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研究生:陳和謙
研究生(外文):Ho-Chien Chen
論文名稱:鍺量子點光電晶體暫態載子傳輸特性分析
論文名稱(外文):Characterization of carrier dynamics in Ge quantum dots through Ge quantum-dot MOSFETs using pulsed voltage technique
指導教授:李佩雯李佩雯引用關係郭明庭
指導教授(外文):Pei-Wen LiMing-Ting Kuo
學位類別:碩士
校院名稱:國立中央大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2015
畢業學年度:103
語文別:中文
論文頁數:95
中文關鍵詞:光電晶體鍺量子點暫態
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  鍺材料具有高載子遷移率及窄能隙等優點,搭配此材料製作的半導體元件,得以實現適用於波長1.55μm之光偵測器或是高速電晶體。
  本論文針對鍺量子點金氧半與單電洞電晶體,開發合適的高速脈波量測系統。由控制程式的設計,佐以高靈敏度的硬體配置,進行瞬時同步的脈波輸入和電氣訊號輸出。利用此量測系統,可透過改變脈波輸入時間、輸入電壓或脈波輸入元件端,觀察在不同輸入條件下,鍺量子點元件中瞬間開關/切換的暫態響應,進而了解鍺量子點元件的即時操作行為以及推論載子在鍺量子點元件內部的時變傳輸機制。
  量測結果顯示,鍺量子點光電晶體受到高速的閘極脈衝驅動後,會迅速進入深度空乏暫態,產生暫態過衝電流等與穩態截然不同的電流特性。且當脈衝電壓、溫度、閘介電層厚度、以及光照強度等條件發生改變時,元件在非平衡態下的瞬間少數載子數量有顯著變化,可明顯由鍺量子點光電晶體之暫態響應觀察到。反觀鍺量子點單電晶體或者無量子點的金氧半場效電晶體,皆未觀察到如光電晶體般奇特的暫態反應。
  深入探討上述的鍺量子點元件的載子傳輸機制,有助於相關元件的改良、設計,甚至利用其時變操作特性,進一步開發適合應用的上市電子產品。

In this thesis, we designed a high-speed pulse system for Ge QD MOS phototransistors and single hole transistors(SHT). With this measurement system, synchronization on voltage pulse input and current signal output measurement can be implemented. Consequently, dynamic current change happened in Ge QD electronic devices is studied in different input conditions such as pulse width and pulse voltage. Furthermore, the carrier dynamic transport mechanism is investigated.
Ge QD MOS phototransistors driven by high-speed gate voltage pulses would quickly go into transient deep depletion state, which shows an electrical behavior different from the thermal equilibrium states such as overshoot current. The quantity of transient non-equilibrium minor carriers in Ge QD MOS phototransistors have tremendous differences with various illumination power, pulse voltage, temperature and gate oxide thickness. Such transient response is only observable in Ge QD MOS phototransistors but not in MOSFETs without Ge QD and Ge QD single hole transistors.
Further studies on transient transportation of the Ge QD MOS phototransistors can provide helpful information for improvement and applications in the future.

中文摘要...................................................................i
英文摘要..................................................................ii
致謝..................................................................iii
目錄.....................................................................v
圖目錄..................................................................viii
表目錄..................................................................xiii

第一章、 簡介與研究動機....................................................1
第二章、 鍺量子點光電晶體製作方法與操作特性................................6
2-1 鍺量子點的形成方法與光學特性......................................6
2-2 鍺量子點光電晶體製作流程..........................................8
2-3 鍺量子點光電晶體操作機制.........................................13
2-3-1 浮點記憶體基本原理..........................................14
2-3-2 未照光狀態元件操作機制......................................15
2-3-3 照光狀態元件操作機制........................................15
第三章、 高速暫態電流量測系統架構設計.....................................18
3-1 電子元件暫態響應.................................................18
3-2 高速暫態電流量測系統.............................................20
3-2-1 硬體配置....................................................21
3-2-2 控制程式設計................................................22
3-2-3 系統功能實測................................................23
第四章、 鍺量子點光電晶體暫態特性量測與傳輸機制分析.......................27
4-1 電壓脈衝應力作用後之元件的電氣特性...............................27
4-1-1電壓脈衝應力作用後之無鍺量子點金氧半場效電晶體的電氣特性.....27
4-1-2電壓脈衝應力作用後之鍺量子點光電晶體的電氣特性...............29
4-1-3電壓脈衝應力作用後之單電洞電晶體的電氣特性...................32
4-2 鍺量子點光電晶體時變電流特性的調變參數...........................35
4-2-1 改變脈衝寬度和光功率對應之電流時變特性......................36
4-2-2 改變溫度和光功率對應之電流時變特性..........................41
4-2-3 改變閘極偏壓和光功率對應之電流時變特性......................46
4-2-4 改變閘極介電層厚度和光功率對應之電流時變特性................50
4-3 鍺量子點光電晶體暫態形成機制.....................................54
4-3-1金氧半電容的深度空乏.........................................54
4-3-2鍺量子點光電晶體的深度空乏暫態響應...........................55
4-4 自光電晶體時變電流探討鍺量子點近電感特性.........................59
4-4-1 RLC串聯電路之二階系統響應..................................59
4-4-2 入射光功率與鍺量子點電感相依特性............................61
4-4-3 溫度與鍺量子點電感相依特性..................................62
第五章、 總結與未來展望...................................................64
參考文獻.................................................................66
附錄一...................................................................69

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