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[1]G. Fasol: Science 272, 1751(1996) [2]F. A. Ponce and D. P. Bour: Nature 386, 351(1997) 施敏,半導體元件物理與製作技術,國立交通大學,2003年。 [3]H. R. Shanks, P. D. Maycock, P. H. Sidles, G. C. Danielson, “Thermal Conductivity of Silicon from 300 to 1400°K”, Phys. Rev. 130 (1963) 1743‐1748. [4]C.Y.Liu a, C.C.Lai b, J.H.Liao b, L.C.Cheng c, H.H.Liu c, C.C.Chang a, G.Y.Lee c, J.-I. Chyi c, L.K.Yeh d, J.H.He d, T.Y.Chung b, L.C.Huang b, K.Y.Lai ”Nitride-based concentrator solar cells grown on Si substrates”, Solar Energy Materials & Solar Cells 117(2013)54–58 [5]Jinn-Kong Sheu,1,2,* Fu-Bang Chen,1 Shou-Hung Wu,1 Ming-Lun Lee,3Po-Cheng Chen,1 and Yu-Hsiang Yeh1” Vertical InGaN-based green-band solar cells operating under high solar concentration up to 300 suns”,OSA 25 August 2014 Vol. 22, No. S5 [6]Zhen Bi, Jincheng Zhang, Ling Lv, and Yue Hao”The Effect of 3-MeV Proton Irradiation on the Performance of InGaN/GaN MQWs Solar Cells”, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 26, NO. 15, AUGUST 1, 2014 [7]R. M. Farrell, A. A. Al-Heji, C. J. Neufeld, X. Chen, M. Iza, S. C. Cruz, S. Keller, S. Nakamura, S. P. DenBaars,U. K. Mishra, and J. S. Speck” Effect ofintentional p-GaN surface roughening on the performance of InGaN/GaN solar cells”, Applied Physics Letters 103, 241104 (2013) [8]Sirona Valdueza-Felip1†, Anna Mukhtarova1†, Louis Grenet2, Catherine Bougerol3,Christophe Durand1, Joel Eymery1, and Eva Monroy1,” Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells forhybrid integration”, Applied Physics Express 7, 032301 (2014) [9]Yang Jing(杨静)a), Zhao De-Gang(赵德刚)a)†, Jiang De-Sheng(江德生)a), Liu Zong-Shun(刘宗顺)a),Chen Ping(陈平)a), Li Liang(李亮)a), WuLiang-Liang(吴亮亮)a), Le Ling-Cong(乐伶聪)a),Li Xiao-Jing(李晓静)a), HeXiao-Guang(何晓光)b), Wang Hui(王辉)b), Zhu Jian-Jun(朱建军)b),ZhangShu-Ming(张书明)b), Zhang Bao-Shun(张宝顺)b), and Yang Hui(杨辉)a)b,” Effects of polarization and p-type GaN resistivity on the spectral response ofInGaN/GaN multiple quantum well solar cells”, Chin. Phys. B Vol. 23, No. 6 (2014) 068801 [10]N. G. Young, E. E. Perl, R. M. Farrell, M. Iza, S. Keller, J. E. Bowers, S.Nakamura, S. P. DenBaars, and J. S.Speck,” High-performance broadband opticalcoatings on InGaN/GaN solar cells formultijunction device integration”, Applied Physics Letters 104, 163902 (2014); [11]R. Dahal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang,” Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis”, Applied Physics Letters 104, 143901 (2014) [12]Jiamin Liao,† Baisheng Sa,† Jian Zhou,‡ Rajeev Ahuja,§ and Zhimei Sun,” Design of High-Efficiency Visible-Light Photocatalysts for Water Splitting:MoS2/AlN(GaN) Heterostructures”, J. Phys. Chem. C 2014, 118, 17594−17599 [13]Yi-An Chang,1 Fang-Ming Chen,2 Yu-Lin Tsai,1 Ching-Wen Chang,3 Kuo-JuChen,1Shan-Rong Li,2 Tien-Chang Lu,1 Hao-Chung Kuo,1,* Yen-Kuang Kuo,4Peichen Yu,1Chien-Chung Lin,5 and Li-Wei Tu3,” Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes”,OSA 25 August 2014 Vol. 22, No. S5 [14]施敏,”半導體元件物理與製作技術”,國立交通大學,2003年。 [15]黃惠良、曾百亨等,”太陽電池”,五南出版社,2008年。 [16]L. Liu, J.H. Edgar,” Substrates for gallium nitride epitaxy”, Materials Science and Engineering, pp.61–127,(2002). [17]M. Sakai, T. Egawa1, H. Ishikawa, and T. Jimbo,” Reduction of the bowing inMOVPE AlGaN/GaN HEMT structures by using an interlayer insertion method”,Physica Status Solid, vol.7, pp.2412–2415 (2003) . [18]E.T.Yu and M.O.Manasreh,”Ⅲ-Ⅴ Nitride Semiconductors: Applications &Devices”, Taylor & Fransic,(2002) [19]J. Bernat, P. Javorka, A. Fox, M. Marso, ”Influence of Layer Structure on Performance of AlGaN/GaN High Electron Mobility Transistors before and afterPassivation”, Journal of Electronic Materials, vol. 33, pp. 5, (2004). [20]P. M. F. J. Costa, R. Datta, M. J. Kappers, M. E. Vickers, C. J. Humphreys, D.M.Graham, P. Dawson, M. J. Godfrey, E. J. Thrush, J. T. Mullins, “Misfit dislocations inIn‐rich InGaN/GaN quantum well structures”, Phys. Stat. Sol. (a) 203 (2006) 1729‐1732. [21]R. A. Arif, Y.-K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emittingdiodes,” Appl. Phys. Lett., vol. 91, pp. 091110-1–091110-3, 2007. [22]A. Krost, A. Dadgar, “GaN‐Based Devices on Si”, Phys. Stat. Sol. (a)194,No.2 ,361‐375(2002) [23]A. Dadgar, J. Christen, T. Riemann, S. Richter, J. Blasing, A. Diez, A. Krost, Alam, M.Heuken, “Bright blue electroluminescence from an InGaN/GaN multiquantum‐welldiode on Si(111): Impact of an AlGaN/GaN multilayer”, Appl. Phys. Lett. 78 (2001)2211‐2213. [24]D. Zhu, C. McAleese, M. Ha‥berlen, M. J. Kappers, N. Hylton, P. Dawson, G. Radtke,M. Couillard, G. A. Botton, S.‐L. Sahonta, and C. J. Humphreys, “High‐efficiencyInGaN/GaN quantum well structures on large area silicon substrates”, Phys. Stat. Sol. (a)209, No. 1, 13–16 (2012) [25]A. Krost, A. Dadgar, “GaN‐Based Devices on Si”, Phys. Stat. Sol. (a)194,No.2 ,361‐375(2002)
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