臺灣博碩士論文加值系統

本研究先以氣相傳輸法合成SnO2奈米線，接著用濕式化學法於SnO2奈米線表面附著直徑約10 nm的NiO奈米顆粒，形成的異質接面結構在NiO/SnO2接面處會形成P-N Junction 並產生更大能障，因而造成電阻增加，氣體感測發生反應時，氧化性氣體會捕捉電子，並在表面形成空間電荷層(或稱電子消耗層)，使得電子傳輸通道縮小，使得電阻再度提升，靈敏度也隨之提升。配合一維奈米結構有大的比表面積以及NiO本身的吸濕性，使SnO2在進行氣體感測時，能降低環境濕度的影響，更有助於增加在室溫的感測能力。本研究於鎳前驅鹽比例0.5 wt%，溫度250oC以及待測氣體NO2濃度15 ppm時靈敏度可達到9.34，並於室溫時靈敏度仍能達8.41，相較於純SnO2奈米線於250oC對15 ppm NO2進行感測，其靈敏度可提升5.66倍，經改質後的異質結構，不只能在室溫進行感測而且比較純SnO2奈米線於250oC時，靈敏度有明顯的提升。所合成的NiO/SnO2異質接面結構分別會以電子顯微鏡、能量散射光譜儀、低掠角X光繞射儀、X射線光電子能譜儀做結構分析。

In this work, we synthesize NiO/SnO2 heterojuction nanowire by a two stage process. First, we use thermal vapor transport to form SnO2 nanowires. Then, we prepare Ni precursor and let NiO particles attach to the SnO2 nanowires by wet chemical method. Interface of NiO/SnO2 heterostructure forms p-n junctions so that local depletion layer existed near the surface and impeded electron transportation upon reacted with the NO2 gas, leading to an increased electrical resistivity accordingly. Absorption of moisture by NiO protects the SnO2 when measuring gas sensing at room temperature. In this work, 0.5wt% NiO/SnO2 heterostructure sensitivity can reach 9.34 at 250oC against 15 ppm of NO2, 8.41 at room temperature against 15 ppm of NO2. The sensitivity is 5.66 times when compared to that of the SnO2 nanowires.

第一章 緒論 1
1.1前言 1
第二章 文獻回顧 2
2.1氣體感測器的介紹 2
2.2金屬氧化物半導體的氣體感測機制 3
2.3金屬氧化物半導體氣體感測器的選擇以及影響因素 6
2.4二氧化氮的特性與危害 8
2.5二氧化錫的材料選擇 8
2.6氧化鎳的材料選擇 11
2.7研究動機與目的 14
第三章 實驗方法與步驟 15
3.1實驗藥品與製程設備 15
3.2實驗流程簡介 16
3.3 SnO2奈米線之製備 17
3.4 NiO/SnO2奈米異質接面結構的合成 18
3.5材料特性分析 20
3.6氣體感測元件的製作與氣體感測特性的量測 21
3.7室溫環境的氣體感測特性量測 23
第四章 實驗結果 24
4.1 SnO2奈米線之合成 24
4.2 NiO/SnO2異質接面奈米線之合成與結構分析 25
4.3 氣體感測 32
第五章 討論 43
5.1 SnO2奈米線之氣體感測 43
5.2 NiO/SnO2異質接面結構之氣體感測 44
第六章 結論48
參考文獻 49

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