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研究生:王彥其
研究生(外文):Yen-chi Wang
論文名稱:利用分子束磊晶法成長硒化鎵摻鋅薄膜之導電性改善研究
論文名稱(外文):Improvement of conductivity in GaSe:Zn thin films grown by MBE
指導教授:楊祝壽
指導教授(外文):Chu-shou Yang
口試委員:楊祝壽
口試委員(外文):Chu-shou Yang
口試日期:2015-07-28
學位類別:碩士
校院名稱:大同大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2015
畢業學年度:103
語文別:英文
論文頁數:37
中文關鍵詞:導電性分子束磊晶摻雜二維結構硒化鎵穿透式電子顯微鏡
外文關鍵詞:conductivityMBEdoped2D structureGaSeTEM
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在本篇論文中,利用電漿輔助式分子束磊晶法於藍寶石(c-sapphire)基板上成長高導電性的硒化鎵(GaSe),其成長方式是利用鋅金屬作為摻雜元素,摻雜的材料溫度分別為150、170、200和230度。藉由反射式高能量電子束繞射(RHEED)圖譜作為成長時的即時監控,以及利用X光繞射量測(XRD)、拉曼散射光譜(Raman scattering)、掃描式電子顯微鏡(SEM)、穿透式電子顯微鏡(TEM)、四點探針等量測,探討磊晶層的結構、光學及電學特性。隨著鋅原子摻雜濃度增加,發現成長速率將近一倍,意味著其成長機制將不同於凡得瓦磊晶。在拉曼量測中,可以看到兩個很強的縱向震盪訊號分別是A11g /A21g,以及兩個較弱的橫向震盪訊號分別為E' (TO) / E'' (LO)。當微量摻雜鋅時,E'' (LO)突然消失。然而,隨著鋅的通量增加,具有相同於E'' (LO)聲子能量再次出現,而此聲子能量與ZnSe (LO)吻合。從X光繞射量測和拉曼散射光譜證據中顯示硒化鋅的存在。從掃描式電子顯微鏡中發現隨著鋅的材料溫度上升,表面開始出現顆粒形狀的特殊圖樣,這也說明摻入不同的材料會破壞硒化鎵的表面形貌。從穿透式電子顯微鏡中得知摻雜鋅後變快的成長速度導致樣品中出現差排等缺陷,且在接面處也比較容易生成三硒化二鎵(Ga2Se3)。在未破壞凡得瓦結構特性下,得到最好的樣品導電率為1.6×10-4 (Ω×cm)-1,相較於未摻雜的硒化鎵提高三個數量級。
In this study, high-conductivity GaSe:Zn thin films grown on a c-sapphire substrate are achieved using molecular beam epitaxy (MBE). The thin films are monitored by reflection high energy electron diffraction (RHEED). The streaky RHEED patterns which imply the growing thin film has high crystal quality along the [0001] azimuth are observed after 5 minutes since start growing. As the zinc atom content increasing in GaSe, the growth rate increases nearing twice than undoped GaSe, which implies that its growth mechanism is different from undoped GaSe. There are several shifts of peak (004) in X-ray diffraction (XRD) spectra, implying that the exceeding zinc content would induce the formation of ZnSe crystal and effect on lattice constant in GaSe:Zn condition. In Raman measurements, at lightly doped condition, E''(LO) mode suddenly disappeared. However, with increasing TZn, E''(LO) mode appeared again and this phonon energy is the same as ZnSe (LO). According to the previous suggestion of the exist ZnSe, this peak is assign to ZnSe (LO). The layer-by-layer structure is directly observed by high resolution transmission electron microscopy (HRTEM). Conductivity of the best sample is 1.6×10-4 (Ω×cm)-1 measured by Four Point Prober and flexible sample B is taken from substrate by general tape.
致謝 I
摘要 II
Abstract III
Table of contents IV
List of Figures VI
List of Tables VII
Chapter I Introduction 1
Chapter II Experience 3
2-1 Experiment instrument 3
2-2 Growth parameters of GaSe:Zn thin films with variable Zn flux 6
Chapter III Characterization of GaSe:Zn thin film 9
3-1 Reflection High Energy Electron Diffraction (RHEED) 9
3-2 X-Ray Diffraction (XRD) 11
3-3 Micro-Raman Scattering spectrum 15
3-4 Scanning Electron Microscopy (SEM) 17
3-5 Transmission Electron Microscopy (TEM) 19
3-6 Four Point Probe technique 24
Conclusion 26
Reference 27
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