臺灣博碩士論文加值系統

本篇論文使用固態燒結技術，來製備不同摻雜比例之摻雜三氧化鎢(WO3)的氧化鋅靶材，並使用脈衝雷射沉積法(Pulsed laser deposition)來沉積製作摻雜三氧化鎢的氧化鋅薄膜，並對靶材及所沈積的薄膜進行不同基板溫度處理後之特性分析。
就摻雜三氧化鎢的氧化鋅靶材而言，其三氧化鎢的組成比例分別是未摻雜之純氧化鋅(0 wt%)、1.0 wt%、3.0 wt%、5.0 wt%、7.0 wt%以及9.0 wt%等；至於，沈積過程的基板溫度分別為200C、250C、300C、350C以及400C等，由此來探討不同基板溫度以及不同摻雜比例對摻雜三氧化鎢之氧化鋅薄膜性質的影響性。
XRD的量測分析結果顯示，所有沈積的薄膜皆是單一相六角纖鋅礦結構的氧化鋅，其薄膜的成長方向呈現繞射峰值(002)的優選方位。由霍爾效應量測儀的量測分析結果可得到，摻雜1.0 wt%三氧化鎢於氧化鋅之薄膜，而基板溫度為300C時，可得到最佳的導電性以及光學性；在導電性方面，其電阻率為1.97 x 10-3 -cm、載子濃度為3.42 x 1020 cm-3、載子移動率則是9.27 cm2V-1s-1等。在光學性方面，在可見光波長範圍(380~780 nm)之內，其平均光穿透率可達到86%以上；能隙值可經由紫外光-可見光光譜儀量測以及計算後，其能隙值大小隨著摻雜三氧化鎢的含量而有所變化的。

關鍵詞 : 摻雜三氧化鎢之氧化鋅、脈衝式雷射沉積法、透明導電膜、霍爾效應量測儀、能隙值、載子移動率

In this study, the WO3-doped ZnO (WZO) bulk-like targets with various doping amount of WO3 were prepared by the solid-state sintering technique, while the corresponding WO3-doped ZnO thin films were prepared by the pulsed laser deposition (PLD). The physical properties of the bulk-like WZO targets and the deposited WZO thin films, which depend on various doping amount and substrates temperatures during deposition, were characterized by qualitative or/and quantitative measurements.
The relationship between physical characteristics of the deposited WO3-doped ZnO films deposited by process conditions was studied. From the XRD measurement results show that all films exhibit the single-phase hexagonal Wurzite structure with the (002) preferred orientation. For the sample with 1.0 wt.% WO3-doped ZnO film and substrate temperature was maintained at 300C, the deposited film exhibits the lowest resistivity of 1.97 x 10-3 Ω-cm, highest carrier concentration of 3.42 x 1020 cm-3, and carrier mobility of 9.27 cm2V-1s-1. The average light transmittance of the deposited film in the visible spectrum was measured to be more than 86%. The energy gap can be measured and calculated via UV-Vis spectrometer and the magnitude of energy gap depends on the doping amount of tungsten oxide(WO3) in the ZnO.

Keywords : WO3-doped ZnO, pulsed laser deposition, transparent conductive films, Hall-effect measurement, energy gap, carrier mobility

摘要 i
Abstract ii
誌謝 iii
目錄 iv
圖目錄 vi
第一章 緒論 1
1.1 前言 1
1.2 研究目的 2
第二章 理論基礎與文獻回顧 3
2.1 脈衝雷射沉積法 3
2.1.1脈衝雷射系統 3
2.1.2 脈衝雷射沉積機制 5
2.2 電漿理論 5
2.3 薄膜成形機制 7
2.4 透明導電薄膜 10
2.4.1 透明導電薄膜導電原理 10
2.4.2 透明導電薄膜光學性質 12
第三章 實驗流程與量測方法 16
3.1 靶材製程材料與工具 16
3.1.1 靶材製程之材料 16
3.1.2 靶材製程之工具 16
3.1.3三氧化鎢摻雜氧化鋅靶材之製作 20
3.2 薄膜製作流程 23
3.2.1基板清潔 23
3.2.2 製備薄膜之儀器 25
3.2.3 三氧化鎢摻雜氧化鋅薄膜製程 25
3.3 實驗儀器 27
3.3.1 X-ray繞射分析儀 27
3.3.2 掃描式電子顯微鏡 28
3.3.3 表面輪廓儀 29
3.3.4 霍爾效應 30
第四章 結果與討論 33
4.1 三氧化鎢摻雜氧化鋅靶材之量測分析 33
4.1.1 三氧化鎢摻雜氧化鋅靶材之XRD分析 33
4.1.2 三氧化鎢摻雜氧化鋅靶材之SEM分析 36
4.2 三氧化鎢摻雜氧化鋅薄膜之基板溫度影響 37
4.2.1 三氧化鎢摻雜氧化鋅薄膜之XRD分析 37
4.2.2 三氧化鎢摻雜氧化鋅薄膜之SEM分析 55
4.2.3 三氧化鎢摻雜氧化鋅薄膜之電性分析 58
4.2.4 三氧化鎢摻雜氧化鋅薄膜之α-step分析 64
4.2.5 三氧化鎢摻雜氧化鋅薄膜之光譜分析 68
第五章 結論 72
參考文獻 73

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