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研究生:林柏任
研究生(外文):Bo-Ren Lin
論文名稱:III- 族氮化物金氧半電晶體於不同基板之特性
論文名稱(外文):Characteristics of III- Nitride Metal Oxide Semiconductor Transistors on Different Substrates
指導教授:彭隆瀚
口試委員:王維新賴志明黃玉林蔡宛卲
口試日期:2015-07-30
學位類別:碩士
校院名稱:國立臺灣大學
系所名稱:光電工程學研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2015
畢業學年度:103
語文別:中文
論文頁數:92
中文關鍵詞:高電子遷移率電晶體
外文關鍵詞:HEMT
相關次數:
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本論文主要探討兩大部分,第一部分為GaN/AlGaN MOS-HEMT,第二部分為矽基板閘極掘入式GaN/AlGaN MOS-HEMT,首先將實驗中所需之光致電化學(PEC)氧化以及歐姆接觸等參數進行確認,接著是對光致電化學對元件特性的影響進行觀察。
GaN/AlGaN MOS-HEMT的部分,首先在對不同氧化層的生長方式觀察到以PEC方式生長氧化層的元件相較於電漿輔助型原子層沉積(PE-ALD)方式,開關比的部分由7個數量級提升到8個數量級以上,閘極漏電流有2個數量級的優勢。接著在不同PEC氧化層厚度觀察到,隨著PEC的氧化層厚度增加,閾值電壓先向負方向移動後再向正方向移動到-2V,推測閾值電壓可能與PEC氧化層/AlGaN介面狀態有關或與AlGaN與氧化層之間的應力有關。
矽基板閘極掘入式AlGaN/GaN MOS-HEMT的部分,吾人利用光致電化學(PEC)方式生長氧化層,搭配本實驗室的電漿輔助型原子層沉積製作出良好的鈍化層,利用上述參數與閘極掘入(Gate recessed)手段,可製作出增強型元件。閾值電壓的部分從-4V提升到1.5V,然而轉導的部分卻下降約40%,推測利用閘極掘入使通道下方2DEG呈現空乏,使得元件整體串聯電阻上升,造成轉導特性下降。


This work is focused on the use of the photoelectrochemical oxidation (PEC oxidation) method on both AlGaN/GaN on sapphire substrate and gate recessed AlGaN/GaN on silicon substrate to realize metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs).
First, the characteristics of PEC oxide layer and plasma enhanced atomic layer deposition oxide layer are compared. The measured results show that, with PEC oxidation, the current on/off ratio is increased from 7 to 8 order of magnitude and the gate leakage current is decreased almost 2 order of magnitude. Then, the effect of different PEC oxide thicknesses to MOS-HEMT performance are considered. We found that with the increasing of the thickness of PEC oxide, the threshold voltage is decreased first then shifted to -2V, which is related to the interface state of the PEC oxide and the AlGaN layer or the strain of the AlGaN layer induced by the PEC oxide.
The measured results of gate recessed AlGaN/GaN MOS-HEMTs with PEC oxide layer and PE-ALD passivation layer show that the gate recess method can effectively shift the threshold voltage from -4 V to 1.5 V. However, the transconductance is decreased about 40%.


第一章 緒論 1
1.1 簡介 1
1.2 研究動機與目的 5
1.3 論文內容概述 7
第二章 AlGaN/GaN MOS-HEMT理論介紹 9
2.1 AlGaN/GaN極化現象與二維電子氣形成原理 9
2.1.1 自發極化效應 9
2.1.2 壓電極化效應 11
2.1.3 二維電子氣形成機制 12
2.2 晶格面蝕刻法 17
2.3 金屬接觸原理 19
2.3.1 歐姆接觸原理 19
2.3.2 傳輸線模型原理 21
2.4 光致電化學氧化法原理 24
2.5 原子層沉積模式概述 26
2.5.1 Thermal ALD 27
2.5.2 Radical enhanced ALD 28
2.5.3 Direct plasma ALD 29
2.3.4 Remote plasma ALD 30
2.6 電性量測架構 31
第三章 AlGaN/GaN MOS-HEMT的製程技術 33
3.1 元件表面清潔 34
3.2 元件高臺隔離 36
3.3 晶格面蝕刻法 37
3.4 歐姆接觸(傳輸線模型量測用) 38
3.5 光致電化學氧化法 39
3.6 AlGaN/GaN MOS-HEMT 製作流程 41
3.6.1 元件高臺隔離 41
3.6.2 PEC源極汲極保護層及製作網格電極 43
3.6.3 PEC閘極氧化層製作 47
3.6.4 歐姆接觸 48
3.6.4 原子層沉積 50
3.6.5 閘極金屬沉積 51
3.7 閘極掘入式AlGaN/GaN MOS-HEMT製作流程 53
第四章 AlGaN/GaN MOS-HEMT直流量測 55
4.1 傳輸線(TLM)模型量測 56
4.2 光致電化學法(PEC)參數之研究 59
4.3 不同閘極氧化物生長方式之研究 60
4.4 藍寶石基板不同光致電化學(PEC)氧化層厚度對AlGaN/GaN MOS-HEMT影響的直流量測 66
4.5 矽基板AlGaN/GaN MOS-HEMT的直流量測 72
4.6 矽基板閘極掘入式AlGaN/GaN MOS-HEMT直流量測與分析 77
第五章 結論與未來展望 85
參考文獻 87


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