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研究生:彭若綺
研究生(外文):Jo-Chi Peng
論文名稱:以脈衝雷射沉積摻雜氧化鉭之氧化鋅薄膜與其光電特性探討
論文名稱(外文):Optoelectronic Characterization of Ta-Doped ZnO Thin Films by Pulsed Laser Deposition
指導教授:秦弘毅顧鴻壽顧鴻壽引用關係
指導教授(外文):Hung-I ChinHorng-Show Koo
口試委員:秦弘毅顧鴻壽許家豪
口試委員(外文):Hung-I ChinHorng-Show KooChia-Hao Hsu
口試日期:2015-07-03
學位類別:碩士
校院名稱:明新科技大學
系所名稱:電子工程系碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2015
畢業學年度:103
語文別:中文
論文頁數:76
中文關鍵詞:脈衝雷射蒸鍍法透明導電薄膜摻雜氧化鉭之氧化鋅導電性透光性
外文關鍵詞:Tantalum oxideZinc oxideTransparent conducting oxidesPulsed laser depositionOptical transmittance
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本論文的目的主要在於研究使用脈衝雷射沉積法來沉積摻雜氧化鉭之氧化鋅(Ta2O5-doped ZnO, TZO)薄膜,並探討不同摻雜量和不同基板溫度對氧化鉭之氧化鋅薄膜的物理特性。
氧化鉭之氧化鋅(TZO)的透明導電薄膜的製作,是以物理方式的固態燒結法來製作未摻雜氧化鉭之氧化鋅以及摻雜氧化鉭之氧化鋅(1 wt%、2 wt%、3 wt%、4 wt%、5 wt%)的靶材,其次再以脈衝雷射蒸鍍法(Pulsed Laser Deposition, PLD)沉積薄膜在玻璃基板(Corning Eagle XG)上,改變基板溫度條件為200℃、250℃、300℃、350℃、400℃等。然後,分析基板溫度對摻雜氧化鉭之氧化鋅(TZO)薄膜的結構、光學和電子等特性的影響進行測定。
從X射線繞射分析儀(X-Ray Diffraction, XRD)量測的結果顯示,摻雜氧化鉭之氧化鋅(TZO)薄膜呈現纖鋅礦相的六方晶系的晶體結構,沿繞射峰值(002)優選方向成長。從可見光-紅外光分光光譜儀(VIS-NIR spectrometers)量測的結果得知,在可見光(550nm)範圍,其光的穿透率可達77%以上。從霍爾系統量測的結果得知,沉積在摻雜濃度為4 wt%和基板溫度為300℃的薄膜特性最好,其最低電阻率可達1.63 × 10-3 Ω-cm,而載子濃度為7.32 × 1020 cm-3,載子遷移率為5.22 cm2 V-1s-1。綜合性的結果顯示,沉積摻雜氧化鉭之氧化鋅(TZO)薄膜的電學和光學性質大大地相依於基板溫度的變化和氧化鉭摻雜量的濃度變化。
目前所研究的摻雜氧化鉭之氧化鋅薄膜,其電學和光學特性適合應用於太陽能電池的視窗層(Window Layer)以及觸控面板的感應層(Sensor Layer),有機發光二極體和發光二極體的光電元件,皆表現出極為良好的物理特性。

In this study, Transparent conductive oxide of tantalum oxide(Ta2O5) doped Zinc Oxide (ZnO) thin film were deposited on glass substrates (Corning Eagle XG) with doping amount of 0 wt%, 1 wt%, 2 wt%, 3 wt%, 4wt% and 5wt% at different substrate temperatures from 250 to 400 oC by the pulsed laser deposition (PLD) technique.
The effect of substrate temperature on the structural, optical and electronic characteristics of Ta-doped ZnO (TZO) films with 0 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt% and 5 wt% dopant of tantalum oxide (Ta2O5) were measured and demonstrated in terms of x-ray diffraction (XRD), visible- Near-Infrared spectrometer(VIS-NIR spectrometers), α-step and Hall-effect measurements.
X-ray diffraction pattern shows that TZO films grow in hexagonal crystal structure of wurtzite phase with a preferred orientation of the crystallites along (002) direction and exhibits better physical characteristics of optical transmittance, electrical conductivity, carrier concentration and mobility for the application of window layer in the optoelectronic devices of solar cells, OLEDs and LEDs. The lowest electrical resistivity () and the highest carrier concentration of the as-deposited film deposited at 300oC with 4 wt% are measured as1.63 × 10-3 Ω-cm and 7.32 × 10-20 cm-3, respectively. VIS-NIR spectrometers pattern shows that optical transmittance of the as-deposited film is above 77% in the range of 550nm wavelength.
It is found that electrical and optical properties of the as-deposited TZO film are greatly dependent on substrate temperature during laser ablation deposition.

摘 要 i
Abstract ii
致謝 iii
表目錄 vi
圖目錄 vii
第一章 緒論 1
1.1 前言 1
1.2 研究動機 2
第二章 理論基礎與文獻回顧 3
2.1透明導電薄膜簡介 3
2.1.1透明導電膜導電機制 4
2.1.2透明導電膜應用 5
2.2 氧化鋅晶體結構及特性 7
2.3 氧化鋅薄膜特性 9
2.3.1 導電性質 9
3.3.2 光學性質 10
2.4氧化鋅薄膜發光機制 10
2.5 薄膜沉積機制 12
第三章 實驗方法 14
3.1靶材製作流程 14
3.1.1靶材製作材料 14
3.1.2 靶材製作工具 14
3.1.3 摻雜氧化鉭之氧化鋅靶材製作 17
3.2薄膜製作流程 19
3.2.1基板的處理方式 19
3.2.2 薄膜製作的設備 21
3.2.3 摻雜氧化鉭之氧化鋅薄膜製作 22
3.3 物理量測儀器 23
3.3.1 X射線繞射分析儀 23
3.3.2 能量散射光譜儀 25
3.3.3 掃描式電子顯微鏡 26
3.3.4 可見光-紅外光分光光譜儀 28
3.3.5 霍爾效應量測 29
3.3.6表面輪廓儀 30
第四章 結果與討論 31
4.1摻雜氧化鉭之氧化鋅靶材製作及其物性分析 31
4.1.1結晶相及晶體結構 31
4.2 摻雜氧化鉭之氧化鋅薄膜製作及其物性分析 33
4.2.1結晶相及晶體結構 33
4.2.2 光譜特性分析 51
4.2.3電學特性分析 59
第五章 結論 66
參考文獻 67
成果發表以及相關學術性活動紀錄 73
作者簡介 76

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