臺灣博碩士論文加值系統

發展太陽能電池效率是許多人努力的目標。而太陽能電池矽基板本身的反射率很高,高達30%~40% 無法被吸收而浪費了。本篇論文著重如何在基板上製作正面抗反射層與背面反射層以降低反射率進而提高光電流。
本篇論文研究利用電漿輔助化學氣相沉積(Plasma Enhanced Chemical Vapor Deposition PECVD)製作氮化矽(SiNx:H)抗反射層，調整製程中矽甲烷(silane SiH4)與氨氣(ammonia NH3)氣體流量比例，以改變氮化矽(SiNx:H)組成結構，在矽基板上製作不同折射率抗反射層鍍膜。
並應用在工研院(ITRI)設計的雙面太陽能電池(BSC)。並分別製作單層、雙層與多層氮化矽(SiNx)抗反射層，找出正背面合適的氮化矽(SiNx)層參數，以提升光電流進而提升轉換效率。其最佳結果對比於當前標準製程總效率可提升0.6%。

關鍵字：雙面太陽能電池(BSC)、鈍化射極與背電極太陽能電池(PERC)、太陽能電池(Solar Cells)、電漿輔助化學氣相沉積(PECVD)、抗反射層(AR)、氮化矽(SiNx)。

Improve the efficiency of solar cell is very important to fuuly utilize solar energy. As high as 30% to 40% of solar energy were wasted by reflection of the silicon substrate itself. This paper aim at on making a front Antireflection coating and rear reflection coating on the substrate, thereby,reduce the reflectivity and improving photocurrent.
This paper studies, we have adjusted silane (SiH4) and ammonia (NH3) gas flow ratio, to Change the silicon nitride (SiNx:H) composition , and coated on front side (Antireflection coating) and backside of cell using plasma enhanced chemical vapor deposition (PECVD). Apply them to the bifacial solar cell (BSC) of Industrial Technology Research Institute (ITRI) design of the bifacial solar cell (BSC).
The best parameters of silicon nitride (SiNx:H) layer were tried on both front and backside of silicon substrates with different roughness. The best results has shown an improvement of 0.6% in effiency in compare with that of control group.

Keywords : Bifacial solar cells (BSC); Passivated Emitter Rear Cell (PERC); Solar Cells; Plasma enhanced chemical vapor deposition (PECVD); Antireflection coating (AR); Silicon nitride (SiNx:H)

目錄
誌謝 i
摘要 ii
Abstract iii
目錄 iv
表目錄 viii
圖目錄 ix
第一章 緒論 1
1.1研究動機 1
1.2研究架構與目的 1
第二章 文獻回顧 3
2.1太陽能電池概論 3
2.1.1太陽能電池的起源 3
2.1.2太陽能電池種類與發展 4
2.2太陽輻射與光譜 6
2.2.1太陽光輻射與吸收 6
2.2.2太陽能電池的光譜響應 7
2.3太陽能電池工作原理 9
2.3.1半導體的PN接面 9
2.3.2太陽能電池發電原理 10
2.4太陽能電池模型與參數 11
2.4.1太陽能電池模型 11
2.4.2太陽能電池光/暗電流特性曲線 12
2.4.3太陽能電池基本參數 14
2.5電池表面結構與光學 16
2.5.1折射與反射 16
2.5.2表面粗糙化 17
2.5.3抗反射層 18
第三章 實驗介紹 21
3.1製程機台介紹 21
3.1.1酸鹼蝕刻槽 21
3.1.2晶片旋乾機 22
3.1.3矽晶太陽能電池擴散與成膜爐管 23
3.1.4管狀高溫爐管 24
3.1.5批量原子層沉積設備 25
3.1.6對位網印機 26
3.1.7矽晶電池表面電極紅外線燒結爐 27
3.2實驗流程介紹 28
3.2.1晶片清洗(Wafer Clean) 28
3.2.2表面粗糙化(Texture) 29
3.2.3磷擴散(Phosphorus Diffusion/POCl3 Diffusion) 30
3.2.3磷玻璃去除(PSG Removal) 31
3.2.4鈍化退火(Emitter Passivation) 31
3.2.5正面抗反射層鍍膜(Front AR Coating) 32
3.2.6背面拋光(Rear Polish) 32
3.2.7成長背面氧化層(Rear Oxidation) 33
3.2.8批量原子層沉積(Atomic Layer Deposition ALD) 33
3.2.9高溫退火(Annealing) 34
3.2.10背面抗反射層鍍膜(Rear AR Coating) 35
3.2.11雷射開線(Laser Opening) 35
3.2.13網版印刷(Screen Printing) 35
3.2.14燒結(IR Sintering) 38
3.3量測儀器介紹 41
3.3.1橢圓偏光儀 41
3.3.2霧度光譜儀 41
3.3.3太陽能電池光源模擬器系統 (I-V量測) 42
3.3.4光譜響應量測系統 43
第四章 結果與討論 45
4.1表面結構與反射率 45
4.2雙層抗反射膜MgF2/SiNx 45
4.3 PECVD參數調整 47
4.4 PV lighthouse模擬[39] 49
4.4.1正面單層抗反射層模擬 49
4.4.2正面雙層抗反射層模擬 50
4.4.3雙面電池模擬抗反射層模擬 52
4.5正面單層抗反射層電池 53
4.5.1正面單層抗反射層反射率 54
4.5.2正面單層抗反射層電池結果 54
4.6正面雙層抗反射層電池 57
4.6.1現有Recipe正面雙層抗反射層電池 57
4.6.2正面雙層抗反射層反射率 58
4.6.3正面雙層抗反射層電池結果 59
4.7漸變式抗反射層電池 63
4.6.1漸變式抗反射層反射率 63
4.7.2漸變式抗反射層電池結果 65
4.8雙面太陽能電池(BSC)背面抗反射層 66
4.8.1背面單層抗反射層反射率 66
4.8.2雙面電池背面單層抗反射層電池結果 68
4.9雙面電池正背面整合後與目前標準製程比較 72
第五章 結論 74
參考文獻 75

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