臺灣博碩士論文加值系統

本論文利用氧化銅(CuO)與氧化亞銅(Cu2O)粉末製作CuxO薄膜作為電阻式記憶體的絕緣層，使用熱蒸鍍系統沉積CuxO薄膜於底電極白金(Pt)上，接著使用半導體工業用的快速熱退火 (rapid thermal anneal，RTA )改變CuxO薄膜的性質。觀察薄膜特性變化，藉由掃描式電子顯微鏡(SEM)觀察其表面形貌，及使用原子力顯微鏡(AFM)觀察薄膜的粗糙度是否對於轉態特性造成影響，並利用低掠角X光繞射儀(GXRD)進行結晶性分析與X射線光電子能譜(XPS)分析薄膜化學鍵結。以熱蒸鍍系統沉積金屬銅(Cu)和鎳(Ni)電極在CuxO薄膜以完成金屬/絕緣層/金屬(MIM)結構以進行電性量測。得知屬於雙極性切換元件，而不同RTA條件會使元件的轉態特性改變，且轉態機制效應從電化學效應改變為熱化學效應，並歸納不同RTA條件CuxO薄膜之轉態特性和轉態機制效應。

In this thesis, the use of copper oxide (CuO) and cuprous oxide (Cu2O) for preparing a film as the insulating layer CuxO RRAM using thermal evaporation system CuxO film deposited on the bottom electrode of platinum (Pt), then use the semiconductor industry rapid thermal annealing (RTA) CuxO change the nature of the film. in order to observe the characteristic change in the film, by a scanning electron microscope (SEM) to observe the surface morphology, and using an atomic force microscope (AFM) observation of the roughness of the film whether to turn state properties impact, and the use of low grazing angle X-ray diffraction instrument (GXRD) crystallized analysis and X-ray photoelectron spectroscopy (XPS) analysis film chemical bonding. In thermal evaporation deposition system of copper (Cu) and nickel (Ni) metal electrode film to complete CuxO metal / insulator / metal (MIM) structure for electrical measurements. That belongs to the bipolar switching element, and different RTA conditions will turn changing element of state properties and state transfer mechanism is changed from the electrochemical effects of thermo-chemical effects, and summarizes the different RTA conditions turn state CuxO thin film properties and turn state mechanisms effect.

中文摘要 I
英文摘要 II
誌謝 III
目錄 IV
表目錄 VII
圖目錄 VII
第一章 緒論 1
1-1 前言 1
1-2 研究動機與目的 2
1-3 論文架構 3
第二章 文獻回顧與理論基礎 4
2-1 記憶體簡介 4
2-1-1相變化記憶體 5
2-1-2磁阻式記憶體 6
2-1-3鐵電式記憶體 7
2-1-4電阻式記憶體 8
2-2 電阻式記憶體應用材料 10
2-2-1鈣鈦礦材料 10
2-2-2高分子材料 10
2-2-3石墨烯 10
2-3 二元氧化物 12
2-3-1氧化亞銅與氧化銅 12
2-4 電阻切換特性 16
2-4-1單極性切換 16
2-4-2雙極性切換 17
2-5 電阻切換機制 18
2-5-1熱化學效應 18
2-5-2電化學效應 20
2-5-3價數變換效應 22
第三章 實驗方法與步驟 24
3-1 元件製備方法 25
3-1-1白金基板製作 25
3-1-2絕緣層CuxO薄膜製備 26
3-1-3快速熱退火之製備 27
3-1-4金屬上電極之製備 27
3-2 材料特性分析 28
3-2-1X光薄膜繞射儀 28
3-2-2場發射型掃描式電子顯微鏡 28
3-2-3原子力顯微鏡 29
3-2-4X光光子能譜儀 30
3-3 電性量測分析 30
3-3-1電阻切換特性分析 31
第四章 結果與討論 33
4-1 由Cu2O粉末製作薄膜的分析 33
4-1-1薄膜良率分析 33
4-1-2材料特性分析 34
A. CuxO薄膜表面微結構分析 34
B. CuxO薄膜表面粗糙度分析 36
C. CuxO薄膜結晶性分析 38
D. CuxO薄膜化學鍵結分析 39
4-1-3電性量測分析 42
A.未經RTA樣品之電性分析 42
1. Ni/CuxO/Pt結構基本電性分析 42
2. Cu/CuxO/Pt結構基本電性分析 45
B.經RTA CuxO薄膜之Cu/CuxO/Pt結構之電性分析 49
4-2 由CuO粉末製作薄膜的分析 52
4-2-1薄膜良率分析 52
4-2-2材料特性分析 52
A. CuxO薄膜表面微結構分析 53
B. CuxO薄膜表面粗糙度分析 54
C. CuxO薄膜結晶性分析 56
D. CuxO薄膜化學鍵結分析 57
4-2-3電性量測分析 60
A.未經RTA樣品之電性分析 60
B.經RTA CuxO薄膜之Cu/CuxO/Pt結構之電性分析 63
第五章 結論與未來展望 67
5-1 結論 67
5-2 未來展望 68
參考文獻 (Reference) 69

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