臺灣博碩士論文加值系統

本實驗使用RF 磁控濺鍍法製做氧化亞銅薄膜，利用摻雜不同銅含
量(未摻雜、1wt%、3wt%、7wt%)之氧化亞銅靶材進行濺鍍，以氬氣最
為濺鍍氣氛，並通入不同氮氣流量濺鍍於玻璃基板與矽基板，分別進行
顯微結構分析(FE-SEM)、結晶結構分析(XRD)、UV-visible 以及霍爾量測探討氧化亞銅薄膜之性質。
由實驗中得知靶材銅添加量增加，能夠使薄膜電阻率下降。隨著通
入氮氣之流量增加，能夠獲得氧化亞銅薄膜。摻雜1wt%銅之氧化亞銅
靶，通入10sccm 之氮氣，沉積於矽基板能夠獲得最佳之電性，電阻率、
遷移率與載子濃度分別為1.29 x 10-3Ω-cm、1.94 x 103 cm2/Vs 以及1.98 x1017 cm-3。

In this study, we prepared cuprous oxide thin films on the glass substrate and silicon substrates by RF magnetron sputtering method with different copper contents in the copper oxide target (undoped, 1wt%, 3wt%, 7wt%). The effect of nitrogen content on the microstructure and electrical property of cuprous oxide films will also be investigated in this study. The crystal structure was characterized by XRD(PANalytical X''Pert PRO). The surface microstructure is analyzed by FESEM(Hitachi S-4700). The electrical and optical properties are measured by Van-Der Paw method and UV-visible photoelectrometer.
In this study, we found that the addition of Cu in the target can significantly descreased the electrical resistivity of cuprous oxide films. On the other hand, the addition of nitrogen during sputtering can also improve the electrical conductivity of cuprous oxide films as a result of enhancement of cuprous oxide crystallization. The optimum electrical resistivity of cuprous oxide film was obtained of 1.29 x 10-3 Ω-cm with carrier mobility of 1.94 x 103 cm2/Vs and carrier concentration of 1.98 x 1017 cm-3. The optical transmissions of cuprous oxide films are ranged from 51~78% with the optical band gaps of 2.2 ~ 2.6 eV depending on the concentration of Cu and N2 additions.

中文摘要 I
英文摘要 II
誌謝 III
總目錄 IV
表目錄 VI
圖目錄 IX
第一章 緒論 1
1-1前言[1][2][3] 1
1-2研究動機與目的[4][5] 3
第二章 實驗原理 4
2-1電漿原理[6][7][8][9] 4
2-2濺鍍原理[10][11][12] 5
2-3射頻磁控濺鍍原理 7
2-4薄膜成核原理 9
2-5氧化亞銅(Cu2O)結構與特性[13][14] 11
第三章 文獻回顧 12
3-1利用熱氧化法製作氧化亞銅薄膜 12
3-2利用電沉積法製作氧化亞銅薄膜 19
3-3利用濺鍍法製作氧化亞銅薄膜 23
3-4參雜氮於氧化亞銅薄膜 43
第四章 實驗步驟 49
4-1基板清洗 50
4-2靶材製備 51
4-3濺鍍系統與實驗參數 53
4-4薄膜性質分析設備 55
4-4-1繞射分析儀(XRD) 55
4-4-2場發射掃描式電子顯微鏡(FE-SEM) 57
4-4-3紫外光/可見光分光光譜儀( UV-visible ) 59
4-4-4霍爾效應量測儀( Hall effect measurement ) 60
第五章 結果與討論 61
5-1摻雜不同銅含量之氧化亞銅 61
5-1-1沉積於玻璃基板 61
5-1-2沉積於矽基板 68
5-2通入不同氮氣流量進行改質 73
5-2-1未摻雜銅之氧化亞銅 73
5-2-2摻雜1wt%銅之氧化亞銅 85
5-2-3摻雜3wt%銅之氧化亞銅 97
5-2-4摻雜7wt%銅之氧化亞銅 109
5-3通入相同氮氣流量之比較 120
5-3-1通入5sccm之氮氣流量 120
5-3-2通入10sccm之氮氣流量 124
5-3-3通入15sccm之氮氣流量 128
5-3-4通入20sccm之氮氣流量 ...132
第六章 結論 136
參考文獻 137

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