臺灣博碩士論文加值系統

本論文中以電漿輔助式分子束磊晶系統生長氮化銦鎵薄膜，分別成長四個具有不同銦組成分的氮化銦鎵薄膜，銦組成分的變化為20%、40%、60%、80%，我們透用X光繞射、場效發射式掃描電子顯微鏡、光電導光譜、霍爾量測以及光激發螢光光譜來探討光學與電學特性，因此我們可以透過X光繞射來確認樣品的晶格常數、銦含量以及受應力的大小，從光激發螢光光譜和光電導光譜來發現能隙位置，用霍爾量測來觀察載子遷移率的變化。
在本論文的後半段我們進行快速熱退火的研究在溫度600℃時觀察氮化銦鎵樣品的光學和電學特性受熱退火的影響。低溫光激發螢光光譜在低溫20K獲得的光譜強度和光譜的半高寬來檢測從快速熱退火效果的主要影響，再搭配霍爾測量結果，可發現在隨著熱退火後的銦含量20％和40％我們發現了樣品的結晶品質已被提高。然而在氮化銦鎵薄膜較高銦含量的60%和80％組成分的晶體品質由於低分解溫度難以透過熱處理方法得到改善。一系列的實驗提供了一個有用的準則來實現氮化銦鎵使用快速熱退火讓晶體獲得改善。

In this study, we used molecular beam epitaxy system to grow InxGa1-XN thin film with different indium compositions from 20 to 80 % on sapphire substrate. We thoroughly by X-ray diffraction, scanning electron microscope, the photoconductive spectrum, Hall measurements and Photoluminescence spectroscopy to investigate the optical and electrical properties, therefore, we can confirm the size of the lattice parameters, the indium content and stressed by the X-ray diffraction, From the Photoluminescence and photoconductive spectra to discover the energy gap position to observe the changes in mobility by Hall measurements. After half of the study we performed rapid thermal annealing (RTA) at temperature of 600 ℃ and investigated RTA effect on the optical and electrical properties of InxGa1-XN samples. Combining Hall effect measurement results, we find the crystal quality of the samples with lower indium 20 % and 40 % compositions have been improved after RTA treatment. However, the crystal quality of InxGa1-XN films with higher indium 60% and 80 % compositions is difficult to be improved by RTA method due to low decomposition temperature. A series of experiments provide a useful guideline to achieve crystal improvement of InxGa1-XN using RTA.

中文摘要 i
Abstract ii
誌謝 iii
目錄 iv
圖目錄 vi
表目錄 x
第一章 緒論 1
第二章 氮化銦鎵材料相關理論 3
2-1分子束磊晶系統 3
2-2三族氮化物晶體結構 5
2-3基板的選擇 9
2-4高銦氮化銦鎵 11
2-5成長高銦氮化銦鎵薄膜 12
2-6低溫氮化銦鎵薄膜緩衝層 15
第三章 量測技術與原理 17
3-1 X光繞射 17
3-1-1 X光的產生與X光繞射原理 17
3-1-2布拉格定律 20
3-1-3高解析度X光繞射儀 21
3-1-4 ω/2θ scan 23
3-1-5 繞射幾何 24
3-1-6 倒置空間譜圖(reciprocal space mapping) 27
3-2場效發射式掃描電子顯微鏡 (FE-SEM) 31
3-3原子力顯微鏡 (AFM) 32
3-4光電導 (photoconductivity, PC) 34
3-4-1光電導之相關理論 35
3-5快速熱退火( Rapid Thermal Annealing ) 36
3-6光激發螢光光譜 (photoluminescence, PL) 37
3-6-1光激發螢光光譜相關原理 37
3-6-2 光激發光光譜實驗系統 39
3-7霍爾效應 (photocurrent spectroscopy ) 40
3-7-1霍爾效應原理 40
3-7-2 Van der Pauw 量測法 43
3-7-3 霍爾量測實驗系統 46
第四章 實驗結果與討論 47
4-1 X光繞射 47
4-1-1 ω-2θ scan 47
4-1-2 倒置晶格空間譜圖分析 (RSM) 48
4-2 場效發射式掃描電子顯微鏡 (FE-SEM) 53
4-3 原子力顯微鏡 (AFM) 55
4-4光激發螢光光譜 (PL) 57
4-5快速熱退火( Rapid Thermal Annealing ) 65
第五章 結論 77




圖目錄
圖1-1常見的半導體材料能隙及晶格常數分佈圖 2
圖2-1分子束磊晶運作示意圖 4
圖2-2 分子束磊晶系統圖 5
圖2-3 InGaN結構圖 5
圖2-4 三族氮化物 (a) wurtzite 結構 (b) zincblende 結構 7
圖2-5 最密堆積的位置 8
圖2-6 烏采(wurtzite)結構排列圖 8
圖2-7 閃鋅(zincblende)結構排列圖 9
圖2-8成長不同銦含量氮化銦鎵SEM圖，(a)~(c)為成長在InN template上；(d)~(f) 為成長在低溫氮化銦鎵緩衝層 12
圖2-9成長不同銦含量氮化銦鎵之XRD-2theta 13
圖2-10為成長不同銦含量氮化銦鎵之SEM與RHEED圖 14
圖2-11為成長不同銦含量氮化銦鎵之PL圖 14
圖2-12不同低溫氮化銦鎵緩衝層厚度所成長出的薄膜SEM，(a)沒有低溫氮化銦鎵緩衝層(b)1nm、(c)3nm、(d)10nm、(e)30nm 15
圖2-13成長在不同低溫氮化銦鎵緩衝層厚度的氮化銦鎵薄膜PL訊號 16
圖3-1為X光連續光譜 19
圖3-2 電子躍遷產生特性輻射示意圖 19
圖3-3布拉格繞射圖 20
圖3-4、高解析度X光繞射儀架構圖 21
圖3-5 Siemens D5000高解析度X光繞射儀 22
圖3-6 ω/2θ scan量測圖 24
圖3-8繞射幾何 (a)對稱繞射 (b)非對稱繞射 26
圖3-9斜對稱繞射 26
圖3-9倒置空間譜圖的掃描方式 28
圖3-10倒晶格向量與ωscan、ω/2θscan的幾何關係圖 28
圖3-11氮化鎵的倒置晶格點可量測區域示意圖 29
圖3-12實際空間尺寸與倒置空間尺寸的關係 30
圖3-13 SEM儀器示意圖 31
圖3-14 AFM原理示意圖 32
圖3-15不同的光電子機制（a）本質半導體，電子由價電帶被激發至導電帶（b）非本質半導體，電子由施體能階被激發至導電帶（c）非本質半導體，電子由價電帶被激發至受體能階。 34
圖3-16本論文所使用的RTA機台 37
圖3-17電子電洞對的吸收(a)及五種產生復合躍遷機制(b)~(f) 38
圖3-18光激發螢光光譜系統架構圖 39
圖3-19霍爾效應之示意圖(a)電洞(b)電子 40
圖3-20常見的Hall bar幾何圖案 42
圖3-21 Van der Pauw 接點位置與幾何形狀之示意圖 43
圖3-22電阻率量測示意圖 45
圖3-23霍爾電壓量測示意圖 45
圖3-24直流霍爾量測系統示意圖 46
圖4-1氮化銦鎵薄膜樣品ω-2θ scan繞射譜圖 47
圖4-1 In0.2Ga0.8N之非對稱面(105)倒置空間譜圖 50
圖4-2 In0.4Ga0.6N之非對稱面(105)倒置空間譜圖 51
圖4-3 In0.6Ga0.4N之非對稱面(105)倒置空間譜圖 51
圖4-4 In0.8Ga0.2N之非對稱面(105)倒置空間譜圖 52
圖4-5 InGaN在倒置空間譜圖位置 52
圖4-6表面SEM (a)In0.2Ga0.8N (b) In0.4Ga0.6N (c) In0.6Ga0.4N (d) In0.8Ga0.2N 53
圖4-7橫截面SEM (a)In0.2Ga0.8N (b) In0.4Ga0.6N (c) In0.6Ga0.4N (d) In0.8Ga0.2N 54
圖4-8不同銦含量的氮化銦鎵樣品之AFM圖 56
圖4-9樣品A的變溫PL光譜 58
圖4-10樣品B的變溫PL光譜 58
圖4-11樣品C的變溫PL光譜 59
圖4-12樣品D的變溫PL光譜 59
圖4-13樣品A的PL與PC光譜比較 60
圖4-14樣品B的PL與PC光譜比較 61
圖4-15樣品C的PL與PC光譜比較 61
圖4-16樣品D的PL與PC光譜比較 62
圖4-17樣品A變頻PC光譜 63
圖4-18樣品B變頻PC光譜 63
圖4-19樣品C變頻PC光譜 64
圖4-20樣品D變頻PC光譜 64
圖4-21 InxGa1-XN薄膜在不同RTA處理時間的PL峰值能量 67
圖4-22 InxGa1-XN薄膜在不同RTA處理時間的PL光強度 67
圖4-23 InxGa1-XN薄膜在不同RTA處理時間的PL半高寬 68
圖4-24 InxGa1-XN薄膜在不同RTA處理時間的遷移率 68
圖4-25樣品A在RTA 600℃不同退火時間的遷移率 69
圖4-26樣品A在RTA 600℃不同退火時間的PL光強度 70
圖4-27樣品A在RTA 600℃不同退火時間的PL半高寬 70
圖4-28樣品B在RTA 550℃不同退火時間的遷移率 71
圖4-29樣品B在RTA 550℃不同退火時間的PL光強度 72
圖4-30樣品B在RTA 550℃不同退火時間的PL半高寬 72
圖4-31樣品C在RTA 450℃不同退火時間的遷移率 73
圖4-32樣品C在RTA 450℃不同退火時間的PL光強度 74
圖4-33樣品C在RTA 450℃不同退火時間的PL半高寬 74
圖4-34樣品D在RTA 400℃不同退火時間的遷移率 75
圖4-35樣品D在RTA 400℃不同退火時間的PL光強度 76
圖4-36樣品D在RTA 400℃不同退火時間的PL半高寬 76


表目錄
表2-1基板與氮化銦之材料晶格常數與熱膨脹係數關係圖 9
表2-2常見成長三族氮化物的基板參數表 10
表4-1 X-ray量測中所得知的銦組成分 48
表4-1為氮化銦與氮化鎵之波森比與其晶格常數 49
表4-2四個氮化銦鎵之倒置空間譜圖數據整理 50

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