臺灣博碩士論文加值系統

本實驗使用溶膠凝膠法搭配旋轉塗佈法製備出氧化鋅添加鎂(MZO)及氧化鎂鋅摻雜鎵(MGZO) 的半導體薄膜於玻璃基板上，並探討雜質原子的加入對MZO及MGZO半導體薄膜光電性質的影響。本實驗結果顯示製備的所有MZO薄膜皆為纖鋅礦結構，在鎂添加後可使氧化鋅薄膜表面粗糙度變小且平整；於可見光波段具有高平均穿透率( >90% )。也發現當氧化鋅薄膜添加鎂的含量增加(0~0.3)，會使薄膜的載子濃度由-4.64×1014 降低到 -2.51×1013 cm-3，並且在光學能隙上薄膜光學能隙值由3.25 eV提高到3.64 eV。
我們使用ZnO-based薄膜在鎂添加量為0.2的參數(Mg0.2Zn0.8O)做鎵摻雜(0-5 at%)半導體薄膜(MGZO)的物理性質研究。摻雜鎵後MZO薄膜微結構明顯細化，比起未摻雜的MZO薄膜其表面緻密平坦有較低的RMS粗糙度，並且提升可見光區的光學穿透率。研究中還發現鎵摻雜後光學能隙比起未摻雜的MZO薄膜(3.56 eV)略微提升致3.60 eV。比起所有MZO薄膜，當MZO薄膜在鎵摻雜3 at%時，具有較高的載子濃度為-2.28×1013 cm-3。

The Mg substituted ZnO (MZO) and Ga doped MZO (MGZO) semiconductor thin films were deposited on glass substrates by sol-gel method and spin coating technique. The author investigated the effects of impurity dopants on the optical and electrical properties of MZO and MGZO semiconductor thin films. Experimental results showed that all the as-prepared MZO films had a wurtzite phase; Mg substitution in ZnO thin films cause to reduce surface roughness and to make it smooth, and then have a average high transmittance (> 90%) in the visible range. It was also found that substitution of Mg into ZnO thin films can reduce the carrier concentration from -4.64×1014 to -2.51×1013 cm-3 and increase the optical band gap from 3.25 to 3.65 eV when Mg content increased from x=0 to x=0.3.
We used the Mg0.2Zn0.8O as the base composition for studying the influence of Ga doping level (0-5 at%) on the physical properties of ZnO-based thin films. MZO thin films doped with Ga refined the microstructure, exhibited lower RMS roughness, and improved optical transmittance in the visible region as compared to undoped MZO thin films. This study also found that the optical band gap of Ga-doped films was 3.60 eV, slightly higher than that of undoped MZO samples (3.56 eV). The 3 at% Ga-doped MZO thin films exhibited the highest carrier concentration of -2.28×1013 cm-3 among all of the MZO thin films.

致謝 I
中文摘要 II
Abstract II
目錄 III
圖目錄 VI
表目錄 VIII
第一章 前言 1
第二章 文獻回顧 3
2.1氧化鋅的基本特性與應用 3
2.1.1氧化鋅的基本特性 3
2.1.2氧化鋅薄膜摻雜異質金屬離子 6
2.2氧化鎂鋅基薄膜 7
2.2.1氧化鎂鋅(MZO)薄膜 7
2.2.2氧化鎂鋅(MZO)薄膜添加其他金屬元素 9
2.3 溶膠凝膠法 10
2.3.1溶膠凝膠法原理 10
2.3.2溶膠凝膠法鍍膜製程 12
2.3.3溶膠凝膠法之優缺點 14
2.3.4影響溶膠凝膠法因素 14
2.4 旋轉塗佈法(Spin coating) 15
第三章 實驗方法與步驟 16
3.1實驗規劃 16
3.2實驗藥品、基材與儀器 18
3.3實驗流程 20
3.3.1氧化鎂鋅基溶膠凝膠合成 20
3.3.2摻雜鎵之氧化鎂鋅基溶膠凝膠合成 20
3.3.3溶液塗佈與熱退火處理 22
3.4溶膠凝膠特性分析 23
3.4.1酸鹼值量測 23
3.4.2熱分析 23
3.5 薄膜特性分析 24
3.5.1薄膜晶體結構分析 24
3.5.2薄膜顯微結構觀察 24
3.5.3薄膜表面形態與粗糙度分析 24
3.5.4薄膜表面成分分析 25
3.5.5薄膜光電性質分析 25
3.5.6薄膜光激螢光量測 25
3.5.7霍爾效應量測 26
第四章 結果與討論 28
4.1氧化鎂鋅(MZO)薄膜之物理特性分析 28
4.1.1氧化鋅(ZnO)溶凝膠熱分析 28
4.1.2 MZO薄膜之晶體結構分析 30
4.1.3 MZO薄膜之顯微結構與表面型態觀察 34
4.1.4 MZO薄膜之光學性質分析 38
4.1.5 MZO薄膜之光激螢光量測 43
4.1.6 MZO薄膜之表面成分分析 46
4.1.7 MZO薄膜之電性量測 51
4.2摻雜鎵之氧化鎂鋅(MGZO)薄膜物理特性分析 53
4.2.1 MGZO薄膜之晶體結構分析 53
4.2.2 MGZO薄膜之顯微結構與表面型態觀察 55
4.2.3 MGZO薄膜之光學性質分析 59
4.2.4 MGZO薄膜之光激螢光量測 63
4.2.5 MGZO薄膜之電性量測 66
結論 67
參考文獻 68

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