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研究生:林威良
研究生(外文):Wei-Lang Lin
論文名稱:利用二元與三元化合物交替成長法成長硒化銅鋅錫薄膜
論文名稱(外文):Growth and Characterization of Cu2ZnSnSe4 Thin Films by Binary and Ternary Compound Alternating Methods
指導教授:楊祝壽
指導教授(外文):Chu-Shou Yang
口試委員:楊祝壽
口試委員(外文):Chu-Shou Yang
口試日期:2015-07-28
學位類別:碩士
校院名稱:大同大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2015
畢業學年度:103
語文別:中文
論文頁數:31
中文關鍵詞:前驅物分子束磊晶硒化銅鋅錫硒化退火
外文關鍵詞:selenideprecursorMBECZTSeannealing
相關次數:
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在硒化銅銦鎵中,利用前驅物來進行三階段製程的方式,已經行之有年,為了能夠得到更好品質與效率的硒化銅鋅錫薄膜,參考了硒化銅銦鎵的三階段製程方式後,設計出二元與三元化合物交替成長法來進行實驗。
在二元堆疊法中,我們將討論不同堆疊順序對硒化銅鋅錫磊晶的影響,由實驗可以知道當堆疊順序為硒化鋅/硒化錫/硒化銅/鉬玻璃,能產生物性較好的硒化銅鋅錫薄膜,拉曼光譜可以清楚地觀察到 171、192、231、245 cm-1 這四個硒化銅鋅錫的峰值。另外利用三元堆疊法中,對堆疊時間比的差異和二次相的改善進行探討。在堆疊時間硒化銅鋅(CZS)與硒化銅錫(CTS)比值≦1的樣品組中,由拉曼光譜圖得知隨著堆疊時間比例的不同,能控制硒化銅鋅錫的化學組成比。隨著CZS的堆疊時間比例上升,組成比由原本的硒化銅錫慢慢轉變成硒化銅鋅錫;另外也成功利用基板溫度的調變,成功抑制二次相硒化銅的產生,成長出品質良好的硒化銅鋅錫。由X射線繞射儀的檢測,觀察到在硒化銅鋅錫的訊號 27.33度、45.31度、53.63度皆有明顯的峰值,證實基板溫度的差異有效影響硒化銅的產生 。
Three stages evaporation and precursor by selenization process are a well-established method for the growth of Cu(In,Ga)Se2 thin films. In order to optimize the crystal properties of Cu2ZnSnSe4 (CZTSe), an analogous method, as known as binary and ternary compound alternating methods, are employed in this work.
In binary compound alternating method, we will discuss the effects of different stacking order of CZTSe epitaxial by the experiments can know when the stacking order of ZnSe / SnSe / CuSe / Mo-glass, capable of producing biological preferably CZTSe film. In Raman scattering spectra, four clear phonon modes of CZTSe are observed at 171, 192, 231 and 245 cm−1, respectively. In ternary compound alternating method, the ratio of different stacking time and reduction of secondary phases were discussed. In stack time of CZS / CTS≦ 1sample series, the Raman spectra shows that by varying the proportion of stack time can control the component of CZTSe. With CZS stacking time increasing, composition transforms form CTS to CZTSe. Additionally, high quality CZTSe was fabricated successfully because impurity second phase as CuSe from Raman scattering was suppressed by growth temperature variation. According to XRD results, orientation peaks of CZTSe were observed at 2θ=27.33o , 45.31o, and 53.63 o. There were great influences to CZTSe generation by growth temperature variation which was confirmed.
口試合格書 Ⅰ
致謝 Ⅱ
摘要 Ⅲ
Abstract Ⅳ
圖目錄 Ⅷ
表目錄 Ⅸ
第一章 前言 1
第二章 硒化銅鋅錫材料特性 4
2-1. 結晶結構 4
2-2. 二次相 6
2-3. 電性 7
2-4. 拉曼光譜 7
第三章 實驗 9
3-1. 儀器介紹 9
3-1-1 Molecular Beam Epitaxy:MBE 9
3-1-2 X-Ray Diffractometer:XRD 10
3-1-3 Scanning Electron Microscope : SEM 11
3-1-4顯微式拉曼光譜儀 12
3-2. 樣品製備 14
3-2-1 二元化合物交替成長法 14
3-2-2 三元化合物交替成長法 15
第四章 硒化銅鋅錫結構與特性分析 17
4-1. 二元化合物交替成長法 17
4-1-1. 前驅物優化(硒化銅與硒化錫) 17
4-1-2. 堆疊模式的影響 20
4-2. 三元化合物交替成長法 21
4-2-1. CZS/CTS堆疊時間比對於硒化銅鋅錫特性的影響 21
4-2-2. CZTSe二次相(硒化銅)的抑制及改善 23
4-3. 二元與三元化合物交替成長法XRD比較 25
第五章 結論 27
參考文獻 29
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