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研究生:陳煌威
研究生(外文):Huang-Wei Chen
論文名稱:應用碳硬質光罩於金屬蝕刻中關鍵尺寸與輪廓改善之研究
論文名稱(外文):Improvement in Profile and Critical Dimension by Carbon Hard Mask in Metal Etching
指導教授:裴靜偉
指導教授(外文):Zing-Way Pei
口試委員:張書通林昶宇
口試委員(外文):Shu-Tong ChangChang-Yu Lin
口試日期:2016-04-11
學位類別:碩士
校院名稱:國立中興大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2016
畢業學年度:104
語文別:中文
論文頁數:72
中文關鍵詞:金屬層蝕刻碳材質硬式罩幕關鍵尺寸蝕刻輪廓電性阻抗
外文關鍵詞:Metal etchcarbon hard maskCDetch profileresistance
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科技日新月異,在積體電路進入奈米級尺寸後,由於微影圖案尺寸縮小與光阻厚度變薄,又加上氧化層厚度增加的情況下,使得蝕刻製程會因光阻厚度不夠而導致電漿蝕刻產生問題,微影圖案無法定義,故在整個薄膜的堆疊上加入硬式罩幕以改善蝕刻製程結果。
本研究為在金屬層蝕刻製程中,在光阻罩幕下加入碳材質薄膜當成硬式罩幕對底層氧化層進行蝕刻,再以此氧化層作為金屬層的罩幕蝕刻,在相同的蝕刻條件下,碳材質硬式罩幕氧化層對金屬層蝕刻的蝕刻輪廓寬度較光阻罩幕氧化層對金屬層蝕刻的蝕刻輪廓寬度來的寬,以碳材質硬式罩幕蝕刻的金屬層關鍵尺寸也大於以光阻罩幕蝕刻的金屬層關鍵尺寸約5~10nm,圖案轉移能力較佳。碳材質硬式罩幕蝕刻量測出來的金屬層電性阻抗在0.30~0.32Ω之間,與光阻罩幕蝕刻的金屬層電性阻抗在0.27~0.29Ω之間相比,其相差值平均為0.027Ω,並無太大差異,也沒有阻抗異常的情形;由此可得,以碳材質硬式罩幕蝕刻的金屬層並無電性阻抗值過高而造成斷路的問題。因此加上碳材質硬式罩幕不僅可以得到較佳的蝕刻解析度,且不需要額外的能源消耗。


As technology improving, the integrated circuit has scaled into nano-level. However, insufficient photo resist caused by smaller lithography pattern, thinner photo resist and thicker oxide layer in etching process has made plasma etching tricky, such as vague lithography pattern. Under the setting, the study used hard mask on the stack of films to improve the etching process.
In the process of metal etching, the study used carbon-based mask to etch the under-lying oxide layer, and replaced photo resist mask. And then the oxide layer served as mask to etch the metal layer. Comparing to photo resist mask, oxide layer accessed by carbon-based mask can effectively reduce distortion and obtain more vertical oxide etched profiles. In etched profile and dimensions, the carbon hard mask also improved etching process on metal layer with wider etched profile, wider critical dimensions about 5~10 nm and got better transferred pattern.
The resistance of metal layer derived from carbon-based hard mask was 0.30~0.32Ω without abnormal impedance, and the counterpart of photo resist mask was 0.27~0.29Ω , with a difference of 0.027Ω, very minor, which can be obtained that metal layer derived from carbon-based hard mask won’t lead to open circuit problem that caused by excessive resistance.
Therefore, carbon-based hard mask can improve the etched lithography pattern reso-lution without additional energy consumption.


摘要 i
Abstract ii
目錄 iii
圖目錄 v
表目錄 vii
壹、前言 1
貳、文獻回顧 4
2-1 半導體蝕刻製程簡介 4
2-1-1 蝕刻製程的定義 4
2-1-2 蝕刻製程的方式 5
2-1-3 蝕刻製程結果檢驗與異常分析的方法 13
2-2 金屬層蝕刻 17
2-2-1 金屬層蝕刻 17
2-2-2 氧化層蝕刻 19
2-3 硬式罩幕 22
2-3-1 硬式罩幕於蝕刻的運用 22
2-3-2 碳材質硬式罩幕 24
參、實驗步驟 26
3-1 實驗規劃 26
3-2 實驗步驟 28
3-2-1 實驗試片準備 28
3-2-2 實驗步驟 30
3-3 實驗蝕刻機台與分析儀器介紹 35
3-3-1 氧化層蝕刻機台 35
3-3-2 金屬層蝕刻機台 36
3-3-3 微距-掃瞄式電子顯微鏡 36
3-3-4 掃瞄式電子顯微鏡 37
3-3-5 晶圓電性阻抗測試機台 37
肆、結果與討論 38
4-1 金屬層蝕刻結果 38
4-1-1 金屬層關鍵尺寸 38
4-1-2 金屬層蝕刻輪廓 45
4-1-3 金屬層電性阻抗量測 62
伍、結論 68
陸、參考文獻 69

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