跳到主要內容

臺灣博碩士論文加值系統

(44.210.149.205) 您好!臺灣時間:2024/04/17 08:10
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

: 
twitterline
研究生:林秉豐
研究生(外文):Lin,Bing-Feng
論文名稱:多鐵性BiFeO3薄膜成長於不同基板相關特性之研究
論文名稱(外文):Study the multiferroic BFO thin film properties of the growth on different substrates
指導教授:林得裕陳宏仁陳宏仁引用關係
指導教授(外文):Lin,Der-YuhChen,Hone-Zern
口試委員:林得裕陳宏仁柯宗憲
口試委員(外文):Lin,Der-YuhChen,Hone-ZernKo,Tsung-Shine
口試日期:2016-07-28
學位類別:碩士
校院名稱:國立彰化師範大學
系所名稱:電子工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2016
畢業學年度:104
語文別:中文
論文頁數:80
中文關鍵詞:溶膠凝膠可撓式不鏽鋼多鐵性薄膜多鐵性鐵電介電漏電流
外文關鍵詞:Sol-gelFlexible stainless steelThin filmsMultiferroicFerroelectricDielectricLeakage current
相關次數:
  • 被引用被引用:3
  • 點閱點閱:141
  • 評分評分:
  • 下載下載:9
  • 收藏至我的研究室書目清單書目收藏:0
本研究以溶膠凝膠法製備BiFeO3 (BFO)多鐵性薄膜,透過旋轉塗佈法將薄膜沉積在可撓式不鏽鋼 ( Flexible Stainless Steel, FSS)、氟摻雜的氧化錫(F-doped Tin Oxide, FTO)、銦錫氧化物(Indium Tin Oxide, ITO)以及Pt/Ti/SiO2/Si白金(Pt)基板上,並利用RTA快速升溫爐在常壓無通氧下,進行退火處理。本研究中,首先將純相BFO分別於不同基板上成長並形成BFO/FSS、BFO/FTO、BFO/ITO以及BFO/Pt之結構。且在相異溫度下進行高溫熱處理比較其特性。遂依序個別進行純相BFO在不同基板上成長薄膜之X-ray、SEM、鐵電、介電及漏電流量測。
從實驗結果得知:純相BFO/FSS最佳退火溫度為500oC,BFO/FTO和BFO/Pt以450oC為最佳,而BFO/ITO則是550oC。依據BFO薄膜於不同基板上成長,在最佳退火溫度下,進行X-ray、微結構、鐵電、介電及漏電流特性探討,經量測後得到BFO/FSS、BFO/FTO、BFO/ITO以及BFO/Pt之鐵電特性2Pr分別為140 、132、100、100 μC/cm2和2Ec分別為26.66、36、28、22 kV/cm,其中以BFO/FSS之鐵電特性相對最佳,其2Pr值與2Ec值已足以應用在實際鐵電記憶體上。在外加電場在50 kV/cm時BFO/FSS、BFO/FTO、BFO/ITO以及BFO/Pt漏電流密度分別為 4.61x10-4、6.53x10-4、2.31x10-3、2.03x10-3 A/cm2,得知BFO/FSS擁有相對最低的漏電流密度。當外加頻率在500kHz時,純相BFO/FTO擁有相較最高介電常數52.57以及相較最低介電損失0.041。
由本研究可得知,純相BFO薄膜成長於可撓式不鏽鋼基板具有相對較佳的鐵電以及漏電流特性,而成長在FTO玻璃上則具有最佳介電特性。

BiFeO3 (BFO) thin films were fabricated on flexible stainless steel (FSS), fluorine doped tin oxide (F-doped tin oxide FTO), indium tin oxide indium tin oxide (ITO) and Pt/Ti/SiO2/Si platinum (PT) different substrates by spin coating with a sol–gel technology and rapid thermal annealing. In this study, BFO thin films deposited on different substrates will be denoted samples BFO/FSS, BFO/FTO, BFO/ITO, and BFO/Pt, respectively. The effects of various samples on the microstructure, dielectric, ferroelectric, leakage current and magnetic properties of thin films were investigated.
From this studied, the best annealed temperatures of BFO/FSS, BFO/FTO, BFO/Pt, BFO/ITO were 500 C, 450 C, 450 C and 550 C, respectively. The X-ray diffraction analysis showed that the BFO thin films had an orthorhombic structure.
The 2Pr of BFO/FSS, BFO/FTO, BFO/ITO and BFO/Pt were 140, 132, 100 and 100 μC/cm2, respectively, and 2Ec of BFO/FSS, BFO/FTO, BFO/ITO and BFO/Pt were 26.66, 36, 28 and 22 kV/cm, respectively. The BFO/FSS exhibited the better ferroelectric properties, and its 2Pr and 2Ec were already enough to apply in actual ferroelectric memory. The leakage current densities of BFO/FSS, BFO/FTO, BFO/ITO and BFO/Pt were 4.61x10-4, 6.53x10-4, 2.31x10-3 and 2.03x10-3 A/cm2, respectively. The BFO/FSS had the lower leakage current density than other samples. The BFO/FTO had the higher dielectric of 52.27 and the lower dielectric loss of 0.041 at applied frequency of 510 kHz.
From the experimental results, the BFO/FSS had the better ferroelectric and leakage current properties and BFO/FTO had the better dielectric and dielectric loss properties.

目 錄

中文摘要 i
Abstract ii
致謝 iii
目 錄 iv
圖 目 錄 vii
表 目 錄 x
第一章緒論 1
1-1前言 1
1-2研究動機 2
第二章 文獻回顧 3
2-1鐵電材料簡介 3
2-2 鐵電材料特性與相關機制 4
2-2-1鐵電材料晶體結構與特性 4
2-2-2極化機制 9
2-2-3 漏電流機制 13
2-2-4介電常數與介電損失 15
2-2-5介電崩潰機制: 17
2-3 鐵酸鉍簡介(BiFeO3) 18
2-3-1鐵酸鉍晶體結構 18
2-3-2 BiFeO3鐵電性與優點 19
2-4 銦錫氧化物(Indium Tin Oxide) 21
2-5氟摻雜的氧化錫(F-doped Tin Oxide, FTO) 23
2-6薄膜製成方法 23
2-6-1溶膠-凝膠法(Sol-gel) 23
2-6-2起始溶液調配 24
2-6-3薄膜製作 25
2-6-4低溫焦化處理 26
2-6-5高溫熱處理 26
第三章 實驗方法與步驟 27
3-1基板準備 27
3-2溶液製備 28
3-2-1 BiFeO3溶液調配使用藥品名稱 28
3-2-2 BiFeO3溶液配置 30
3-3基板的清洗 31
3-3薄膜製程 33
3-3-1 BiFeO3薄膜製程 33
3-3-2 RTA升溫 35
3-3-3 鐵電薄膜的電容結構製作 35
3-4鐵電及多鐵性薄膜微結構分析 37
3-4-1 X光繞射儀(XRD) 37
3-4-2場發射掃描式電子顯微鏡(Field-emission Scanning Electron Microscope,FE-SEM) 38
3-5 BFO電容元件之電性量 39
3-5-1介電特性量測 39
3-5-2漏電流特性量測 40
3-5-3電滯曲線P-E特性 41
第四章 結果與討論 43
4-1前言 43
4-2 BFO薄膜特性分析 43
4-2-1 XRD繞射分析 43
4-2-2 微觀結構之SEM分析 47
4-2-3 薄膜鐵電特性分析 52
4-2-4 介電常數-頻率特性分析 57
4-2-5介電損失-頻率特性分析 63
4-2-6漏電流特性分析 68
第五章結論 73
參考文獻 75



參考文獻
[1] G. Burns, “Solid state physics,” New York, Academic Press, (1985).
[2] 正傑、詹世雄,鐵電記憶體簡介,奈米通訊,第五卷第四期 (1998).
[3] J. F. Socott and C.A.Araujo, “Ferroelectric memory,” Science vol. 246, pp. 1400-1405, 1989
[4] A. I. Kingon, J. P. Maria, and S. K. Streiffer, “Alternative dielectrics to silicon dioxide for memory and logic devices,” Nature, vol. 406, pp. 1032-1038, 2000.
[5] 齊孝定,多鐵性(multiferroic)材料的發展及潛在應用,物理雙月刊(卅一卷五期) (2009).
[6] A. Nicola Spaldin and Manfred Fiebig, “The renaissance of Magnetoelectric Multiferroics,” Science vol. 309, pp. 391-395, 2005.
[7] T. Mihara, H. Yoshimori, H. Watanabe, and C. A. Pazde Araujo, “Characteristics of bismuth-layered SrBi2Ta2O9 thin film capacitor and comparison with Pb(Zr,Ti)O3,” Jpn. J. Appl. Phys, vol. 34, pp. 5233, 1995.
[8] Y. Hosono, K. Harada, and Y. Yamashita, “Crystal growth and electrical properties of lead-free piezoelectric material (Na1/2Bi1/2)TiO3-BaTiO3,” Journal of Applied Physics vol. 40, pp. 5722-5726, 2001.
[9] C. Michel, J. M. Moreau, G. D. Achenbach, R. Gerson, and W. J. James, “The atomic structure of BiFeO3,” Solid-state Communication, vol. 7, pp. 701-704, 1969.
[10] F. Kubel and H. Schmid, “Growth twinning and etch figures of ferroelectric/ferroelastic dendritic BiFeO3 single domain crystals,” J. Cryst. Growth, vol. 129, pp. 515–524, 1993.
[11] F. Yan, T.J. Zhu, M.O. Lai, and L. Lu, “Enhanced multiferroic properties and domain structure of La-doped BiFeO3 thin films,” Science, vol. 63, pp. 780-783, 2010.
[12] 陳彥淳,“Bi1-xPrxFe0.95Mn0.05O3多鐵性薄膜鐵電及磁電特性研究”,修平科技大大學碩士論文 (2012).
[13] 孫郁明,“添加鑭系元素(La、Sm)之鈦酸鉍鐵電薄膜應用於非揮發性記憶體之研究”,清華大學碩士論文 (2003).
[14] Y. Xu, “Ferroelectric materials and their applications,” Elsevier, NorthHolland, 1991.
[15] 唐立權、黃中垚、張振雄、李明憲,第一原理計算鈣鈦礦結構三元鹵化物之二階非線性光學係數,物理雙月刊二十七卷四期(2005).
[16] 劉鈞元,“利用射頻磁控濺鍍系統製備BiFeO3薄膜及其物性研究”,國立高雄大學大學碩士論文 (2012).
[17] 張武中,“以溶膠凝膠法製備Bi(Fe,Mn)O3鐵電磁功能性陶瓷薄膜及其性質的研究”,東華大學碩士論文 (2006).
[18] M. E. Lines and A. M. Glass, “Principles and applications of ferroelectrics and related materials,” New York, Oxford University Press, 2001.
[19] S. Hoshino, T. Mitsui, F. Jona, and R. Pepinsky, “Dielectric and Thermal Study of Tri-Glycine Sulfate, and Tri-Glycine Fluoberyllate,” Phys. Rev, vol. 107,pp. 1255–1258, 1957.
[20] 鐘金鋒,“化學液相法製備BiFeO3氧化物薄膜”,清華大學碩士論文 (2006).
[21] B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo, “Lanthanum-substituted bismuth titanate for use in non-volatile memories,” Nature, vol. 401, pp. 682-684, 1999.
[22] C. Kittel, “Introduction to solid state physics,” 7th ed. New York, JohnWiley&Sons, 1996.
[23] B.E. Gnade, S.R. Summerfelt, and D. Crenshaw, “Processing and device issues of high permittivity materials for DRAMs,” Proc. of NATO Adv. Res. Work. on Science and Tech. of Electroceramic Thin Films, pp. 373-382, 1994
[24] 楊賜麟, “半導體物理與元件”,滄海, p344-p356,(2005).
[25] 吳郎, “電子陶瓷-介電”,全欣資訊圖書,(1994).
[26] J. Wu, J. Wang, D. Xiao, and J. Zhu, “Leakage mechanism of cation -modified BiFeO3 thin film,” AIP Advances 1, pp. 022138, 2011.
[27] 謝煜弘,“電子材料”,新文京,p206-p217,(2005).
[28] A.J. Moulson and J.M. Herbert, “Electroceramics, materials, properties and applications ,” West Sussex, John Wiley & Sons ltd, 1990.
[29] CHAN, N‐H, R. K. Sharma, and Donald M. Smyth. “Nonstoichiometry in acceptor‐doped BaTiO3,” Journal of the American Ceramic Society, no. 3, vol. 65, pp. 167-170, 1982.
[30] 李雅明, “固態電子學”,全華科技(1995)
[31] J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D.Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh “Epitaxal BiFeO3 multiferroic thin film heterostructures,” Science, vol. 299, pp. 1719, 2003.
[32] J. R. Teague, R .G. Erson, and W. J. James, “Dielectric hysteresis in single crystal BiFeO3,” Solid State Communications, vol. 8, pp. 103, 1970.
[33] Tadashi Takenaka and Koichiro Sakata, “Grain orientation and electrical properties of hot-forged Bi4Ti3O12 ceramic,” Jpn. J. Appl. Phys, vol. 19 pp. 31-39, 1980.
[34] 張文志, 利用射頻磁控系統製備 BiFeO3 複鐵式薄膜及相關物性研究.
[35] M. I. Morozov, N. A. Lomanova, and V. V. Gusarov, “Specific features of BiFeO3 formation in a mixture of bismuth(III)and iron(III) oxides,” Russian Journal of Gener Chemistry, vol. 73, pp. 1676-1680, 2003.
[36] V. V. Lazenka, G. Zhang, J. Vanacken, Makoed, A. F. Ravinski, and V. V. Moshchalkov, “Structural transformation and magnetoelectric behavior in Bi1−xGdxFeO3 multiferroics,” J. Phys. D: Applied Physics, vol. 45, pp. 125002, 2012.
[37] Gustau Catalan and James F. Scott, “Physics and Applications of Bismuth Ferrite,” Adv. Mater, vol. 21, pp. 2463–2485, 2009.
[38] J. R. Teague, R .G. Erson, and W. J. James, “Dielectric hysteresis in single crystal BiFeO3,” Solid State Communications, vol. 8, pp. 103, 1970.
[39] B. Ruette, S. Zvyagin, A. P. Pyatakov, A. Bush, J. F. Li, V. I. Belotelov, A. K. Zvezdin, and D. Viehland, “Magnetic-field-induced phase transition in BiFeO3 observed by high-field electron spin resonance: Cycloidal to homogeneous spin order,” Phys. Rev. B, vol. 69, pp. 064114, 2004.
[40] Chemistry the Chinese CHEM. SOC, TAIPEI September, vol. 63, no. 3, pp. 409-418, 2005.
[41] Z. M. Jarzebski, phys. Stat. sol, vol. 71, pp. 13, 1982.
[42] Pearse, R. W. B., Gaydon, A. G., Pearse, R. W. B, and Gaydon, A. G., “London: Chapman and Hall,” The identification of molecular spectra, vol. 297, pp. 293, 1976.
[43] 陳永志, 陳姿秀, “溶膠-凝膠法之應用與發展現況”, 工業材料,工業技術研究院,工業材料研究所,p.115, 2002.
[44] 工業技術研究院工業材料研究所 編印, “精密陶瓷個性及檢測分析”.
[45] M. L. Calzda, R. Sirela, F. Carmona, and B. Jimenez, J. Am. Ceram, “Invesigation of a diol-based sol-gel process for the preparation of lead titanate materials,” Journal of the American Ceramic Society, vol. 78, pp. 1802, 1995.
[46] B. Jirgensons and M. E. Straumanis, “Coloid Chemistry,” NEW YORK, MvMillian Co, 1962.
[47] 李健銘,“以溶膠-凝膠法製備鈮摻雜鈦酸鉍鐵電薄膜之特性研究”,修平科技大大學碩士論文 (2009).
[48] Priyadarshini Dash, B. N. Dash, Haripriya Rath, Chandana Rath, and N. C. Mishra, “Evolution of phase purity and texture on annealing of BiFeO3 thin film prepared by sol-gel technique,” Indian J. Phys, no. 4, vol. 83, pp. 485-491, 2009.
[49] T. Choi, S. Lee, Y. J. Choi, V. Kiryukhin and S.-W. Cheong, “Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3,” Science, vol. 63, pp. 324, 2009.
[50] M. Haberecht, H.-W Lernera, and M. Bolteb “The low-temperature phase of diisopropylammonium bromide,” Acta Cryst, vol. 58, pp. 0555-0557, 2002
[51] S. K. Pradhan , J. Das a, P. P. Rout a, S. K. Das a, D. K. Mishra , D. R. Sahu , A. K. Pradhan, V. V. Srinivasu, B.B. Nayak, and S.Verma, B.K.Roul, “Defect driven multiferroicity in Gd doped BiFeO3 at roomtemperature,” Journal of Magnetism and Magnetic Materials, vol.322, pp. 3614–3622, 2010 .


連結至畢業學校之論文網頁點我開啟連結
註: 此連結為研究生畢業學校所提供,不一定有電子全文可供下載,若連結有誤,請點選上方之〝勘誤回報〞功能,我們會盡快修正,謝謝!
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top