(3.238.130.97) 您好!臺灣時間:2021/05/14 19:37
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果

詳目顯示:::

我願授權國圖
: 
twitterline
研究生:陳凱隆
研究生(外文):Kai-Long Chen
論文名稱:CMOS-MEMS微槳型懸臂樑感測器之設計探討
論文名稱(外文):A Study on Design of CMOS MEMS Paddle Cantilever Beam
指導教授:林明澤林明澤引用關係
指導教授(外文):Ming-Tzer Lin
口試委員:徐炯勛吳嘉哲
口試委員(外文):Jyong-Syun HsuChia-Che Wu
口試日期:2016-07-20
學位類別:碩士
校院名稱:國立中興大學
系所名稱:精密工程學系所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2016
畢業學年度:104
語文別:中文
論文頁數:54
中文關鍵詞:微槳型懸臂樑CMOS-MEMS全域型真空計
外文關鍵詞:Paddle cantilever beamCMOS-MEMSGlobal vacuum gauge
相關次數:
  • 被引用被引用:0
  • 點閱點閱:98
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
本研究探討如何透過CMOS-MEMS製程整合技術,設計微槳型懸臂樑真空計,由於微製造與一般的IC製程相容性較高,因此可以將微機電系統設計於同一晶片上。研究設計的晶片係將微槳型等懸臂樑真空計之MEMS感測元件、驅動系統與量測系統整合在單一晶片上,並透過後製程將微槳型懸臂樑結構釋放,驅動懸臂樑結構使其在不同真空度下進行振盪,並量測自由振盪衰減率,針對衰減率進行研究及分析,找出真空度與衰減率兩者間之關係。利用SPICE 設計並模擬 CMOS電路,並使用 Solidworks 繪製 MEMS 結構,套用在 Ansys 進行有線元素分析,最後套用 180 奈米技術資料於 Laker 將其平面佈局圖繪製出來,而後於國家晶片中心(CIC)進行下線動作此設計若成功,將可大幅降低尺寸與製作成本,使感測元件能更有效地應用於真空系統中。

In this thesis, we design a CMOS-MEMS paddle cantilever beam type pressure vacuum through CMOS-MEMS processing integration technology, which greatly reduces the size of vacuum gauge and its cost. Since the micro-fabrication process is highly compatible to general IC process, both VLSI and micro-structure can coexist the same chip. In our experiment, the paddle cantilever beam type pressure vacuum of the MEMS sensing element, the drive system and the measurement system are integrated on a single chip, which present a Paddle cantilever beam by using post-process. By measuring the resonant frequency and decay rate, we also can find the correlation between the degree of vacuum and decay rate. In this thesis, there are 5 steps to design a CMOS-MEMS paddle cantilever beam type pressure vacuum, we use SPICE to design and simulate the VLSI, we use Solidworks to generate the MEMS structure, we apply Ansys to analyze. we use Laker to map the layout in accordance with the 180 nm Foundry Design Kit, and the chip is finally taped out by CIC. To sum up, the CMOS-MEMS paddle cantilever beam type pressure vacuum greatly reduces the size of vacuum gauge and its cost, making sensing element applied in vacuum system more effective.

目錄
摘要 i
Abstract ii
目錄 iii
圖目錄 v
表目錄 viii
符號說明 ix
第一章 緒論 1
1-1前言 1
1-2研究動機與目的 4
1-3本文架構 5
第二章 文獻回顧 6
2-1 真空計 6
2-2 微槳型懸臂樑之結構設計原理 10
2-2-1 懸臂樑等效剛性的計算 10
2-2-2 懸臂樑之自由振動分析 11
2-2-3 等應力微槳型懸臂樑之設計概念 12
第三章 微槳型懸臂樑真空感測器之設計與分析 13
3-1 微槳型懸臂樑真空感測器之系統架構 15
3-2 微槳型懸臂樑結構設計與模擬分析 16
3-3 微槳型懸臂樑真空感測器之電路設計與模擬 19
3-4 微槳型懸臂樑真空感測器之晶片下線佈局 22
第四章 後製程流程與實驗結果 23
4-1 晶片成分分析 24
4-1-1 能量色散X-射線光譜(EDS)原理說明 25
4-1-2 成分分析結果與說明 25
4-2 後製程之濕蝕刻流程 29
4-2-1 金屬鋁蝕刻液配置與蝕刻方法 31
4-2-2 以濕蝕刻方式對金屬鋁薄膜蝕刻 33
4-3-1 FIB基本介紹 38
4-3-2 FIB製作微結構 39
第五章 結論 42
5-1 對於晶片之設計探討 43
5-1-1 電路過於複雜 44
5-1-2 量測方式 45
5-1-3 後製程探討 47
5-2 晶片之晶片與量測系統 49
5-3 結論與討論 51
5-4 建議及未來工作 51
參考文獻 52



參考文獻
[1.]Electromechanical monolithic resonator,US patent 3614677, Filed April 29, 1966; Issued October 1971
[2.]Wilfinger, R.J.; Bardell, P.H.; Chhabra, D.S., The resonistor a frequency selective device utilizing the mechanical resonance of a substrate (PDF). IBM J. 1968, 12: 113–8.
[3.]Nathanson, H.C.; Newell, W.E.; Wickstrom, R.A.; Davis, J.R., Jr.,TheResonant Gate Transistor IEEE Transelectron Devices Vol.14, No.3 Pg 117-133, 1967
[4.]Boser, B.E.; Howe, R.T. ”Surface micromachined accelerometers” Solid-State Circuits, IEEE Journal of , Volume: 31 Issue: 3 , March 1996 Page(s): 366 -375
[5.]Ahmad, H.; Al-Khalili, A.-J.; Landsberger, L.; Kahrizi, M. “A 2D micromachined accelerometer” Electronics, Circuits, and Systems, 1996. ICECS ''96., Proceedings of the Third IEEE International Conference on , Volume: 2 , 1996 Page(s): 908 -911 vol.2
[6.]Park, I.Y.; Lee, C.W.; Jang, H.S.; Oh, Y.S.; Ha, B.J. “Capacitive sensing type surface micromachined silicon accelerometer with a stiffness tuning capability” Micro Electro Mechanical Systems, 1998. MEMS 98. Proceedings., The Eleventh Annual International Workshop on , 1998 Page(s): 637 -642
[7.]教育部產業合作資訊網, 98年06月25日 發行 第 090601期
[8.]CIC 使用手冊 – 0.18 μm CMOS 微機電製程, CIC-CIS-2007-MA09_P_v2.0
[9.]CIC 使用手冊 – 0.35μm CMOS 微機電製程, CIC-CIS-2006-MA10_P_v2.0
[10.]Tong, C.J. and Lin, M.T., Microsystem technologies, 15(8), 1207 (2009)
[11.]孫企達、陳建中編著:《真空測量與儀錶》,機械工業出版社,北京,1981
[12.]托里切利實驗:http://www.ctjh.tpc.edu.tw/www/center/phy_chem/lab/t1.htm
[13.]A.Selvakumar, N. Yazdi, and K. Najafi, “A wide-range micromachined threshold accelerometer array and interface circuit,” Journal of Micromechanics And Microengineerng, Vol.11, pp.118-125, 2001.
[14.]Wang, Q. M. Yang, Z. Li, F. and Smolinski, P., “Analysis of thin film piezoelectric microaccelerometer using analytica and finite element modeling,” Sensors and Actuators A, Vol.113, pp.1–11, 2004.
[15.]Huang, C. H. and Yu, H.C., “The Development Opportunities of CMOS 微機電 in Taiwan,” June 2010
[16.]Steigerwald, J. M., Murarka, S. P. and Gatmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials, John Wiley & Son, New York (1997).
[17.]High Resolution Focused Ion Beam: FIB and Its Applications/Jon Orloff, Lynwood W. Swanson, M. Utlaut., KA/PP
[18.]Beams, J.W.; Young, J.L. and Moore, J.W., Journal of Applied Physics, 17,
[19.]886 (1946)
[20.]株式会社  ,Available from www.ampere.co.jp
[21.]徐業良編著:《元智大學機械系大三機械設計課程教材》,Available from http://designer.mech.yzu.edu.tw/article/articles/course/(2004-05-03)%20%B2%C4%A4Q%A4@%B3%B9%A1@%BE%F7%B1%F1%AE%B6%B0%CA.htm
[22.]Available from https://zh.wikipedia.org/wiki/%E9%98%BB%E5%B0%BC
[23.]彈性敏感元件的結構,Available, from http://www.hqzk99.com/news/1741/10893.html
[24.]Lee, Y.-C., Cheng, Y. T. and Hsu, W., "Electroplating Process of NiCNTs Nanocomposite for MEMS Resonator Fabrication", IEEE MEMS 2011, Cancun, Mexico, 2011
[25.]李世鴻編著:《積體電路製程技術》,五南圖書公司
[26.]VLSI製造技術, 莊達人編著, 高立圖書有限公司出版
[27.]Marshall, J. C., D. L. Herman, P. T. Vernier, D. L. DeVoe, and M. Gaitan, “Young''s modulus measurements in standard IC CMOS processes using MEMS test structures,” IEEE Electron Device Letters, 28, pp960-963, 2007.
[28.]何建龍,許怡儒。「加速度微感測器」。P2-P4;P10-P12。2002
[29.]teigerwald, J. M., Murarka, S. P. and Gatmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials, John Wiley & Son, New York (1997).
[30.]Takahashi, H.; Fujimoto, K.; Nagayama, M. “EFFECT OF pH ON THE DISTRIBUTION OF ANIONS IN ANODIC OXIDE FILMS FORMED ON ALUMINUM IN PHOSPHATE SOLUTIONS.” Journal of the Electrochemical Society, v 135, n 6, Jun, 1988, p 1349-1353
[31.]Z.Szklarska-Smialowska, “Pitting Corrosion of Aluminum” J. Corrosion Science., 41, (1999) 1743-1767
[32.]T. Tsujimura, H. Kitahara, A. Makita, P. M. Fryer, and J. Batey, "Low Resistance Gate Line for High-Resolution TFT/LCD Display," Proceedings of the 1994 International Display Research Conference and International Workshop on Active Matrix LCDs and Display Materials, 1994, p. 424.
[33.]柯賢文,“腐蝕及其防治”,全華科技圖書股份有限公司 (1995)
[34.]Hariharaputhiran, M., Zhang, J., Ramarajan, S., Keleher, J. J., Li, Y. and Babu, S. V, J. Electrochem. Soc., 147, (2000) 3820-3826.


QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
無相關論文
 
無相關期刊
 
無相關點閱論文