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研究生:劉永強
研究生(外文):Young-Chiang Liu
論文名稱:氧化鎳薄膜的製備與分析
論文名稱(外文):Preparation and characterization of nickel oxide films
指導教授:林烱暐
指導教授(外文):Chiung-Wei Lin
口試委員:林烱暐
口試委員(外文):Chiung-Wei Lin
口試日期:2015-07-22
學位類別:碩士
校院名稱:大同大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2015
畢業學年度:103
論文頁數:73
中文關鍵詞:鎳離子缺陷含氧量氧化鎳氧間隙
外文關鍵詞:ionic nickel defectoxygen contentNiOoxygen interstitial
相關次數:
  • 被引用被引用:3
  • 點閱點閱:231
  • 評分評分:
  • 下載下載:1
  • 收藏至我的研究室書目清單書目收藏:0
化學當量比狀態下的氧化鎳為絕緣體,但氧化鎳會受鎳缺陷或氧間隙的影響改變其電性及光學性。本研究藉由射頻磁控濺鍍系統,使用氧化鎳靶搭配不同的電漿功率、基板溫度、含氧量及沉積後熱處理等條件,製備不同性質的氧化鎳薄膜,以探討氧化鎳薄膜的鎳缺陷及氧間隙。並將氧化鎳薄膜製備為二極體,驗證本實驗製備的氧化鎳薄膜具有半導體特性。實驗結果顯示透過摻雜或沉積後熱處理明顯的改變電性及光學性。當含氧量增加,提升了氧化鎳薄膜的導電性並降低了穿透率,經過沉積後熱處理,氧化鎳薄膜的導電性明顯降低,而穿透率明顯提升。不同含氧量環境下沉積的氧化鎳薄膜所製備的二極體皆具有P型半導體特性。100%含氧量所製備的氧化鎳薄膜二極體具有最低的串聯電阻3.82x101,含氧量的增加,提升了氧化鎳薄膜二極體在順向偏壓時所能產生的電流。
The stoichiometric NiO is an insulator, but the electric and optical properties of NiO were changed by effect of ionic nickel defect or oxygen interstitial. In this study, nickel defective and oxygen interstitial of NiO thin film were discussed from different properties of NiO thin films, which was fabricated by NiO target with conditions of various RF power, substrate temperature, oxygen content, post-deposition annealing by RF magnetron sputtering. In this experiment, we fabricated NiO films has semiconductor characteristics were confirmed by NiO diodes. The experimental results reveal that clear to change electric and optical properties as doping or post- deposition annealing. The conductivity of NiO thin films increases and the transmittance of NiO thin films decreases as oxygen content is increased, the conductivity of NiO thin films decreases and the transmittance of NiO thin films increases with post-deposition annealing. The NiO diodes has P-type semiconductor characteristics were fabricated from the NiO thin films were deposited in various oxygen content environment. The lowest Rs of the NiO thin film diode of 100% oxygen content is 3.82 x101, the current of NiO thin film diode at forward bias voltage increases as oxygen content is increased.
Acknowledgments I
Chinese Abstract II
English Abstract III
Table of Contents IV
List of Tables VI
List of Figures VII
Chapter 1 Introduction 1
1.1 Introduction 1
1.2 Motivation of Research 3
1.3 Framework of Thesis 4
Chapter 2 Basic Theory 5
2.1 PN Device Theory 5
2.2 Positive and Negative Bias Voltage 7
2.3 Series Resistance 9
2.4 The Band Gap is Calculated by Transmittance 11
Chapter 3 Experimental Method 13
3.1 Experimental Process 13
3.2 Experimental Instrument 15
Chapter 4 Results and Discussion 19
4.1 The Conduction Mechanisms of NiO Carrier 19
4.2 The Effect of RF Power for NiO Thin Films 21
4.3 The Effect of Substrate Temperature Rise for NiO Thin Films 23
4.4 The Effect of Oxygen Content for NiO Thin Films 28
4.5 The Effect of Post-Deposition Annealing for NiO Thin Films 40
4.6 The NiO Thin Films Diode 53
Chapter 5 Conclusions 56
References 58
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