|
[1] N. O. Sokal and A. D. Sokal, “Class E—A new class of high-efficiency tuned single-ended switching power amplifiers,” IEEE J. Solid-State Circuits, vol. SC-10, no. 6, pp. 168–176, Jun. 1975. [2] Andrei Grebennikov and Nathan O. Sokal “Switch-mode RF Power amplifier” [3] M. Acar, A. J. Annema, and B. Nauta, “Analytical design equations for Class-E power amplifiers,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 54, no. 12, pp. 2706–2717, Dec. 2007 [4] C. P. Avratoglou, N. C. Voulgaris, and F. I. Ioannidou, “Analysis and design of a generalized Class E tuned power amplifier,” IEEE Trans. Circuits Syst., vol. CAS-36, no. 8, pp. 1068–1079, Aug. 1989. [5] F. H. Raab and N. O. Sokal, “Transistor power losses in the Class E tuned power amplifier,” IEEE J. Solid-State Circuits, vol. SC-13, no. 6, pp. 912–914, Dec. 1978. [6] A. Mazzanti, L. Larcher, R. Brama, and F. Svelto, “Analysis of reliability and power efficiency in cascode Class-E PAs,” IEEE J. Solid-State Circuits, vol. 41, no. 5, pp. 1222–1229, May 2006. [7] D. J. Kessler and M. K. Kazimierczuk, “Power losses and efficiency of class E power amplifiers at any duty ratio,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 51, no. 9, pp. 1675–1689, Sep. 2004. [8] F. H. Raab and N. O. Sokal, “Transistor power losses in the class E tuned power amplifier,” IEEE Journal of Solid-State Circuits, vol. SC-13, NO. 6, pp. 912–914, Dec. 1999. [9] M. Kazimierczuk, “Effects of the collector current fall time on the class E tuned 94 power amplifier,” IEEE Journal of Solid-State Circuits, vol.SC-18, no. 2, pp. 181–193, Apr. 1983. [10] C. P. Avratoglou, N. C. Voulgaris, and F. I. Ionannidou, “Analysis and design of a generalized class E tuner power amplifier,” IEEE Transactions on Circuits and Systems, vol. 36, NO. 8, pp. 1068–1079, Apr. 1989. [11] P. Alinikula, K. Choi, and S. I. Long, “Design of class E power amplifier with nonlinear parasitic output capacitance,” IEEE Transactions on Circuits and Systems, vol. 46, no. 2, pp. 114–119, Feb. 1990 [12] D. K. Choi and S. I. Long, “The effect of transistor feedback capacitance in class–E power amplifiers,” IEEE Transactions on Circuits and Systems-I: Fundamental Theory and Applications, vol. 50, no. 12, pp. 1556–1559, Dec. 2003 [13] D. K. Choi and S. I. Long, “A physically based analytic model of FET class E power amplifiers-designing for maximum PAE,” IEEE Trans. Microw. Theory Tech., vol. 47, no. 9, pp. 1712–1720, Sep. 1999. [14] M. J. Chudobiak, “The use of parasitic nonlinear capacitors in class E amplifiers,” IEEE Transactions on Circuits and Systems, vol. 41, no.12, pp. 941–944, Apr. 1994 [15] To-Po Wang and Ji-Hong Ke and Cheng-Yu Chiang, “A high-Psat high-PAE fully-integrated 5.8-GHz power amplifier in 0.18-um CMOS,” in 2011 EDSSC, Nov. 2011. [16] Lin, G.C. and Lin, Z.M., “A 5.8 GHz Fully-Integrated Power Amplifier for 802.11a WLAN System,” in 2007 IEEE EDSSCC, Dec. 2007. [17] Yuki Yamashita, Daisuke Kanemoto, Haruichi Kanaya, Ramesh K. Pokharel and Keiji Yoshida ” A CMOS Class-E Power Amplifier of 40-% PAE at 5 GHz for 95 Constant Envelope Modulation System”, Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on [18] Yuki Yamashita, Daisuke Kanemoto, Haruichi Kanaya, Ramesh K. Pokharel and Keiji Yoshida“A 5-GHz Fully Integrated CMOS Class-E Power Amplifier Using Biasing Technique with Cascaded Class-D Drivers”, Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on. [19] C. Lu , A. V. H. Pham , M. Shaw and C. Saint "Linearization of CMOS broadband power amplifiers through combined multigated transistors and capacitance compensation", IEEE Trans. Microw. Theory Tech., vol. 55, no. 11, pp.2320 -2328, 2007. [20] Hwann-Kaeo Chiou, Member, IEEE, Hua-Yen Chung, Student Member, IEEE, Yuan-Chia Hsu, Da-Chiang Chang, Member, IEEE, and Ying-Zong Juang, Member, IEEE , “Broadband and High-Efficiency Power Amplifier that Integrates CMOS and IPD Technology”, IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, VOL. 3, NO. 9, SEPTEMBER 2013. [21] Ockgoo Lee, Student Member, IEEE, Jeonghu Han, Member, IEEE, Kyu Hwan An, Student Member, IEEE, Dong Ho Lee, Member, IEEE, Kun-Seok Lee, Student Member, IEEE, Songcheol Hong, Member, IEEE, and Chang-Ho Lee, Senior Member, IEEE , “A Charging Acceleration Technique for Highly Efficient Cascode Class-E CMOS Power Amplifiers”, IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 45, NO. 10, OCTOBER 2010. [22] Jian Chen, Ritesh Bhat, and Harish Krishnaswamy, “A Compact Fully Integrated High-Efficiency 5GHz Stacked Class-E PA in 65nm CMOS based on Transformer-based Charging Acceleration”, Compound Semiconductor 96 Integrated Circuit Symposium (CSICS), 2012 IEEE. [23] P. Haldi , D. Chowdhury , P. Reynaert , G. Liu and A. M. Niknejad “A 5.8 GHz 1 V linear power amplifier using a novel on-chip transformer power combiner in standard 90 nm CMOS”, IEEE J. Solid-State Circuits, vol.43,no.5,pp.1054-1063, May 2008. [24] H. Solar , R. Berenguer , I. Adin , U. Alvarado and I. Cendoya "A fully integrated 26.5 dBm CMOS power amplifier for IEEE 802.11a WLAN standard with on-chip "power inductors"", IEEE MTT-S Int. Microwave Symp. Dig., pp.1875 -1878, 2006. [25] To-Po Wang and Ji-Hong Ke and Cheng-Yu Chiang, “A high-Psat high-PAE fully-integrated 5.8-GHz power amplifier in 0.18-um CMOS,” in 2011 EDSSC, Nov. 2011. [26] C. Lu , A. V. H. Pham , M. Shaw and C. Saint "Linearization of CMOS broadband power amplifiers through combined multigated transistors and capacitance compensation", IEEE Trans. Microw. Theory Tech., vol. 55, no. 11, pp.2320 -2328, 2007. [27] Cuong Huynh, Member, IEEE, and Cam Nguyen, Fellow, IEEE , “New Technique for Synthesizing Concurrent Dual-Band Impedance-Matching Filtering Networks and 0.18- m SiGe BiCMOS 25.37-GHz Concurrent Dual-Band Power Amplifier” IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 61, NO. 11, NOVEMBER 2013 [28] Zhisheng Li, Guy Torfs, Johan Bauwelinck, Member, IEEE, Xin Yin, Member, IEEE, Jan Vandewege, Member, IEEE, Christophe Van Praet, Peter Spiessens, Member, IEEE, Huub Tubbax, and Frederic Stubbe, Member, IEEE, “A 2.45-GHz +20-dBm Fast Switching Class-E Power Amplifier With 43% PAE 97 and a 18-dB-Wide Power Range in 0.18-μm CMOS”, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS, VOL. 59, NO. 4, APRIL 2012. [29] D. Sira, P. Thomsen, and T. Larsen, “Output power control in Class-E power amplifiers”, IEEE Microw. Wireless Compon. Lett., vol. 20, no. 4, pp. 232–234, Apr. 2010. [30] Ville Saari, Pasi Juurakko, Jussi Ryynanen and Kari Halonen, “lntegrated 2.4 GHz Class-E CMOS Power Amplifier”, Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE. [31] Su Jie, et al, “A 2.4 GHz High Efficient Monolithic Class E Power Amplifier”, Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia), pp. 271 - 274, 22-24 Sept. 2010. [32] P. Reynaert, “A 2.45-GHz 0.13-μm CMOS PA with parallel amplification,” IEEE J. Solid-State Circuits, vol. 42, no. 3, pp. 551–562, Mar. 2007. [33] Seung Hun Ji, Gyu Seok Hwang, Choon Sik Cho, Jae W. Lee and Jaeheung Kim “836 MHz/1.95GHz Dual-Band Class-E Power Amplifier Using Composite Right/Left-Handed Transmission Lines”, Microwave Conference, 2006. 36th European. [34] Hyun Jin Yoo, Kang Hyuk Lee, Hyuk Jun Oh, and Yun Seong Eo “A Fully Integrated 2.4/3.4 GHz Dual-Band CMOS Power Amplifier with Variable Inductor”, Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European. [35] Mohammad Reza Ghajar, Slim Boumaiza “Concurrent Dual Band 2.4/3.5GHz Fully Integrated Power Amplifier in 0.13μm CMOS Technology”, Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European. 98 [36] Ki Young Kim, Student Member, IEEE, Woo Young Kim, Student Member, IEEE, Hyuk Su Son, Student Member, IEEE, Inn Yeal Oh, Member, IEEE, and Chul Soon Park, Senior Member, IEEE ”A Reconfigurable Quad-Band CMOS Class E Power Amplifier for Mobile and Wireless Applications”, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 21, NO. 7, JULY 2011. [37] D. K. Choi and S. I. Long, “A physically based analytic model of FET class-E power amplifiers—designing for maximum PAE,” IEEE Trans. Microw. Theory Tech., vol. 47, no. 9, pp. 1712–1720, Sep. 1999. [38] P. Reynaert and M. S. J. Seyaert, “A 1.75-GHz polar modulated CMOS RF power amplifier for GSM-EDGE,” IEEE J. Solid-State Circuits, vol.40, no. 3, pp. 2598–2608, Mar. 2005. [39] 曾奕恩,應用於無線通訊之瓦等級變壓器功率結合式 CMOS 功率放大器之 研製,國立台灣大學電信工程所碩士論文,2014 年 7 月 [40] H. Zhang, H. Gao, and G. P. Li, “Broad-band power amplifier with a novel tunable output matching network,” IEEE Trans. Microw. Theory Techn., vol. 53, no. 11, pp. 3606–3614, Nov. 2005. [41] L. Yumin, D. Peroulis, S. Mohammadi, and L. P.B.Katehi, “A MEMS reconfigurable matching network for a class AB amplifier,” IEEE Microw. Wireless Compon. Lett., vol. 13, no. 10, pp. 437–439, Oct. 2003. [42] W. C. E. Neo, Y. Lin, X. D. Liu, L. C. N. D. Vreede, L. E. Larson,M. Spirito, M. J. Pelk, K. Buisman, A. Akhnoukh, A. D. Graauw, and L. K. Nanver, “Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks,” IEEE J. Solid- State Circuits, vol. 41, no. 9, pp. 2166–2176, Sep. 2006.
|