臺灣博碩士論文加值系統

本論有兩個研究主軸，第一個主軸是增加電子注入效率以提升元件表現，第二個主軸為使用導納頻譜法作數據分析，並將研究主軸分成三個部分來進行實作討論。
　　第一部分首先建立有機半導體元件的等效電路模型，並且用導納頻譜法量測電容與電導數值。實驗結果顯示，NPB與MADN的元件經導納頻譜法分析出的薄膜等效電容和等效電阻參數相當準確，並且再進一步利用變溫系統觀察不同的薄膜反應時間，可以求出活化能，其數據也與研究論文相當接近。因此我們驗證了導納頻譜的分析是精準且可信服的。
　　第二部分的研究主要為探討不同的MADN厚度製成的光電元件ITO/NPB/Alq3/MADN/LiF/Al的電性表現。我們利用導納頻譜中的寄生電阻概念，並觀測I-V曲線和元件的亮度效率等量測手法，得到MADN的厚度為5nm時的元件有最佳的表現。
　　第三部分，我們利用有機電洞阻擋材料MADN摻雜電子注入材料碳酸銣(Rb2CO3)作一電子傳輸層，形成ITO/NPB/Alq3/MADN: Rb2CO3/LiF/Al的元件結構，探討不同摻雜濃度對電致發光的表現影響，再用導納頻譜量測活化能、建立不同摻雜濃度的電子傳輸層的能帶變化圖。實驗結果發現，當摻雜濃度越高，活化能會隨之降低，代表載子注入能障降低了，但是33%的摻雜濃度讓注入能障降的太低反而使電子較難以傳輸進發光層，致使25%的元件表現比33%的元件好。最後將等效電阻、活化能、載子遷移率等參數，用數學公式的運算可以求得薄膜之載子濃度。這些參數對於OLED的科學研究和討論極為重要。
關鍵字：有機電激發光二極體、n型摻雜、導納頻譜、活化能

In this thesis, an n-type OLED with Rb2CO3 doped in MADN as electron transporting layer (ETL) is investigated. The equivalent circuit model of electron-only devices with incorporation of Rb2CO3 into MADN as ETL are successfully developed by applying temperature-dependence admittance spectroscopy measurement (ASM). Frequency response of the ETL is affected by environmental temperature, and the shifting of G/F peak can obtain activation energy. Fermi level will shift more toward vacuum level with the increasing of Rb2CO3 doping percentage, leading to decreased equivalent resistance of ETL, reduced electron injection barrier, and improved conductivity. Thus the maximum luminance of electroluminescent device enhanced from 15530 to 26694 cd/m2, the maximum luminance efficiency raised from 3.9 to 5.1 cd/A, and the operation voltage at 100 cd/m2 decreased from 5.4 to 4.2 V when 25% Rb2CO3 is doped into MADN as ETL. Meanwhile, if the Rb2CO3 doping concentration is exceed 25%, it would be too high to make the electron hard to inject to emitting layer, resulting in device decay. In addition, some significant physics parameters of organic materials such as parallel resistance, density of state, and carrier concentration are cable to be obtained via proper math models. It is useful for device researches and material analysis.

Keywords：OLED、n-type doping、admittance spectroscopy、activation energy

第一章　緒論 1
1-1前言 1
1-2有機電激發光二極體發展歷史 2
1-3文獻回顧 5
1-4研究動機 6
1-5研究架構 8
第二章 基礎理論 9
2-1 能帶理論 9
2-2 螢光理論 10
2-3 有機電激發光二極體之發光原理 13
2-4 OLED元件結構 15
2-4-1 單層結構 15
2-4-2 雙層式結構 15
2-4-3 三層式結構 15
2-4-4 多層式結構 15
2-5 OLED元件材料 17
2-5-1 電洞傳輸層材料 17
2-5-2 電洞注入層材料 17
2-5-3 電洞阻擋材料 18
2-5-4 電子傳輸材料及發光層主體材料 19
2-5-5 電子注入材料 20
2-5-6 電極 20
2-6 元件電流限制 21
2-6-1 電荷注入 21
2-6-2 電荷傳輸 22
2-7 導納頻譜原理 27
2-8 載子濃度推算 31
2-9光學能隙計算 32
第三章 實驗步驟與方法 33
3-1 有機電激發光元件製程分類 33
3-2真空熱蒸鍍系統設備 34
3-3實驗材料 36
3-4實驗詳細製程與操作方法 37
3-4-1基板前置處理之實驗步驟 37
3-4-2真空熱蒸鍍之實驗步驟 38
3-5 數據量測與分析 39
3-5-1單體沉積速率之測定 39
3-5-2 OLED之電流、電壓、亮度 39
3-5-3紫外光/可見光光譜儀分析 39
3-5-4 AC2量測HOMO 40
3-5-5 導納頻譜分析 40
第四章 實驗結果與討論 41
4-1導納頻譜模型的建立與分析 41
4-1-1 NPB薄膜之模型與分析 41
4-1-2 MADN薄膜之模型與分析 47
4-1-3 不同MADN厚度之頻譜分析 51
4-2電子傳輸層厚度最佳化 54
4-3 n型摻雜 OLED元件分析 60
4-3-1 n型摻雜 OLED元件電性量測 60
4-3-2 n型摻雜 OLED元件之導納頻譜分析 61
4-3-3 n型摻雜薄膜之載子濃度計算 78
第五章　結論與未來展望 80
5-1結論 80
5-2未來展望 81
參考文獻 82

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