臺灣博碩士論文加值系統

為了實現高效能之透明顯示器亦或可撓式顯示器，使用非晶氧化物半導體(a-IGZO)薄膜電晶體，是一種提升及取代傳統非晶矽薄膜電晶體製程的方法。本論文首先調整薄膜電晶體製程參數製作出遷移率10~15 cm2/V-s之有機絕緣層薄膜電晶體於玻璃基板製程。其後，製作使用有機鈍化層之薄膜電晶體，可有效阻絕環境變因，穩定元件品質。將有機鈍化層之薄膜電晶體製程整合至可撓式基板，遷移率可自0.55 cm2/V-s提升至1.28cm2/V-s。

Recently, studies on transparent oxide thin film transistors have attract a lot interesting because of high mobility and high aspect ratio in display applications. Among all oxide semiconductors, amorphous indium gallium zinc oxide (a-IGZO) TFTs is fast developed. This material shows excellent properties as a TFT for display. The a-IGZO could be growth in the low temperature in amorphous from exhibit over 10 cm2/Vs electron mobility with very uniform distributions. This value is much higher than a-Si:H in current active matrix LCD. In this thesis, we study using an organic passivation layer for a-IGZO Thin Film Transistors. The TFT performance wasexhibit 10~15 cm2/V-s of mobility.Withorganic passivation layer can improve the device stability. a-IGZO TFTs using an organic passivation layer processed on flexible PEN substrate the mobility upgrade from 0.55 to 1.28 cm2/V-s. Furthermore, we pave a way for future high performance and flexible display.

摘要 .........................................2
Abstract.........................................3
誌謝 .........................................4
目錄 .........................................5
表目錄 .........................................6
圖目錄 .........................................7
第一章 緒論 .................................9
1.1 前言 .................................9
1.2 研究動機 .................................9
第二章 文獻探討 ................................10
2.1 文獻簡介 ................................10
第三章 實驗方法與步驟 ........................12
3.1 實驗流程 ................................12
3.2 基板清洗 ................................13
3.3 鍍製電極 ................................14
3.3.1 熱蒸鍍系統 ................................14
3.4 絕緣層與鈍化層溶液調配與製作 ................15
3.4.1 絕緣層溶液製作 ........................16
3.4.2 鈍化層溶液製作 ........................16
3.5 通道層沉積 ................................17
3.5.1 射頻磁控濺鍍系統 ........................17
3.6 測量分析 ................................19
3.6.1 ID-VGS特性曲線 ........................19
3.6.2 ID-VDS特性曲線 ........................21
3.6.3 IG-VGS特性曲線 ........................25
3.6.4電容值參數萃取 ........................25
第四章 實驗結果與討論 ........................26
4.1 實驗參數萃取 ........................26
4.2 有機鈍化層之a-IGZO TFT製程 ................33
4.3 穩定度Stability實驗 ........................40
4.3.1 a-IGZO薄膜電晶體穩定度量測 ................40
4.3.2 a-IGZO薄膜電晶體PVP/PMF鈍化層結構穩定度量測 43
4.3.3 a-IGZO薄膜電晶體PVP鈍化層結構穩定度量測 46
第五章 結論 ................................52
參考文獻 ........................................53

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