臺灣博碩士論文加值系統

我們利用同步輻射光電子能譜探討Al/GaAs(001)介面間的電子結構變化。藉由光電子能譜可知此實驗純淨p-GaAs(001)表面混合了GaAs(001)-2×4和GaAs(001)-4×6兩種重構表面。初始Al沉積在p-GaAs(001)為三維島狀成長。當Al蒸鍍在純淨GaAs上，Al會轉移負電荷給GaAs(001)-2×4的頂層As-As dimer，以及和表層的Ga之間產生Ga-Al鍵結。從介面能階圖可知，Al/p-GaAs(001)能帶偏移幾乎可以忽略，可得Al/p-GaAs(001)的蕭基能障(Schottky barrier height, SBH)為0.55 eV。

摘 要 i
Abstract ii
致謝 iii
目錄 iv
表目錄 vi
圖目錄 vii
第一章 簡介 1
1-1研究動機 1
1-2金屬-半導體接觸 2
1-3砷化鎵(GaAs)介紹 5
第二章 實驗方法 8
2-1 實驗原理 8
2-1.1 光電子能譜技術(photoelectron spectroscopy) 8
2-1.2 非彈性平均自由徑 12
2-1.3 價帶能譜 14
2-1.4 核層能譜 16
2-2 實驗系統介紹 17
2-2.1 超高真空系統 17
2-2.2 半球形光電子能譜分析儀 20
2-2.3 蒸鍍槍 22
2-3 同步輻射光源介紹 24
2-3.1 同步加速器光源簡介 24
2-3.2 實驗使用的光源 : BL08A-LSGM 光束線 26
2-4 實驗準備 29
2-4.1 GaAs樣品準備 29
2-4.2 真空抽氣過程 30
2-4.3 蒸鍍材料 35
第三章 結果與討論 37
3-1 價帶能譜(valence-band spectra) 37
3-2核層能譜(Core-level spectra) 42
3-2.1 As 3d和Ga 3d核層能譜 42
3-2.2 Al 2p核層能譜 53
3-3能階圖(Band diagram) 55
第四章 結論 58
參考文獻 59

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