show IDS is -2.09 μA, μ is 0.126 cm2/Vs, and VT is -9.2 V. Comparing with the two devices after UV illumination, experimental results reveal that the UV-PTs with a PSA gate dielectric is decay significantly. However, the UV-PTs with a PMMA/SiO2 gate dielectric shows IDS raising to -4.4 μA, μ to 0.28 cm2/Vs, and VT to -8.4 V. Therefore, the study adopts PMMA/SiO2 as a stacked gate dielectric layer to develop UV-PTs characteristics.
UV-PTs are fabricated by varying the pentacene active layer thickness of 35 nm, 70 nm, 100 nm and 150 nm. Their electrical characteristics are observed under illumination of a 365 nm ultraviolet light source at 10 W/cm2. The absorbance of active layer was discussed by vary irradiating time. Moreover, the photosensitivity, responsibility and channel resistance of UV-PTs’ were characterized. When the active layer, pentacene, thickness was 100 nm, the UV-PTs had the lowest channel resistance owing to increased photo-generated carriers and demonstrated an optimized photosensitivity of 3, responsibility of 0.21 and channel resistance of 1.8 x106 Ω, respectively.

摘要 1
ABSTRACT 2
誌謝 4
目錄 5
表目錄 7
圖目錄 8
第一章 緒論 10
1-1研究背景 10
1-2研究動機與目的 11
第二章 基礎理論 13
2-1有機半導體簡介 13
2-1-1 有機半導體之發展 13
2-1-2有機半導體傳輸機制 13
2-1-3 有機薄膜電晶體發展 14
2-2有機薄膜電晶體之簡介 15
2-2-1 有機薄膜電晶體半導體材料 15
2-2-2有機薄膜電晶體結構 16
2-2-3有機薄膜電晶體半導體與金屬接面 16
2-2-4 有機薄膜電晶體操作原理 17
2-3有機薄膜電晶體之公式參數介紹 18
2-3-1 載子遷移率(Mobility) 18
2-3-2 臨界電壓(VTH) 19
2-3-3次臨界斜率(Subthreshold swing) 20
2-3-4 開關電流比(ON/OFF current ratio) 20
第三章 實驗設計與製作 27
3-1實驗架構 27
3-2實驗材料 27
3-2-1閘極電極(Gate) 27
3-2-2閘極介電層(Dielectric layer) 28
3-2-3主動層(Active layer) 29
3-2-4源極、汲極(Source、Drain) 29
3-3實驗設備 30
3-3-1旋轉塗佈機 30
3-3-2高真空熱蒸鍍系統 30
3-3-3紫外光照射儀器 31
3-3-4實驗量測儀器 31
3-4實驗步驟 32
3-4-1 ITO玻璃基板清洗 32
3-4-2 UV-ozone表面處理 33
3-4-3介電層溶液調配 33
3-4-3-1 PMMA介電層溶液調配 33
3-4-3-2 SiO2介電層溶液調配 34
3-4-3-3 PSA介電層溶液調配 34
3-4-4 有機半導體薄膜蒸鍍 35
3-4-5 電極蒸鍍 36
3-5實驗量測 37
3-5-1 有機薄膜光電晶體元件電特性量測 37
3-5-2介電層接觸角、表面能 37
3-5-3主動層原子力顯微儀(AFM)量測 39
3-5-4主動層X-ray薄膜繞射儀量測 40
3-5-5場發射掃描式電子顯微鏡(FE-SEM)量測 40
第四章 結果與討論 51
4-1 PMMA/SiO2結構對有機薄膜電晶體影響 51
4-1-1 PMMA/SiO2結構經由UV-ozone表面處理對有機薄膜電晶體影響 51
4-1-2 PMMA/SiO2結構經由UV-ozone表面處理對接觸角影響 52
4-1-3 PMMA/SiO2結構經由UV-ozone表面處理對介面陷阱密度影響 52
4-2 比較PSA與PMMA/SiO2結構製作紫外光電晶體 53
4-3調變主動層厚度對光電流之影響 54
4-3-1 Pentacene主動層經由改變厚度對於有機薄膜光電晶體影響 56
4-3-2 Pentacene主動層材料對於紫外光吸收率的電特性影響 56
4-4 調變主動層厚度比較光敏值對有機薄膜光電晶體影響 57
第五章 結論與展望 79
5-1 結論 79
5-2 展望 80
參考文獻 81

[1].N. J. Watkins, L. Yan, and Y. Gao, “Electronic structure symmetry of interfaces between pentacene and metals”, Appl. Phys. Lett., Vol. 80, p.4384 (2002).
[2].T. Ahn, H. Jung, H. J. Suk, and Mi Hye Yi, “Effect of postfabrication thermal annealing on the electrical performance of pentacene organic thin-film transistors”, Synth. Met. Vol.159, p.1277 (2009).
[3].C.D. Dimitrakopoulos, and P.R.L. Malenfant, “Fabrication and characterization of organic thin-film transistors with high field-effect mobility”, Adv. Mater. Vol. 14, p.99 (2002).
[4].Y. S. Park, and H. K. Kim, “Characteristics of sputtered Al-doped ZnO films for transparent electrodes of organic thin-film transistor”, Thin Solid Films, Vol. 519, p.8018 (2011).
[5].D. W. Kim, H. J. Kim, H. W. So, Y. U. Lee, and M. P. Hong, “Effect of the high vacuum seasoning process on poly (4-vinyl phenol) as organic gate dielectric in all solution-processed organic thin-film transistors”, Thin Solid Films, Vol. 521, p.235 (2012).
[6].Y. L. Loo, R. L. Willett, K. W. Bldwin, and A. Rogers, “Additive, Nanoscale Patterning of Metal Films with a Stamp and a Surface Chemistry Mediated Transfer Process”, Appl. Phys. Lett., Vol. 81, p.562 (2002)
[7].M. H. Yoon, H. Yan, A. Facchetti, and T. J. Marks, “Low-voltage organic field-effect transistors and inverters enabled by ultrathin cross-linked polymers as gate dielectrics”, J. Am. Chem. Soc., Vol. 127, p.10388 (2005).
[8].C. Bartic, H. Jansen, A. Campitelli, and S. Borghs, “Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors”, Org. Electron., Vol. 3, p.65 (2002).
[9].J. Veres, S. Ogier, and G. Lloyd, “Gate insulators in organic field-effect transistors”, Chem. Mater., Vol. 16, p.4543 (2004).
[10].T. G. Kim, E. H. Jeong, S. C. Lim, S. H. Kim, G. H. Kim, S. H. Kim, H. Y. Jeon, and J. H. Youk, “PMMA-based patternable gate insulators for organic thin-film transistors”, Synth. Met., Vol. 159, p.749 (2009).
[11].H. Klauk, M. Halik, U. Zschieschang, G. Schmid, and W. Radlik, “High-mobility polymer gate dielectric pentacene thin film transistors”, J. Appl. Phys., Vol. 92, p.5259 (2002).
[12].H. W. Zan, K. H. Yen, P. K. Liu, K. H. Ku, C. H. Chen, and J. C. Hwang, “Low-voltage organic thin film transistors with hydrophobic aluminum nitride film as gate insulator”, Org. Electron., Vol. 8, p.450 (2007).
[13].C. H. Wang, C. Y. Hsieh, and J. C. Hwang, “Flexible organic thin-film transistors with silk fibroin as the gate dielectric”, Adv. Mater., Vol. 23, p.1630 (2011).
[14].J. W. Chang, C. G. Wang, C. Y. Huang, T. D. Tsai, T. F. Guo, and T. C. Wen, “Chicken albumen dielectrics in organic field-effect transistors”, Adv. Mater., Vol. 23, p.4077 (2011).
[15].T. Anthopoulos, Appl. Phys. Lett., Vol. 91, p.113513 (2007).
[16].B. Crone, A. Dodabalapur, Y. Y. Lin, R. W. Fillas, Z. Bao, A. Laduca, R. Sarpeshkar, H.E.Katz, and W. Li, Nature, Vol. 403, p.521 (2000).
[17].J. Zaumseil, R. H. Friend, and H. Sirringhaus, Nat. Mater., Vol. 5, p.69 (2006).
[18].Y.Y. Noh, J. Ghim, S.J. Kang, K.J. Baeg, D.Y. Kim and K. Yase. Appl. Phys. Vol. 100, p.094501 (2006).
[19].M. Debucquoy, S. Verlaak, S. Steudel, K. Myny, J. Genoe, and P. Heremans, Appl. Phys. Lett., Vol. 91, p.103508 (2007).

[20].S. W. Jeong, J. W. Jeong, S. Chang, S. Y. Kang, K. I. Cho, and B. K. Ju, Appl. Phys. Lett., Vol. 97, p.253309 (2010).
[21].Shang-Hsuan Li, Dr. Meiso Yokoyama and Shui-Hsiang Su “Enhancing the photocurrent of organic phototransistors using a stacked dielectric layer” (2014).
[22].Y. J. Chang , and E. W. Castner, “Deuterium isotope effects on the ultrafast solvent relaxation of formamide and N,N-Dimethylformamide”, J. Phys. Chem., Vol. 98, p.9712 (1994).
[23].K. Sakoda, “Numerical analysis of eigenmodes localized at line defects in photonic lattices”, Phys. Rev. B, Vol. 56, p.14905 (1997).
[24].D. Knipp, R. A. Street, and A. R, Appl. Phys. Lett., Vol. 82, p.3907 (2003).
[25].S. E. Fritz, T. W. Kelley, and C. D. Frisbie, J. Phys. Chem. B, Vol. 109, p.10575 (2005).
[26].D. Knipp, R. A. Street, A. R, and J. Ho, J. Appl. Phys., Vol. 93 p.347 (2003).
[27].F. Ebisawa, T. Kurokawa, and S. J. Nara, “ Electricalproperties of polyacetylene polysiloxane interface” Appl. phys., Vol. 54, p.3255 (1983).
[28].C. J. Huang, T. H. Meen, S. L. Wu, G. M. Su and H. G. Chen, “Study on wet-etching characteristics of ITO films in OLED application”, Optics and Photonics Taiwan, Dec, p. 126 (2002)
[29].S. Okur, F. Yakuphanoglu, and E. Stathatos, “High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol–gel method”, Microelectronic Engineering, Vol. 87, p.635 (2010).
[30].O.  D. Jurchescu, M. Popinciuc, B . J. van Wees and T.  T.  M. Palstra, “Interface-controlled, high mobility organic transistor”, Adv. Mater., Vol. 19, p.688 (2007).

[31].T. Ahn, J. W. Kim, Y. Choi, and M. H. Yi, “Hybridization of a low-temperature processable polyimide gate insulator for high performance pentacene thin-film transistors”, Org. Electron., Vol. 9, p.711 (2008).
[32].H. L. Cheng, Y. S. Mai, W. Y. Chou, L. R. Chang, and X. W. Liang, “Thickness-dependent structural evolutions and growth models in relation to carrier transport properties in polycrystalline pentacene thin films”, Adv. Funct. Mater., Vol. 17, p.3639 (2007).
[33].C. H. Wang, S. W. Chen, and J. Hwang, “Ordering of pentacene in organic thin film transistors induced by irradiation of infrared light”, Appl. Phys. Lett., Vol. 95, p.103302 (2009).
[34].By Horng-Long Cheng, Yu-Shen Mai, Wei-Yang Chou, Li-Ren Chang, and Xin-Wei Liang, Adv. Funct. Mater., Vol. 17, p.3639, DOI: 10.1002/adfm.200700207 (2007).
[35].Takashi Minakata, Hideaki Imai, Masaru Ozaki and Kentaro Saco, “Structural studies on highly ordered and highly conductive thin films of pentacene” J. Appl. Phys., Vol. 72, p.5220 (1992)
[36].Drummy L. F., and Martin D. C. “Thickness-Driven Orthorhombic to Triclinic Phase Transformation in Pentacene Thin Films”, Adv. Mater, Vol. 17, p.903 (2005).
[37].G.Binnig, C. F. Quate, and C. Gerber, “Atomic forcemicroscope”, Phys. Rev. Lett., Vol. 56, p.930 (1986).
[38].Hyeok Kim, Jin-Hyuk Bae, Gilles Horowitz, Woo Young Kim, and Yoonseuk Choi, “Effects of the solvent polarity of a polymeric insulator on field-effect mobility in an organic thin-film transistor”, Solid-State Electronics, Vol. 81, p. 140 (2013).

[39].Jae Bon Koo, Seong Yeol Kang, In Kyu You, and Kyung Soo Suh, “Effect of UV/ozone treatment on hysteresis of pentacene thin-film transistor with polymer gate dielectric”, Solid-State Electronics, Vol. 53, p.621 (2009).
[40].S. M. Sze, John Wiley and Sons, “Physics of Semiconductor Devices” (1981).
[41].H. -S. Seo, Y. S. Jang, Y. Zhang, P. Syed, and J. H. Choi, Org. Electron., Vol. 9, p.432 (2008).
[42].T. H. Huang, K. C. Liu, Z. Pei, W. K. Lin, and S. T. Chang, “A poly(styrene-co-methyl methacrylate)/room-temperature sputtered hafnium oxide bi-layer dielectrics as gate insulator for a low voltage organic thin-film transistors”, Org. Electron., Vol. 12, p.1527 (2011).
[43].G. Horowitz, “Tunneling current in polycrystalline organic thin-film transistors”, Adv. Funct. Mater., vol. 13, p.53 (2003).
[44].Howard P. Baden, M. D. and Carol Pearlman, “The effect of ultraviolet light on protein and nucleic acid synthesis in the epidermis” The Journal of Investigative Dermatology 43, p 71; doi: 10.1038 (1964)
[45].Jiyoul Lee, Kibum Kim, Jae Hoon Kim, Seongil Im and Duk-Young “JungOptimum channel thickness in pentacene-based thin-film transistors” Appl. Phys. Lett., Vol. 82, p.4169 (2003).
[46].M. Shtein, J. Mapel, Jay B. Benziger, and S. R. Forrest, “A publication of the American Institute of physics, Suite 1NO1, 2 Huntington Quadrangle” Appl. Phys. Lett., Vol. 81, p. 2 (2002).

[47].Yu-Chang Li, Yu-Ju Lin, Chia-Yu Wei, Dei-Wei Chou, and Chun-Ho Tsao, “Influence of illumination on the output characteristics in pentacene thin film transistors”, Materials Chemistry and Physics, Vol. 142, p. 428 (2013).
[48].Harutyun Melikyan, Youngwoon Yoon, Hanju Lee, Jerome Carnis, Arsen Babajanyan, Barry Friedman, and Kiejin Lee, “Visualization of photogeneration transport characteristics of a pentacene thin-film transistor at selected wavelengths”, Thin Solid Films, Vol. 534, p.503 (2013).
[49].Hsiao-Wen Zan and Kuo-Hsi Yen, Electrochem. Solid-State Lett., Vol. 11, p. 222, doi: 10.1149 (2008).
[50].El Amrania, B. Lucasb, B. Ratierb, and A. El Amrani, Synthetic Metals, Vol. 161, p.2566 (2012).
[51].Lucas, A. El Amrani, M. Chakaroun, B. Ratier, R. Antony, A. Moliton, and B. Lucas, Thin Solid Films, Vol. 517, p. 6280 (2009).

QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top