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研究生:王馨
研究生(外文):Hsin Wang
論文名稱:金在p型砷化鎵銦(001)-4×2表面的介面電子結構以及蕭基能障之研究
論文名稱(外文):金在p型砷化鎵銦(001)-4×2表面的介面電子結構以及蕭基能障之研究
指導教授:鄭秋平鄭秋平引用關係
指導教授(外文):Chiu-Ping Cheng
學位類別:碩士
校院名稱:國立嘉義大學
系所名稱:電子物理學系光電暨固態電子研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
畢業學年度:104
語文別:中文
論文頁數:74
中文關鍵詞:光電子能譜技術In0.53Ga0.47AsAu蕭基能障
外文關鍵詞:Photoelectron spectroscopyIn0.53Ga0.47AsAuSchottky barrier height
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  利用同步輻射光電子能譜(Synchrotron-radiation photoelectron spectroscopy)探討室溫下 Au 在 p-In0.53Ga0.47As(001)-4×2 上的介面電子結構。由價帶能譜(Valence-Band Spectroscopy)和核層能譜(Core-Level Spectroscopy)可得知,Au 蒸鍍在 InGaAs 上是以島狀方式沉積。蒸鍍厚度0.58 Å 前沾附於最表層的 As 之上並轉移負電荷給 As。蒸鍍厚度大於 1.17 Å 時,表面的 InAs 群組會以單獨的 In 和 As 形式斷鍵擴散至 Au 膜和 Au 產生鍵結。而表面的 GaAs 群組則以群組的形式一起脫離表面擴散至 Au 膜。在蒸鍍厚度達 6.71 Å 時,形成 Au 金屬膜。由介面能階圖可知,能階彎曲約為 0.27 eV,其介面蕭基能障(Schottky barrier height, SBH)約為 0.56 eV。
Using high-resolution synchrotron-radiation photoemission, we have studied the evolution of the interfacial electronic properties of gold (Au) atoms deposited on a clean p-In0.53Ga0.47As(001)-4×2 surface. The photoelectron spectra show that at the initial deposition gold atoms adsorb on the topmost As atoms, and transfer negative charge to the As. When the coverage is greater than 1.17 Å, the In and As atoms of InAs bonds at the surface seqregate and diffuse into Au film forming In-Au and As-Au bonds, respectively. As to the GaAs bonds at the surface, Au deposition results in GaAs group leaving the surface and diffusing to the Au film. The Fermi edge clearly emerges at approximately 6.71 Å of Au coverage. The band diagram directly derived from the corresponding photoelectron data shows that the band bending of 0.27 eV and the Schottky barrier height (SBH) of 0.56 eV are obtained.
摘  要 i
Abstract ii
目錄 iii
表目錄 v
圖目錄  vi
第一章 簡介 1
1-1研究動機 1
1-2 砷化鎵銦(InGaAs)介紹 5
第二章 實驗 10
2-1實驗原理 10
2-1.1 光電子能譜技術 10
2-1.2 價帶能譜(valence-band spectroscopy) 17
2-1.3 核層能譜(core-level spectroscopy) 22
2-2光源介紹 23
2-2.1 同步輻射光源(Synchrotron-radiation Light Source) 23
2-2. 2 光束線BL08A (LSGM) 26
2-3超高真空系統 30
2-4 實驗流程 32
2-4.1 樣品、蒸鍍材料準備 32
2-4.2 超高真空製備 33
2-4.3 膜厚校正 35
第三章 實驗結果與討論 38
3-1 價帶能譜 (Valence-Band Spectroscopy) 38
3-2 核層能譜 (Core-Level Spectroscopy) 46
3-2.1 As 3d和Ga 3d以及In 4d 核層能譜 46
3-2.2 As 3d 和 Ga 3d 以及 In 4d 擬合結果 51
3-2.3 Au 4f 核層能譜 59
3-3 蕭基能障 (Schottky Barrier Height,SBH) 61
第四章 結論 64
參考文獻  65

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