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研究生:廖思帆
研究生(外文):Ssu-Fan,Liao
論文名稱:石墨材料時變劣化微結構分析
指導教授:李天錫李天錫引用關係
學位類別:碩士
校院名稱:國立中央大學
系所名稱:機械工程學系在職專班
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2015
畢業學年度:104
語文別:中文
論文頁數:75
中文關鍵詞:太陽能電池石墨侵蝕
外文關鍵詞:solar cellgraphiteetch
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太陽能電池製程中使用了石墨材料當作載體,在經歷過長時間的使用後,石墨材料表面會因製程溶液的清洗而產生損傷;本研究主要針對石墨材料的表面劣化進行分析,以達成減緩石墨材料損耗為主要目的。
本研究使用氫氟酸、鹽酸與氫氧化鉀等化學溶液,固定溶液濃度與容量,以測微器及光學顯微鏡量測石墨厚度變化及表面孔隙變化,由實驗數據進行石墨的表面孔洞侵蝕率分析。
實驗結果觀察,在5%濃度與500c.c.的溶液設定條件下,使用鹽酸清洗石墨表面氮化矽層相對於氫氟酸與氫氧化鉀,就孔洞侵蝕速率而言,侵蝕速率最慢,孔洞侵蝕率約在1:1.6左右,與業界普遍使用的氫氟酸孔洞侵蝕率1:3.3相比,石墨孔洞侵蝕率縮小了50%,可間接提升石墨載體生命週期,達成減緩石墨材料損耗的目的。

Graphite material is used in solar cell process, when during a long time to use, the material surface will be etched by chemical solution. In this study, we will find how to induce graphite material damage by the surface deterioration analysis.
In this study, HF、HCl and KOH was used as experiment chemicals .Under same concentration and volume in this experiment , graphite’s thickness and aperture size observed by micrometer and optical microscope. The graphite surface hole etch can analyzed by experimental data.
The result of experiments reveals the etching rate of HCl solution was less than that of HF and KOH while experiments condition at concentration 5% and volume 500c.c..The etching rate of HCl solution is ≈1:1.6 less than that of HF etching rate ≈1:3.3,HCl aperture may increase graphite lifetime.

中文摘要............................Ⅰ
Abstract.......................... Ⅱ
謝誌..................... ........ Ⅲ
目錄............................... Ⅳ
圖目錄..............................Ⅶ
表目錄..............................Ⅸ
第一章 緒論........................ 1
1-1研究動機與目的.................. 1
1-2文獻回顧....................... 3
1-2-1石墨材料應用於製作載體以沉積氮化矽層之相關研究........3
1-2-2氫氟酸應用於表面潔淨之相關研究.....................4
1-2-3鹽酸應用於半導體材料表面潔淨之相關研究....................4
1-2-4氫氧化鉀應用於半導體材料表面潔淨之相關研究............4
1-3研究方法............................................. 5
第二章太陽能電池製程....................................... 6
2-1單、多晶矽太陽能電池製程............................... 6
2-1-1單、多晶矽太陽能電池產業結構說明.................. 14
2-2太陽能電池發電原理.................................... 15
2-2-1太陽能電池能隙帶光波長吸收區段關係..................17
2-3電漿增益化學氣相沉積爐(PECVD)工作原理................... 18
2-3-1電漿原理(Theory of plasma) ................... 18
2-3-2電導率(electric conductivity) ................ 18
2-3-3電導率與溫度的關係...............................19
2-3-4斯涅爾定律(折射定律) ........................... 19
2-3-5空氣與氮化矽層折射關係............................20
2-3-6電漿增益化學氣相沉積爐(PECVD)製程方法..............21
2-4氮化矽侵蝕原理....................................... 22
2-5太陽能電池製程石墨材料應用............................. 23
2-5-1氮化矽層厚度與石墨乘載盤生命週期之關係...................24
2-6光學顯微鏡(Optical Measurement) .................... 26
2-6-1顯微鏡分類.....................................26
2-6-2顯微鏡成像原理..................................26
第三章實驗設備、材料與方法................................. 27
3-1實驗相關設備......................................... 27
3-1-1精密天平.......................................27
3-1-2 PFA量杯..................................... 27
3-1-3 PFA廣口瓶.................................... 28
3-1-4 PFA鑷子...................................... 28
3-1-5電漿增益化學氣相沉積爐(PECVD) ....................28
3-1-6光學顯微鏡(Optical Measurement) ............... 29
3-1-7測微器.........................................30
3-2實驗材料............................................ 31
3-2-1石墨試片.......................................31
3-2-2 實驗製程溶液.................................. 31
3-3實驗方法............................................. 34
3-4實驗流程與量測........................................ 35
3-4-1石墨試片製作....................................36
3-4-2製程溶液調配....................................36
3-4-3測微器厚度量測..................................36
3-4-4 OM孔洞量測................................... 37
3-4-5實驗參數設定....................................37
第四章結果與討論.......................................... 38
4-1 相同濃度之HF、HCl、KOH對石墨板厚度之劣化關係觀察..... 38
4-2 5%濃度之HF對石墨試片孔洞之劣化關係觀察............. 41
4-3 5%濃度之HCl對石墨試片孔洞之劣化關係觀察.............43
4-4 5%濃度之KOH對石墨試片孔洞之劣化關係觀察............ 45
4-5 相同濃度之HF、HCl、KOH對石墨試片孔洞之劣化關係比較... 47
4-6 劣化前、後表面微結構比較.......................... 49
第五章 結論與未來展望...................................... 51
5-1結論................................................ 51
5-2未來展望............................................ 52
附錄一.................................................. 53
附錄二.................................................. 57
附錄三.................................................. 58
參考文獻................................................ 60

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