介電化合物Ba2Ti9O20具有高的相對介電常數(εr：40)，高的品質/頻率因子(Qxf)及接近於零的溫度係數(τt)，是一種穩定且優良的微波元件介電材料，但由於Ba2Ti9O20需達1400oC高溫燒結才能獲得介電性質穩定的材料，為了降低燒結溫度以吻合經濟效益且能保持或提升材料的介電性質因此本研究利用固態反應法來合成鈦酸鋇(Ba2Ti9O20)之前驅物介電粉末，再將合成出來的鈦酸鋇前驅物為主體，添加小量之各類助熔劑，經1350oC以下的溫度高溫燒結成Ba2Ti9O20/MXOY的介電陶瓷，並探討其晶體結構、微結構及介電性質。
藉由熱重分析儀(TGA)及差示熱分析儀(DTA)觀察原料及介電粉末熱性質；利用掃描式電子顯微鏡(SEM)來確認介電陶瓷之微結構；運用X光繞射分析儀(XRD)來觀察介電粉體與陶瓷的晶體結構；利用排液式比重儀量測陶瓷材料的密度；最後使用網路分析儀量測介電陶瓷之介電性質。
研究結果顯示燒結溫度在1250oC時，Ba2Ti9O20/CuO介電陶瓷的XRD繞射峰強度隨CuO的添加量增加而增大，且CuO添加量為3%時，相對介電常數達最大值(εr：72)。隨燒結溫度上升(1250oC~1350oC)，Ba2Ti9O20/CuO的介電常數(permittirty)相對下降，例如含3%CuO的Ba2Ti9O20/CuO，其εr值由72下降至55；密度變化亦有相同趨勢。在1300oC的燒結溫度下，各種助熔劑的添加量增加時，陶瓷的介電常數亦隨之上升，尤其添加3%的Sm2O3、3%CuO及3%MnO2所形成的陶瓷，其介電常數分別為93、65及47；陶瓷密度的變化除添加助熔劑Sm2O3外，其餘的助熔劑(硫酸銅、醋酸銅及硫酸錳)添加量增加，因顆粒界限有熔化的固體溶液產生，密度隨之下降。

Dielectric compound Ba2Ti9O20 has good stability of dielectric properties such as high the relative dielectric constant (εr=40) , high quality factor Q x ƒ value and close to zero temperature conffieient (τt) , therefore Ba2Ti9O20 is one of the best dielectric materials for microwave devices . Yet Ba2Ti9O20 ceramic requires a high sintering temperature(>1400oC) is needed. In order to decrease the sintering temperature (below 1350oC) of Ba2Ti9O20 to full-fill the purpose of cost effective , some reasonable quantity of fusion aid such as CuSO4·5H2O and the others were added during the synthesis process of Ba2Ti9O20/MxOy by the solid-state reaction method. The dielectric properties, crystal structures and microstructures of the final products were also studied in this work.
Using thermal gravimetric analysis (TGA) and differential thermal analysis (DTA) to confirm the thermal properties of the powder of starting materials. The crystal structures of the dielectric powders and ceramics were confirmed by X-ray diffraction(XRD). Scanning electron microscopy (SEM) were used to observe the surface phenomenon and the microstructure of the ceramics. Finally, dielectric properties of ceramics Ba2Ti9O20 /MxOy were measured by the network analyzer.
The results show that the intensity of XRD peaks of Ba2Ti9O20/CuO increased with increasing CuO quantity . When CuO quantity reached 3% by Wt , the relative permittivity become the maximum at εr=72 . As the sintering temperature reached 1250oC~1350oC , the permittivity declined , from εr=72 to εr=55 . A similar trend was observed for sample intensity . At sintering temperature of 1300oC , sample permittity increaed with increasing fusion aid quantity in used . For example , the permittities of the sample with addition of 3% by wt Sm2O3 , 3% by wt CuO , 3% by wt MnO2 are 93 , 65 , and 47 , respectively . On the other hand the densities decrease when increasing the fusion aids such as CuSO4 , Cu(CH3COO)2 , MnSO4 except Sm2O3 . The desity drop was due to the formation of solid solution at the grain boundary of the sample .

誌謝 iv
摘要 v
ABSTRACT vi
目錄 viii
表目錄 x
圖目錄 xi
1. 緒論 1
1.1 前言 1
1.2 研究動機 2
1.3 研究目的 3
2. 文獻回顧 4
2.1 介電材料簡述 4
2.2 介電原 5
2.3 介電材料合成方式 7
3. 研究方法 11
3.1 原料藥品 11
3.2 儀器設備 12
3.3 實驗步驟 13
3.4 介電陶瓷的製備 13
4. 結果與討論 18
4.1 前驅物粉末熱分析 18
4.2 晶格鑑定分析 29
4.3 微結構觀察與分析 54
4.4 陶瓷材料密度量測與分析 65
4.5 陶瓷材料的助熔劑、燒結溫度與介電材料之介電常數相互關係 68
5.結論 71
參考文獻 73

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